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Research Article | Open Access
Theory and Practice of "Striping" for Improved ON/OFF Ratio in Carbon Nanonet Thin Film Transistors
John A. Rogers2,3,4,5,6(
), Muhammad A. Alam1()
), Muhammad A. Alam1()Abstract
A new technique to reduce the influence of metallic carbon nanotubes (CNTs)—relevant for large-scale integrated circuits based on CNT-nanonet transistors—is proposed and verified. Historically, electrical and chemical filtering of the metallic CNTs have been used to improve the ON/OFF ratio of CNT-nanonet transistors; however, the corresponding degradation in ON-current has made these techniques somewhat unsatisfactory. Here, we abandon the classical approaches in favor of a new approach based on relocation of asymmetric percolation threshold of CNT-nanonet transistors by a technique called "striping"; this allows fabrication of transistors with ON/OFF ratio > 1000 and ON-current degradation no more than a factor of 2. We offer first principle numerical models, experimental confirmation, and renormalization arguments to provide a broad theoretical and experimental foundation of the proposed method.
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Pages 167-175
Cite this article:
Pimparkar N, Cao Q, Rogers JA, et al. Theory and Practice of "Striping" for Improved ON/OFF Ratio in Carbon Nanonet Thin Film Transistors. Nano Research, 2009, 2(2): 167-175. https://doi.org/10.1007/s12274-009-9013-z
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