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Research Article | Open Access

Bending-Induced Conductance Increase in Individual emiconductor Nanowires and Nanobelts

Xiaobing Han1Guangyin Jing1Xinzheng Zhang1Renmin Ma1Xuefeng Song1Jun Xu1Zhimin Liao1Ning Wang2Dapeng Yu1( )
State Key Laboratory for Mesoscopic Physics, and Electron Microscopy LaboratoryDepartment of Physics, Peking UniversityBeijing100871China
Physics DepartmentHong Kong University of Science and TechnologyHong KongChina
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Abstract

Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Significant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.

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Nano Research
Pages 553-557
Cite this article:
Han X, Jing G, Zhang X, et al. Bending-Induced Conductance Increase in Individual emiconductor Nanowires and Nanobelts. Nano Research, 2009, 2(7): 553-557. https://doi.org/10.1007/s12274-009-9053-4

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Received: 09 March 2009
Revised: 15 April 2009
Accepted: 02 May 2009
Published: 01 July 2009
© Tsinghua University Press and Springer-Verlag 2009

This article is published with open access at Springerlink.com

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