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Research Article

Strain-induced spatially indirect exciton recombination in zinc-blende/wurtzite CdS heterostructures

Dehui Li1,†, Yang Liu1, Maria de la Mata2, Cesar Magen3, Jordi Arbiol2,4,5, Yuanping Feng6, Qihua Xiong1,7()
Division of Physics and Applied PhysicsSchool of Physical and Mathematical Sciences, Nanyang Technological UniversitySingapore637371Singapore
Institut de Ciencia de Materials de BarcelonaICMAB-CSICCampus de la UAB08193Bellaterra, Catalonia, Spain
Laboratorio de Microscopías Avanzadas (LMA)Instituto de Nanociencia de Aragon (INA); ARAID and Departamento de Fisica de la Materia CondensadaUniversidad de Zaragoza50018Zaragoza, Spain
Institucio Catalana de Recerca i Estudis Avancats (ICREA)Universidad de Zaragoza08010Barcelona, Catalonia, Spain
Institut Català de Nanociència i Nanotecnologia (ICN2)Campus UAB08193Bellaterra, Catalonia, Spain
Department of PhysicsNational University of Singapore, 2 Science Drive 3Singapore117542Singapore
Division of MicroelectronicsSchool of Electrical and Electronic Engineering, Nanyang Technological UniversitySingapore639798Singapore

† Present address: Department of Chemistry and Biochemistry, University of California, Los Angeles 90095, USA

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Abstract

Strain engineering provides an effective mean of tuning the fundamental properties of semiconductors for electric and optoelectronic applications. Here we report on how the applied strain changes the emission properties of hetero-structures consisting of different crystalline phases in the same CdS nanobelts. The strained portion was found to produce an additional emission peak on the low-energy side that was blueshifted with increasing strain. Furthermore, the additional emission peak obeyed the Varshni equation with temperature and exhibited the band-filling effect at high excitation power. This new emission peak may be attributed to spatially indirect exciton recombination between different crystalline phases of CdS. First-principles calculations were performed based on the spatially indirect exciton recombination, and the calculated and experimental results agreed with one another. Strain proved to be capable of enhancing the anti-Stokes emission, suggesting that the efficiency of laser cooling may be improved by strain engineering.

Keywords

strainCdS nanobeltsphotoluminescencespatially indirect exciton recombinationinter-crystalline phase transition

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Nano Research
Volume 8 Issue 9,
September 2015
Pages 3035-3044
DOI: 10.1007/s12274-015-0809-8
Cite this article:
Li D, Liu Y, Mata Mdl, et al. Strain-induced spatially indirect exciton recombination in zinc-blende/wurtzite CdS heterostructures. Nano Research, 2015, 8(9): 3035-3044. https://doi.org/10.1007/s12274-015-0809-8
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