Graphical Abstract
![](https://wqketang.oss-cn-beijing.aliyuncs.com/zip-unzip/zip-98b48468-bda6-476d-be97-849fac6a3fc3/nr-5-12-896/files/nr-5-12-896-FE1.jpg?Expires=1725756426&OSSAccessKeyId=STS.NT5eViCkqzTYdbfdqxMkjpyyq&Signature=107ruKcqRE4%2FffSRmnAzrYuMuow%3D&security-token=CAISywJ1q6Ft5B2yfSjIr5eALuzdrrRQzZayZkTXgHEtQeRGn7zSkzz2IHtKenhsBOsbtfk1mG5W5%2FgZlqJ9SptIAEfJa9d99MzUP%2FpFltCT1fau5Jko1beHewHKeTOZsebWZ%2BLmNqC%2FHt6md1HDkAJq3LL%2Bbk%2FMdle5MJqP%2B%2FUFB5ZtKWveVzddA8pMLQZPsdITMWCrVcygKRn3mGHdfiEK00he8TouufTinpHMskGA1Aell7Mvyt6vcsT%2BXa5FJ4xiVtq55utye5fa3TRYgxowr%2Fwo0v0YpGya5YzHXwcPskvdKZbo78UqLQlla6w%2BGqFJqvPxr%2Fp8t%2Fx5fWJKAezhVgs8cVM8JOjIqKOscIsiJsO71SmqFV55c8Fdm%2BgUooJVgIMhTnduUfAPJAGOxzJitP%2BUVGGphr60TEnBL4rB5MUctfzRp75SXVPUTzDnGoABjuNLcf76FQN6p3t%2BSlCg%2FxR5C72RIk78k%2BUi44L9ZBmFT6F8GV7aXA52D1Ps56knKF6PAnhRivwyTxgsolycBfvccb3t5jGJ24SgY0aYosAECutxAo7sJhSwlwZvGwGDZJsop1vGiZ8eN1MbtZeRRuMeaZ2I%2BQo%2BnVP6Cf%2F0pDsgAA%3D%3D)
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Large-area patterned boron carbide nanowires (B4C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B4C NWs is about 50 nm, with a mean length of 20 μm. The B4C NWs have a single-crystal structure and conductivities around 5.1 × 10-2 Ω-1·cm-1. Field emission measurements of patterned B4C NWs films show that their turn-on electric field is 2.7 V/μm, lower than that of continuous B4C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B4C NWs are a promising candidate for flexible cold cathode materials.
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