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Research Article

Raman microscopy mapping for the purity assessment of chirality enriched carbon nanotube networks in thin-film transistors

Zhao Li( ), Jianfu Ding, Paul Finnie, Jacques Lefebvre, Fuyong Cheng, Christopher T. Kingston, Patrick R. L. Malenfant( )
Security and Disruptive Technologies PortfolioNational Research Council Canada, 1200 Montreal Road, Ottawa, Ontario, K1A 0R6Canada
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Abstract

With recent improvements in carbon nanotube separation methods, the accurate determination of residual metallic carbon nanotubes in a purified nanotube sample is important, particularly for those interested in using semiconducting single-walled carbon nanotubes (SWCNTs) in electronic device applications such as thin-film transistors (TFTs). This work demonstrates that Raman microscopy mapping is a powerful characterization tool for quantifying residual metallic carbon nanotubes present in highly enriched semiconducting nanotube networks. Raman mapping correlates well with absorption spectroscopy, yet it provides greater differentiation in purity. Electrical data from TFTs with channel lengths of 2.5 and 5 μm demonstrate the utility of the method. By comparing samples with nominal purities of 99.0% and 99.8%, a clear differentiation can be made when evaluating the current on/off ratio as a function of channel length, and thus the Raman mapping method provides a means to guide device fabrication by correlating SWCNT network density and purity with TFT channel scaling.

Keywords

Raman spectroscopycarbon nanotubesthin film transistorsmicroscopy mappingpurity assessment

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Nano Research
Volume 8 Issue 7,
July 2015
Pages 2179-2187
DOI: 10.1007/s12274-015-0725-y
Cite this article:
Li Z, Ding J, Finnie P, et al. Raman microscopy mapping for the purity assessment of chirality enriched carbon nanotube networks in thin-film transistors. Nano Research, 2015, 8(7): 2179-2187. https://doi.org/10.1007/s12274-015-0725-y

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Received: 18 September 2014
Revised: 08 January 2015
Accepted: 13 January 2015
Published: 07 May 2015
© Tsinghua University Press and Springer‐Verlag Berlin Heidelberg 2015
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