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Fabrication of large area hexagonal boron nitride thin films for bendable capacitors
Jinquan Wei1(
),
), Abstract
Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride (h-BN) can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of ~9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 μF/cm2, which is one order of magnitude higher than the calculated value.
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Pages 602-610
Cite this article:
Guo N, Wei J, Jia Y, et al. Fabrication of large area hexagonal boron nitride thin films for bendable capacitors. Nano Research, 2013, 6(8): 602-610. https://doi.org/10.1007/s12274-013-0336-4
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