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Research Article

High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication

Mark Triplett1,2, Hideki Nishimura4, Matthew Ombaba1, V. J. Logeeswarren1, Matthew Yee1, Kazim G. Polat1, Jin Y. Oh1, Takashi Fuyuki4, François Léonard3, M. Saif Islam1( )
Center for Nano and Micro ManufacturingDepartment of Electrical and Computer EngineeringUniversity of CaliforniaDavisCA95616USA
Department of PhysicsUniversity of CaliforniaDavisCA95616USA
Sandia National LaboratoriesLivermoreCA94551USA
Microelectronic Device Science LaboratoryNara Institute of Science and TechnologyJapan
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Graphical Abstract

Abstract

Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes to assemble and incorporate the crystalline materials onto flexible substrates. Here we present a high-precision transfer-printing method for vertical arrays of single crystalline semiconductor materials with widely varying aspect ratios and densities enabling the assembly of arrays on flexible substrates in a vertical fashion. Complementary fabrication processes for integrating transferred arrays into flexible devices are also presented and characterized. Robust contacts to transferred silicon wire arrays are demonstrated and shown to be stable under flexing stress down to bending radii of 20 mm. The fabricated devices exhibit a reversible tactile response enabling silicon based, nonpiezoelectric, and flexible tactile sensors. The presented system leads the way towards high-throughput, manufacturable, and scalable fabrication of flexible devices.

Keywords

transfer printingnanowiresflexible electronicsprintable electronicsnanoscale devices

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References

1

McAlpine, M. C.; Ahmad, H.; Wang, D. W.; Heath, J. R. Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors. Nat. Mater. 2007, 6, 379–384.
Crossref Google Scholar
2

Fan, Z. Y.; Ho, J. C.; Takahashi, T.; Yerushalmi, R.; Takei, K.; Ford, A. C.; Chueh, Y. L.; Javey, A. Toward the development of printable nanowire electronics and sensors. Adv. Mater. 2009, 21, 3730–3743.
Crossref Google Scholar
3

Reuss, R. H.; Chalamala, B. R.; Moussessian, A.; Kane, M. G.; Kumar, A.; Zhang, D. C.; Rogers, J. A.; Hatalis, M.; Temple, D.; Moddel, G.; et al. Macroelectronics: Perspectives on technology and applications. Proc. IEEE. 2005, 93, 1239–1256.
Crossref Google Scholar
4

Hoffmann, S.; Utke, I.; Moser, B.; Michler, J.; Christiansen, S. H.; Schmidt, V.; Senz, S.; Werner, P.; Gosele, U.; Ballif, C. Measurement of the bending strength of vapor–liquid–solid grown silicon nanowires. Nano. Lett. 2006, 6, 622–625.
Crossref Google Scholar
5

Maiolo, J. R.; Kayes, B. M.; Filler, M. A.; Putnam, M. C.; Kelzenberg, M. D.; Atwater, H. A.; Lewis, N. S. High aspect ratio silicon wire array photoelectrochemical cells. J. Am. Chem. Soc. 2007, 129, 12346–12347.
Crossref Google Scholar
6

Wang, X.; Peng, K. Q.; Pan, X. J.; Chen, X.; Yang, Y.; Li, L.; Meng, X. M.; Zhang, W. J.; Lee, S. T. High-performance silicon nanowire array photoelectrochemical solar cells through surface passivation and modification. Angew. Chem. Int. Ed. 2011, 50, 9861–9865.
Crossref Google Scholar
7

Santori, E. A.; Maiolo, J. R.; Bierman, M. J.; Strandwitz, N. C.; Kelzenberg, M. D.; Brunschwig, B. S.; Atwater, H. A.; Lewis, N. S. Photoanodic behavior of vapor–liquid–solid-grown, lightly doped, crystalline Si microwire arrays. Energ. Environ. Sci. 2012, 5, 6867–6871.
Crossref Google Scholar
8

Oh, I.; Kye, J.; Hwang, S. Enhanced photoelectrochemical hydrogen production from silicon nanowire array photocathode. Nano Lett. 2012, 12, 298–302.
Crossref Google Scholar
9

Hochbaum, A. I.; Chen, R. K.; Delgado, R. D.; Liang, W. J.; Garnett, E. C.; Najarian, M.; Majumdar, A.; Yang, P. D. Enhanced thermoelectric performance of rough silicon nanowires. Nature 2008, 451, 163–167.
Crossref Google Scholar
10

Boukai, A. I.; Bunimovich, Y.; Tahir-Kheli, J.; Yu, J. K.; Goddard, W. A.; Heath, J. R. Silicon nanowires as efficient thermoelectric materials. Nature 2008, 451, 168–171.
Crossref Google Scholar
11

Fan, Z. Y.; Ho, J. C.; Jacobson, Z. A.; Yerushalmi, R.; Alley, R. L.; Razavi, H.; Javey, A. Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing. Nano Lett. 2008, 8, 20–25.
Crossref Google Scholar
12

Whang, D.; Jin, S.; Wu, Y.; Lieber, C. M. Large-scale hierarchical organization of nanowire arrays for integrated nanosystems. Nano Lett. 2003, 3, 1255–1259.
Crossref Google Scholar
13

