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Research Article

Strain-Induced D Band Observed in Carbon Nanotubes

Chia-Chi Chang1, Chun-Chung Chen2, Wei-Hsuan Hung3, I-Kai Hsu4, Marcos A. Pimenta5, Stephen B. Cronin1,2( )
Department of PhysicsUniversity of Southern CaliforniaLos AngelesCA90089USA
Department of Electrical EngineeringUniversity of Southern CaliforniaLos AngelesCA90089USA
Department of Materials Science and EngineeringFeng Chia University
Department of Materials ScienceUniversity of Southern CaliforniaLos AngelesCA90089USA
Departamento de FísicaUniversidade Federal de Minas GeraisBelo Horizonte, MG, 30123-970Brazil
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Graphical Abstract

Abstract

We report the emergence of the D band Raman mode in single-walled carbon nanotubes under large axial strain. The D to G mode Raman intensity ratio (ID/IG) is observed to increase with strain quadratically by more than a factor of 100-fold. Up to 5% strain, all changes in the Raman spectra are reversible. The emergence of the D band, instead, arises from the reversible and elastic symmetry-lowering of the sp2 bonds structure. Beyond 5%, we observe irreversible changes in the Raman spectra due to slippage of the nanotube from the underlying substrate, however, the D band intensity resumes its original pre-strain intensity, indicating that no permanent defects are formed.

Keywords

defectsstrainRamanSWCNTsD bandsp2 bond

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Nano Research
Volume 5 Issue 12,
December 2012
Pages 854-862
DOI: 10.1007/s12274-012-0269-3
Cite this article:
Chang C-C, Chen C-C, Hung W-H, et al. Strain-Induced D Band Observed in Carbon Nanotubes. Nano Research, 2012, 5(12): 854-862. https://doi.org/10.1007/s12274-012-0269-3

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Received: 27 August 2012
Revised: 02 October 2012
Accepted: 11 October 2012
Published: 10 November 2012
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2012
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