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Research Article

Threshold voltage tuning and printed complementary transistors and inverters based on thin films of carbon nanotubes and indium zinc oxide

Pattaramon Vuttipittayamongkol1,†,§, Fanqi Wu2,§, Haitian Chen1, Xuan Cao2, Bilu Liu1, Chongwu Zhou1,2( )
Ming Hsieh Department of Electrical EngineeringUniversity of Southern CaliforniaLos Angeles, CA90089USA
Mork Family Department of Chemical Engineering and Materials ScienceUniversity of Southern CaliforniaLos Angeles, CA90089USA

† Present address: School of Information Technology, Mae Fah Luang University, Chiang Rai 57100, Thailand

§ These authors contributed equally to this work.

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Graphical Abstract

Abstract

Carbon nanotubes (CNTs) have emerged as an important material for printed macroelectronics. However, achieving printed complementary macroelectronics solely based on CNTs is difficult because it is still challenging to make reliable n-type CNT transistors. In this study, we report threshold voltage (Vth) tuning and printing of complementary transistors and inverters composed of thin films of CNTs and indium zinc oxide (IZO) as p-type and n-type transistors, respectively. We have optimized the Vth of p-type transistors by comparing Ti/Au and Ti/Pd as source/drain electrodes, and observed that CNT transistors with Ti/Au electrodes exhibited enhancement mode operation (Vth < 0). In addition, the optimized In: Zn ratio offers good n-type transistors with high on-state current (Ion) and enhancement mode operation (Vth > 0). For example, an In: Zn ratio of 2:1 yielded an enhancement mode n-type transistor with Vth ~ 1 V and Ion of 5.2 μA. Furthermore, by printing a CNT thin film and an IZO thin film on the same substrate, we have fabricated a complementary inverter with an output swing of 99.6% of the supply voltage and a voltage gain of 16.9. This work shows the promise of the hybrid integration of p-type CNT and n-type IZO for complementary transistors and circuits.

Keywords

carbon nanotubeindium zinc oxidethin film transistorcomplementary inverterinkjet printingthreshold voltage tuning

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Nano Research
Volume 8 Issue 4,
April 2015
Pages 1159-1168
DOI: 10.1007/s12274-014-0596-7
Cite this article:
Vuttipittayamongkol P, Wu F, Chen H, et al. Threshold voltage tuning and printed complementary transistors and inverters based on thin films of carbon nanotubes and indium zinc oxide. Nano Research, 2015, 8(4): 1159-1168. https://doi.org/10.1007/s12274-014-0596-7

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Received: 16 July 2014
Revised: 23 September 2014
Accepted: 26 September 2014
Published: 06 November 2014
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014
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