Heo, K.; Cho, E.; Yang, J. E.; Kim, M. H.; Lee, M.; Lee, B. Y.; Kwon, S. G.; Lee, M. S.; Jo, M. H.; Choi, H. J.; et al. Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities. Nano Lett. 2008, 8, 4523–4527.
Crossref Google Scholar
14

Meitl, M. A.; Zhu, Z. T.; Kumar, V.; Lee, K. J.; Feng, X.; Huang, Y. Y.; Adesida, I.; Nuzzo, R. G.; Rogers, J. A. Transfer printing by kinetic control of adhesion to an elastomeric stamp. Nat. Mater. 2006, 5, 33–38.
Crossref Google Scholar
15

Sun, Y. G.; Rogers, J. A. Fabricating semiconductor nano/microwires and transfer printing ordered arrays of them onto plastic substrates. Nano Lett. 2004, 4, 1953–1959.
Crossref Google Scholar
16

Baca, A. J.; Ahn, J. H.; Sun, Y. G.; Meitl, M. A.; Menard, E.; Kim, H. S.; Choi, W. M.; Kim, D. H.; Huang, Y.; Rogers, J. A. Semiconductor wires and ribbons for high-performance flexible electronics. Angew. Chem. Int. Ed. 2008, 47, 5524–5542.
Crossref Google Scholar
17

Duan, X. F.; Niu, C. M.; Sahi, V.; Chen, J.; Parce, J. W.; Empedocles, S.; Goldman, J. L. High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Nature 2003, 425, 274–278.
Crossref Google Scholar
18

Goldberger, J.; Hochbaum, A. I.; Fan, R.; Yang, P. D. Silicon vertically integrated nanowire field effect transistors. Nano Lett. 2006, 6, 973–977.
Crossref Google Scholar
19

Plass, K. E.; Filler, M. A.; Spurgeon, J. M.; Kayes, B. M.; Maldonado, S.; Brunschwig, B. S.; Atwater, H. A.; Lewis, N. S. Flexible polymer-embedded Si wire arrays. Adv. Mater. 2009, 21, 325–328.
Crossref Google Scholar
20

Weisse, J. M.; Kim, D. R.; Lee, C. H.; Zheng, X. L. Vertical transfer of uniform silicon nanowire arrays via crack formation. Nano Lett. 2011, 11, 1300–1305.
Crossref Google Scholar
21

Shiu, S. C.; Hung, S. C.; Chao, J. J.; Lin, C. F. Massive transfer of vertically aligned Si nanowire array onto alien substrates and their characteristics. Appl. Surf. Sci. 2009, 255, 8566–8570.
Crossref Google Scholar
22

Logeeswaran, V. J.; Katzenmeyer, A. M.; Islam, M. S. Harvesting and transferring vertical pillar arrays of single-crystal semiconductor devices to arbitrary substrates. IEEE Trans. Electron. Dev. 2010, 57, 1856–1864.
Crossref Google Scholar
23

Logeeswaran, V. J.; Oh, J.; Nayak, A. P.; Katzenmeyer, A. M.; Gilchrist, K. H.; Grego, S.; Kobayashi, N. P.; Wang, S. Y.; Talin, A. A.; Dhar, N. K.; et al. A perspective on nanowire photodetectors: Current status, future challenges, and opportunities. IEEE J. Sel. Top. Quant. 2011, 17, 1002–1032.
Crossref Google Scholar
24

Sperling, L. H. Introduction to Physical Polymer Science; Wiley: Hoboken, NJ, USA, 2006.
Crossref
25
Johnson, G. C.; Jones, P. T.; Wu, C. Y.; Honda, T. Determining the strength of brittle thin films for MEMS. In Mechanical Properties of Structural Films; ASTM International: West Conshohocken, PA, USA, 2001.
26

Sze, S. M.; Ng, K. K. Physics of Semiconductor Devices; John Wiley & Sons, Inc., 2007.
27
Zeghbroeck, B. V. Principles of Semiconductor Devices; Arailable at ecee. colorado. edu/~bart/book/(accessed December 10, 2013).https://doi.org/10.1533/9780857096326.10
Crossref
28

Han, S. T.; Zhou, Y.; Roy, V. A. Towards the development of flexible non-volatile memories. Adv. Mater. 2013, 25, 5425–5449.
Crossref Google Scholar
29

Wu, W.; Wen, X.; Wang, Z. L. Taxel-addressable matrix of vertical-nanowire piezotronic transistors for active/adaptive tactile imaging. Science 2013, 340, 952–957.
Crossref Google Scholar
30

He, R. R.; Yang, P. D. Giant piezoresistance effect in silicon nanowires. Nat. Nanotechnol. 2006, 1, 42–46.
Crossref Google Scholar
31

Callister, W. D. Materials Science and Engineering; Wiley: Hoboken, NJ, USA, 2007.
Nano Research
Volume 7 Issue 7,
July 2014
Pages 998-1006
DOI: 10.1007/s12274-014-0462-7
Cite this article:
Triplett M, Nishimura H, Ombaba M, et al. High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication. Nano Research, 2014, 7(7): 998-1006. https://doi.org/10.1007/s12274-014-0462-7

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Received: 14 February 2014
Revised: 25 March 2014
Accepted: 27 March 2014
Published: 04 June 2014
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014
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