AI Chat Paper
Discover the SciOpen Platform and Achieve Your Research Goals with Ease.
Search articles, authors, keywords, DOl and etc.
{{expandStatus?'Exit ':''}}Advanced Search
Semiconducting single-walled carbon nanotubes (s-SWNTs) with a purity of ~98% have been obtained by gel filtration of arc-discharge grown SWNTs with diameters in the range 1.2–1.6 nm. Multi-laser Raman spectroscopy confirmed the presence of less than 2% of metallic SWNTs (m-SWNTs) in the s-SWNT enriched sample. Measurement of ~50 individual tubes in Pd-contacted devices with channel length 200 nm showed on/off ratios of > 104, conductances of 1.38–5.8 μS, and mobilities in the range 40–150 cm2/(V·s). Short channel multi-tube devices with ~100 tubes showed lower on/off ratios due to residual m-SWNTs, although the on-current was greatly increased relative to the devices made from individual tubes.
Tans, S. J.; Verschueren, A. R. M.; Dekker, C. Room-temperature transistor based on a single carbon nanotube. Nature 1998, 393, 49–52.
Martel, R.; Schmidt, T.; Shea, H. R.; Hertel, T.; Avouris, P. Single- and multi-wall carbon nanotube field-effect transistors. Appl. Phys. Lett. 1998, 73, 2447–2449.
Zhou, C.; Kong, J.; Dai, H. Electrical measurements of individual semiconducting single-walled carbon nanotubes of various diameters. Appl. Phys. Lett. 2000, 76, 1597–1599.
Bachtold, A.; Hadley, P.; Nakanishi, T.; Dekker, C. Logic circuits with carbon nanotube transistors. Science 2001, 294, 1317–1320.
Appenzeller, J.; Knoch, J.; Derycke, V.; Martel, R.; Wind, S.; Avouris, P. Field-modulated carrier transport in carbon nanotube transistors. Phys. Rev. Lett. 2002, 89, 126801.
Javey, A.; Guo, J.; Wang, Q.; Lundstrom, M.; Dai, H. Ballistic carbon nanotube field-effect transistors. Nature 2003, 424, 654–657.
Dai, H.; Javey, A.; Pop, E.; Mann, D.; Kim, W.; Lu, Y. Electrical transport properties and field effect transistors of carbon nanotubes. Nano, 2006, 1, 1–13.
Zhang, L.; Zaric, S.; Tu, X.; Wang, X.; Zhao, W.; Dai, H. Assessment of chemically separated carbon nanotubes for nanoelectronics. J. Am. Chem. Soc. 2008, 130, 2686–2691.
Zhang, L.; Tu, X.; Welsher, K.; Wang, X.; Zheng, M.; Dai, H. Optical characterizations and electronic devices of nearly pure (10, 5) single-walled carbon nanotubes. J. Am. Chem. Soc. 2009, 131, 2454–2455.
Park, S.; Lee, H. W.; Wang, H.; Selvarasah, S.; Dokmeci, M. R.; Park, Y. J.; Cha, S. N.; Kim, J. M.; Bao, Z. Highly effective separation of semiconducting carbon nanotubes verified via short-channel devices fabricated using dip-pen nanolithography. ACS Nano 2012, 6, 2487–2496.
Ding, L.; Tselev, A.; Wang, J.; Yuan, D.; Chu, H.; McNicholas, T. P.; Li, Y.; Liu, J. Selective growth of well-aligned semiconducting single-walled carbon nanotubes. Nano Lett. 2009, 9, 800–805.
Zheng, M.; Jagota, A.; Semke, E. D.; Diner, B. A.; Mclean, R. S.; Lustig, S. R.; Richardson, R. E.; Tassi, N. G. DNA-assisted dispersion and separation of carbon nanotubes. Nat. Mater. 2003, 2, 338–342.
Arnold, M. S.; Stupp, S. I.; Hersam, M. C. Enrichment of single-walled carbon nanotubes by diameter in density gradients. Nano Lett. 2005, 5, 713–718.
Takeshi, T.; Jin, H.; Miyata, Y.; Kataura, H. High-yield separation of metallic and semiconducting single-wall carbon nanotubes by agarose gel electrophoresis. Appl. Phys. Express 2008, 1, 114001.
Hersam, M. C. Progress towards monodisperse single-walled carbon nanotubes. Nat. Nanotechnol. 2008, 3, 387–394.
Yang, C. M.; An, K. H.; Park, J. S.; Park, K. A.; Lim, S. C.; Cho, S. H., Lee, Y. S.; Park, W.; Park, C. Y., Lee, Y. L. Preferential etching of metallic single-walled carbon nanotubes with small diameter by fluorine gas. Phys. Rev. B 2006, 73, 075419.
Zhang, G.; Qi, P.; Wang, X.; Lu, Y.; Li, X.; Tu R.; Bansalruntip, S.; Mann, D.; Zhang, L.; Dai, H. Selective etching of metallic carbon nanotubes by gas-phase reaction. Science 2006, 314, 974–977.
