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Research Article

Stable high-performance hybrid perovskite solar cells with ultrathin polythiophene as hole-transporting layer

Weibo Yan1Yunlong Li1Yu Li2Senyun Ye1Zhiwei Liu1Shufeng Wang2( )Zuqiang Bian1( )Chunhui Huang1
State Key Laboratory of Rare Earth Materials Chemistry and ApplicationsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
State Key Laboratory for Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871China
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Abstract

Ultrathin polythiophene films prepared via electrochemical polymerization is successfully used as the hole-transporting material, substituting conventional HTM-PEDOT: PSS, in planar p-i-n CH3NH3PbI3 perovskite-based solar cells, affording a series of ITO/polythiophene/CH3NH3PbI3/C60/BCP/Ag devices. The ultrathin polythiophene film possesses good transmittance, high conductivity, a smooth surface, high wettability, compatibility with PbI2 DMF solution, and an energy level matching that of the CH3NH3PbI3 perovskite material. A promising power conversion efficiency of about 15.4%, featuring a high fill factor of 0.774, open voltage of 0.99 V, and short-circuit current density of 20.3 mA·cm-2 is obtained. The overall performance of the devices is superior to that of cells using PEDOT: PSS. The differences of solar cells with different hole-transfer materials in charge recombination, charge transport and transfer, and device stability are further investigated and demonstrate that polythiophene is a more effective and promising hole-transporting material. This work provides a simple, prompt, controllable, and economic approach for the preparation of an effective hole-transporting material, which undoubtedly offers an alternative method in the future industrial production of perovskite solar cells.

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Nano Research
Pages 2474-2480
Cite this article:
Yan W, Li Y, Li Y, et al. Stable high-performance hybrid perovskite solar cells with ultrathin polythiophene as hole-transporting layer. Nano Research, 2015, 8(8): 2474-2480. https://doi.org/10.1007/s12274-015-0755-5

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Received: 16 January 2015
Revised: 16 February 2015
Accepted: 17 February 2015
Published: 29 August 2015
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015
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