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Research Article

Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly sensitive electrical detection of DNA hybridization

Doo-Won Lee1,§, Jinhwan Lee2,§, Il Yung Sohn1, Bo-Yeong Kim3, Young Min Son4, Hunyoung Bark3, Jaehyuck Jung3, Minseok Choi5, Tae Hyeong Kim5, Changgu Lee2,3( ), Nae-Eung Lee1,3,4( )
Department of Advanced Materials Science & EngineeringSungkyunkwan University, Suwon, Gyunggi-do, 440-746Republic of Korea
Department of Mechanical EngineeringSungkyunkwan University, Suwon, Gyunggi-do, 440-746Republic of Korea
SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University, Suwon, Gyunggi-do, 440-746Republic of Korea
Samsung Advanced Institute for Health Sciences & Technology (SAIHST)Sungkyunkwan University, Suwon, Gyeonggi-do, 440-746Republic of Korea
New Materials TeamFuture Device R & D DepartmentLG Electronics Advanced Research InstituteSeoul, 137-724Republic of Korea

§ These authors contributed equally to this work.

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Abstract

A field-effect transistor (FET) with two-dimensional (2D) few-layer MoS2 as a sensing-channel material was investigated for label-free electrical detection of the hybridization of deoxyribonucleic acid (DNA) molecules. The high-quality MoS2-channel pattern was selectively formedthrough the chemical reaction of the Mo layer with H2S gas. The MoS2 FET was very stable in an electrolyte and inert to pH changes due to the lack of oxygen-containing functionalities on the MoS2 surface. Hybridization of single-stranded target DNA molecules with single-stranded probe DNA molecules physically adsorbed on the MoS2 channel resulted in a shift of the threshold voltage (Vth) in the negative direction and an increase in the drain current. The negative shift in Vth is attributed to electrostatic gating effects induced by the detachment of negatively charged probe DNA molecules from the channel surface after hybridization. A detection limit of 10 fM, high sensitivity of 17 mV/dec, and high dynamic range of 106 were achieved. The results showed that a bio-FET with an ultrathin 2D MoS2 channel can be used to detect very small concentrations of target DNA molecules specifically hybridized with the probe DNA molecules.

Keywords

two-dimensional(2D) materialsMoS2field-effect transistorbiosensordeoxyribonucleic acid (DNA) hybridization

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Nano Research
Volume 8 Issue 7,
July 2015
Pages 2340-2350
DOI: 10.1007/s12274-015-0744-8
Cite this article:
Lee D-W, Lee J, Sohn IY, et al. Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly sensitive electrical detection of DNA hybridization. Nano Research, 2015, 8(7): 2340-2350. https://doi.org/10.1007/s12274-015-0744-8

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Received: 16 December 2014
Revised: 03 February 2015
Accepted: 10 February 2015
Published: 09 May 2015
© Tsinghua University Press and Springer‐Verlag Berlin Heidelberg 2015
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