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Research Article

Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap

Pingan Hu1( ), Jia Zhang1, Mina Yoon2, Xiao-Fen Qiao3, Xin Zhang3, Wei Feng1, Pingheng Tan3( ), Wei Zheng1, Jingjing Liu1, Xiaona Wang1, Juan C. Idrobo2, David B. Geohegan2, Kai Xiao2( )
Key Lab of Microsystem and MicrostructureHarbin Institute of TechnologyMinistry of Education, No. 2 Yikuang StreetHarbin150080China
Center for Nanophase Materials SciencesOak Ridge National Laboratory, One Bethel Valley Road, Oak RidgeTN37831USA
State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing100083China
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Abstract

Highly sensitive phototransistors based on two-dimensional (2D) GaTe nanosheet have been demonstrated. The performance (photoresponsivity, detectivity) of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW-1. The detectivity of 2D GaTe devices is ~1012 Jones, which surpasses that of currently-exploited InGaAs photodetectors (1011-1012 Jones). To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.

Keywords

photodetectorgallium telluridetwo-dimensionalsemiconductornanosheet

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Nano Research
Volume 7 Issue 5,
May 2014
Pages 694-703
DOI: 10.1007/s12274-014-0430-2
Cite this article:
Hu P, Zhang J, Yoon M, et al. Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap. Nano Research, 2014, 7(5): 694-703. https://doi.org/10.1007/s12274-014-0430-2

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Received: 04 January 2014
Revised: 15 February 2014
Accepted: 17 February 2014
Published: 23 April 2014
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014
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