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Research Article | Open Access
Vertical Nanowire Array-Based Light Emitting Diodes
Peidong Yang1,2(
)
)Abstract
Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal–organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current–voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.
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Pages 123-128
Cite this article:
Lai E, Kim W, Yang P. Vertical Nanowire Array-Based Light Emitting Diodes. Nano Research, 2008, 1(2): 123-128. https://doi.org/10.1007/s12274-008-8017-4
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