Kang, S. J.; Kocabas, C.; Ozel, T.; Shim, M.; Pimparkar, N.; Alam, M. A.; Rotkin, S. V.; Rogers, J. A. High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes. Nat. Nanotechnol. 2007, 2, 230–236.
Gomez, L. M.; Kumar, A.; Zhang, Y.; Ryu, K.; Badmaev, A.; Zhou, C. Scalable light-induced metal to semiconductor conversion of carbon nanotubes. Nano Lett. 2009, 9, 3592–3598.
Kanungo, M.; Lu, H.; Malliaras, G. G.; Blanchet, G. B. Suppression of metallic conductivity of single-walled carbon nanotubes by cycloaddition reactions. Science 2009, 323, 234–237.
Moshammer, K.; Hennrich, F.; Kappes, M. M. Selective suspension in aqueous sodium dodecyl sulfate according to electronic structure type allows simple separation of metallic from semiconducting single-walled carbon nanotubes. Nano Res. 2009, 2, 599–606.
Liu, H.; Feng, Y.; Tanaka, T.; Urabe, Y.; Kataura, H. Diameter-selective metal/semiconductor separation of single-wall carbon nanotubes by agarose gel. J. Phys. Chem. C 2010, 114, 9270–9276.
Miyata, Y.; Shiozawa, K.; Asada, Y.; Ohno, Y.; Kitaura, R.; Mizutani, T.; Shinohara, H. Length-sorted semiconducting carbon nanotubes for high-mobility thin film transistors. Nano Res. 2011, 4, 963–970.
Krupke, R.; Hennrich, F.; L?hneysen, H. v.; Kappes, M. M. Separation of metallic from semiconducting single-walled carbon nanotubes. Science 2003, 301, 344–347.
Arnold, M. S.; Green, A. A.; Hulvat, J. F.; Stupp, S. I.; Hersam, M. C. Sorting carbon nanotubes by electronic structure using density differentiation. Nat. Nanotechnol. 2006, 1, 60–65.
Engel, M.; Small, J. P.; Steiner, M.; Freitag, M.; Green, A. A.; Hersam, M. C.; Avouris, P. Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays. ACS Nano 2008, 2, 2445–2452.
LeMieux, M. C.; Roberts, M.; Barman, S.; Jin, Y. W.; Kim, J. M.; Bao, Z. Self-sorted, aligned nanotube networks for thin-film transistors. Science 2008, 321, 101–104.
Ju, S.; Doll, J.; Sharma, I.; Papadimitrakopoulos, F. Selection of carbon nanotubes with specific chiralities using helical assemblies of flavin mononucleotide. Nat. Nanotechnol. 2008, 3, 356–362.
Lee, H. W.; Yoon, Y.; Park, S.; Oh, J. H.; Hong, S.; Liyanage, L. S.; Wang, H.; Morishita, S.; Patil, N.; Park, Y. J., et al. Selective dispersion of high purity semiconducting single-walled carbon nanotubes with regioregular poly(3-alkylthiophene)s. Nat. Commun. 2011, 2, 541.
Snow, E. S.; Novak, J. P.; Campbell, P. M.; Park, D. Random networks of carbon nanotubes as an electronic material. Appl. Phys. Lett. 2003, 82, 2145–2147.
Izard, N.; Kazaoui, S.; Hata, K.; Okazaki, T.; Saito, T.; Iijima, S.; Minami, N. Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors. Appl. Phys. Lett. 2008, 92, 243112.
Wang, C.; Zhang, J.; Ryu, K.; Badmaev, A.; De Arco, L. G.; Zhou, C. Wafer-scale fabrication of separated carbon nanotube thin-film transistors for display applications. Nano Lett. 2009, 9, 4285–4291.
Kim, W.; Javey, A.; Tu, R.; Cao, J.; Wang, Q.; Dai, H. Electrical contacts to carbon nanotubes down to 1 nm in diameter. Appl. Phys. Lett. 2005, 87, 173101–173103.
Richter, E.; Subbaswamy, K. R. Theory of size-dependent resonance Raman scattering from carbon nanotubes. Phys. Rev. Lett. 1997, 79, 2738–2741.
Kataura, H.; Kumazawa, Y.; Maniwa, Y.; Umezu, I.; Suzuki, S.; Ohtsuka, Y.; Achiba, Y. Optical properties of single-wall carbon nanotubes. Synth. Met. 1999, 103, 2555–2558.
Jorio, A.; Saito, R.; Hafner, J. H.; Lieber, C. M.; Hunter, M.; McClure, T.; Dresselhaus, G.; Dresselhaus, M. S. Structural (n, m) determination of isolated single-wall carbon nanotubes by resonant raman scattering. Phys. Rev. Lett. 2001, 86, 1118–1121.
Wang, X.; Ouyang, Y.; Li, X.; Wang, H.; Guo, J.; Dai, H. Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors. Phys. Rev. Lett. 2008, 100, 206803.
京公网安备11010802044758号