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A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85 ℃ under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.
Li, Y.; Qian, F.; Xiang, J.; Lieber, C. Nanowire electronic and optoelectronic devices. Mater. Today 2006, 9, 18–27.
Wang, N.; Cai, Y.; Zhang, R. Growth of nanowires. Mater. Sci. Eng. R 2008, 60, 1–51.
Adachi, M.; Anantram, M.; Karim, K. S. Core–shell silicon nanowire solar cells. Sci. Rep. 2013, 3, 1546.
Liu, N.; Yao, Y.; Cha, J.; McDowell, M.; Han, Y.; Cui, Y. Functionalization of silicon nanowire surfaces with metal-organic frameworks. Nano Res. 2012, 5, 109–116.
Holmes, J.; Johnston. K.; Doty, C.; Korgel, B. Control of thickness and orientation of solution-grown silicon nanowires. Science 2000, 287, 1471–1473.
Laocharoensuk, R.; Palaniappan, K.; Smith, N.; Dickerson, R.; Werder, D.; Baldwin, J.; Hollingsworth, A. Flow-based solution–liquid–solid nanowire synthesis. Nat. Nanotechnol. 2013, 8, 660–666.
Morral, A.; Arbiol, J.; Prades, J.; Cirera, A.; Morante, J. Synthesis of silicon nanowires with wurtzite crystalline structure by using standard chemical vapor deposition. Adv. Mater. 2007, 19, 1347–1351.
Trentler, T.; Hickman, K.; Goel, S.; Viano, A.; Gibbons, P.; Buhro, W. Solution–liquid–solid growth of crystalline Ⅲ-Ⅴ semiconductors: An analogy to vapor–liquid–solid growth. Science 1995, 270, 1791–1794.
Jennings, H.; Richman, M. A hexagonal (wurtzite) form of silicon. Science 1976, 193, 1242–1243.
Kagimura, R.; Nunes, R.; Chacham, H. Structures of Si and Ge nanowires in the subnanometer range. Phys. Rev. Lett. 2005, 95, 115502.
Li, F.; Nellist, P.; Lang, C.; Cockayne, D. Imaging and analysis of axial heterostructured silicon nanowires. J. Phys. : Conf. Ser. 2010, 241, 012088.
Xiang, C.; Yang, Y.; Penner, R. Cheating the diffraction limit: Electrodeposited nanowires patterned by photolithography. Chem. Commun. 2009, 859–873.
Lopez, F.; Givan, U.; Connell, J.; Lauhon, L. Silicon nanowire polytypes: Identification by Raman spectroscopy, generation mechanism, and misfit strain in homostructures. ACS Nano 2011, 11, 8958–8966.
Gogotsi, Y.; Baek, C.; Kirscht, F. Raman microspectroscopy study of processing-induced phase transformations and residual stress in silicon. Semicond. Sci. Technol. 1999, 14, 936–944.
Vasiliu, M.; Li, S.; Peterson, K.; Feller, D.; Gole, J.; Dixon, D. Structures and heats of formation of simple alkali metal compounds: Hydrides, chlorides, fluorides, hydroxides, and oxides for Li, Na, and K. J. Phys. Chem. A 2010, 114, 4272–4281.
