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The metrology of two-dimensional (2D) materials such as graphene, boron nitride or molybdenum disulfide grown by chemical vapor deposition (CVD) is critical for the optimization of their synthesis. We demonstrate the use of film-induced frustrated etching (FIFE) as a facile, scalable method to reveal and quantify structural defects in continuous thin sheets. The sensitivity of the analysis technique to intentionally induced lattice defects in graphene compares favorably to the sensitivity of Raman spectroscopy. A strong correlation between the measured defectiveness and the maximum carrier mobility in graphene emphasizes the importance of the technique for growth optimization. Due to its ease and widespread availability, we anticipate that FIFE will find wide application in the characterization of CVD-synthesized 2D materials.
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