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ZnGa2O4 nanowires (NWs) as a ternary oxide semiconductor were successfully synthesized by a simple vapor transport method for application as highperformance ultraviolet (UV) photodetectors. A single-nanowire UV photodetector fabricated on a rigid silicon substrate exhibited excellent spectral responsivity (3, 174 A/W) and high external quantum efficiency (1.1 × 106%) at 350 nm UV light illumination. A flexible single-nanowire photodetector on a polyethylene terephthalate (PET) substrate was also fabricated and showed similar properties. The as-fabricated flexible photodetector exhibited stable electrical properties and mechanical flexibility under different bending curvatures over many cycles, indicating its potential application in future flexible photoelectronic devices.
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