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Research Article | Open Access

In Situ Etching for Total Control Over Axial and Radial Nanowire Growth

Magnus T. Borgström1(), Jesper Wallentin1, Johanna Trägårdh1,§, Peter Ramvall1, Martin Ek2, L. Reine Wallenberg2, Lars Samuelson1, Knut Deppert1
Solid State PhysicsLund UniversityBox 118S-221 00Lund, Sweden
Polymer & Materials Chemistry/nCHREMLund UniversityS-22100Lund, Sweden

§Present Address: H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom

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Abstract

We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.

Keywords

MOVPEnanowire growthin situ etchingphotoluminescence

References

1

De Franceschi, S.; van Dam, J. A.; Bakkers, E. P. A. M.; Feiner L. F.; Gurevich, L.; Kouwenhoven, L. P. Single-electron tunneling in InP nanowires. Appl. Phys. Lett. 2003, 83, 344–346.

Crossref Google Scholar
2

Bryllert, T.; Wernersson, L. E.; Fröberg, L. E.; Samuelson, L. Vertical high-mobility wrap-gated InAs nanowire transistor. IEEE Electron. Dev. Lett. 2006, 27, 323–325.

Crossref Google Scholar
3

Huang, Y.; Duan, X. F.; Cui, Y.; Lauhon, L. J.; Kim, K. H.; Lieber, C. M. Logic gates and computation from assembled nanowire building blocks. Science 2001, 294, 1313–1317.

Crossref Google Scholar
4

Zheng, G. F.; Patolsky, F.; Cui, Y.; Wang, W. U.; Lieber, C. M. Multiplexed electrical detection of cancer markers with nanowire sensor arrays. Nat. Biotechnol. 2005, 23, 1294–1301.

Crossref Google Scholar
5

Dick, K. A.; Deppert, K.; Larsson, M. W.; Martensson, T.; Seifert, W.; Wallenberg, L. R.; Samuelson, L. Synthesis of branched "nanotrees" by controlled seeding of multiple branching events. Nat. Mater. 2004, 3, 380–384.

Crossref Google Scholar
6

Bakkers, E. P. A. M.; Borgström, M. T.; Verheijen, M. A. Epitaxial growth of Ⅲ-Ⅴ nanowires on group IV substrates. MRS Bull. 2007, 32, 117–122.

Crossref Google Scholar
7

Regolin, I.; Sudfeld, D.; Luttjohann, S.; Khorenko, V.; Prost, W.; Kastner, J.; Dumpich, G.; Meier, C.; Lorke, A.; Tegude, F. J. Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs. J. Cryst. Growth 2007, 298, 607–611.

Crossref Google Scholar
8

Borgström, M.; Deppert, K.; Samuelson, L.; Seifert, W. Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: A growth study. J. Cryst. Growth 2004, 260, 18–22.

Crossref Google Scholar
9

Verheijen, M. A.; Immink, G.; deSmet, T.; Borgstrom, M. T.; Bakkers, E. P. A. M. Growth kinetics of heterostructured GaP–GaAs nanowires. J. Am. Chem. Soc. 2006, 128, 1353–1359.

Crossref Google Scholar
10

Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Kim, Y.; Zhang, X.; Guo, Y. N.; Zou, J. Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process. Nano. Lett. 2007, 7, 921–926.

Crossref Google Scholar
11

Lauhon, L. J.; Gudiksen, M. S.; Wang, C. L.; Lieber, C. M. Epitaxial core–shell and core–multishell nanowire heterostructures. Nature 2002, 420, 57–61.

Crossref Google Scholar
12

Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Kim, Y.; Fickenscher, M. A.; Perera, S.; Hoang, T. B.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J. M.; Zhang, X.; Zou, J. Unexpected benefits of rapid growth rate for Ⅲ-Ⅴ nanowires. Nano Lett. 2009, 9, 695–701.

Crossref Google Scholar
13

Suhara, M.; Nagao, C.; Honji, H.; Miyamoto, Y.; Furuya, K.; Takemura, R. Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes. J. Cryst. Growth 1997, 179, 18–25.

Crossref Google Scholar
14

Stringfellow, G. B. Organometallic Vapor Phase Epitaxy: Theory and Practice, 2nd edn; Academic Press: San Diego, 1999.

