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Research Article

Anomalous Anisotropic Magnetoresistance in Topological Insulator Films

Jian Wang1,2(), Handong Li3,4, Cuizu Chang5,6, Ke He5, Joon Sue Lee2, Haizhou Lu3, Yi Sun1, Xucun Ma5, Nitin Samarth2, Shunqing Shen3, Qikun Xue5,6, Maohai Xie3, Moses H. W. Chan2()
International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
The Center for Nanoscale Science and Department of PhysicsThe Pennsylvania State University, University ParkPennsylvania16802-6300USA
Physics DepartmentThe University of Hong Kong, Pokfulam RoadHong KongChina
State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of China, ChengduSichuan610054China
Institute of PhysicsChinese Academy of SciencesBeijing100190China
Department of PhysicsTsinghua UniversityBeijing100084China
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Abstract

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurements, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films. Interestingly, measurements under an in-plane magnetic field, along and perpendicular to the bias current show anomalous opposite magnetoresistance.

Keywords

Topological insulatorBi2Se3 filmtransport propertymagnetoresistancelow temperature

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Nano Research
Volume 5 Issue 10,
October 2012
Pages 739-746
DOI: 10.1007/s12274-012-0260-z
Cite this article:
Wang J, Li H, Chang C, et al. Anomalous Anisotropic Magnetoresistance in Topological Insulator Films. Nano Research, 2012, 5(10): 739-746. https://doi.org/10.1007/s12274-012-0260-z
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