15

Chen, C. H.; Kitamura, M.; Cohen, R. M.; Stringfellow, G. B. Growth of ultrapure InP by atmospheric-pressure organometallic vapor-phase epitaxy. Appl. Phys. Lett. 1986, 49, 963–965.

Crossref Google Scholar
16

Hsu, C. C.; Yuan, J. S.; Cohen, R. M.; Stringfellow, G. B. Doping studies for InP grown by organometallic vapor-phase epitaxy. J. Cryst. Growth 1986, 74, 535–542.

Crossref Google Scholar
17

Dick, K. A.; Deppert, K.; Samuelson, L.; Seifert, W. InAs nanowires grown by MOVPE. J. Cryst. Growth 2007, 298, 631–634.

Crossref Google Scholar
18

Dayeh, S. A.; Yu, E. T.; Wang, D. Ⅲ-Ⅴ nanowire growth mechanism: Ⅴ/Ⅲ ratio and temperature effects. Nano Lett. 2007, 7, 2486–2490.

Crossref Google Scholar
19

Caneau, C.; Bhat, R.; Koza, M.; Hayes, J. R.; Esagui, R. Etching of InP by HCl in an OMVPE Reactor. J. Cryst. Growth 1991, 107, 203–208.

Crossref Google Scholar
20

Kitatani, T.; Tsuchiya, T.; Shinoda, K.; Aoki, M. In situ etching of InGaAsP/InP by using HCl in an MOVPE reactor. J. Cryst. Growth 2005, 274, 372–378.

Crossref Google Scholar
21

Magnusson, M. H.; Deppert, K.; Malm, J. O.; Bovin, J. O.; Samuelson, L. Size-selected gold nanoparticles by aerosol technology. Nanostruct. Mater. 1999, 12, 45–48.

Crossref Google Scholar
22

Tsujino, K.; Matsumura, M. Morphology of nanoholes formed in silicon by wet etching in solutions containing HF and H2O2 at different concentrations using silver nanoparticles as catalysts. Electrochim. Acta 2007, 53, 28–34.

Crossref Google Scholar
23

Algra, R.; Verheijen, M. A.; Borgström, M. T.; Feiner, L. F.; Immink, G.; van Enckevort, W. J. P.; Vlieg, E.; Bakkers, E. P. A. M. Twinning superlattices in indium phosphide nanowires. Nature 2008, 456, 369–372.

Crossref Google Scholar
24

Skromme, B. J.; Stillman, G. E.; Oberstar, J. D.; Chan, S. S. Photoluminescence identification of the C and Be acceptor levels in InP. J. Electron. Mater. 1984, 13, 463–491.

Crossref Google Scholar
25

Fry, K. L.; Kuo, C. P.; Larsen, C. A.; Cohen, R. M.; Stringfellow, G. B.; Melas, A. OMVPE Growth of InP and Ga0.47In0.53As using ethyldimethylindium. J. Electron. Mater. 1986, 15, 91–96.

Crossref Google Scholar
26

Pemasiri, K.; Montazeri, M.; Gass, R.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J.; Paiman, S.; Gao, Q.; Tan, H. H.; Jagadish, C.; Zhang, X.; Zou, J. Carrier dynamics and quantum confinement in type II ZB–WZ InP nanowire homostructures. Nano Lett. 2009, 9, 648–654.

Crossref Google Scholar
27

Bao, J. M.; Bell, D. C.; Capasso, F.; Wagner, J. B.; Martensson, T.; Tragardh, J.; Samuelson, L. Optical properties of rotationally twinned InP nanowire heterostructures. Nano Lett. 2008, 8, 836–841.

Crossref Google Scholar
28

Okamoto, H.; Massalski, T. B. The Au–C (gold-carbon) system. J. Phase Equil. 1984, 5, 378–379.

Crossref Google Scholar
29

Borgström, M. T.; Immink, G.; Ketelaars, B.; Algra, R.; Bakkers, E. P. A. M. Synergetic nanowire growth. Nat. Nanotechnol. 2007, 2, 541–544.

Crossref Google Scholar
Nano Research
Volume 3 Issue 4,
April 2010
Pages 264-270
DOI: 10.1007/s12274-010-1029-x
Cite this article:
Borgström MT, Wallentin J, Trägårdh J, et al. In Situ Etching for Total Control Over Axial and Radial Nanowire Growth. Nano Research, 2010, 3(4): 264-270. https://doi.org/10.1007/s12274-010-1029-x
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