AI Chat Paper
Discover the SciOpen Platform and Achieve Your Research Goals with Ease.
Search articles, authors, keywords, DOl and etc.
{{expandStatus?'Exit ':''}}Advanced Search
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm2/(V·s) by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.
Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 2010, 5, 722–726.
Liu, M.; Yin, X. B.; Ulin-Avila, E.; Geng, B. S.; Zentgraf, T.; Ju, L.; Wang, F.; Zhang, X. A graphene-based broadband optical modulator. Nature 2011, 474, 64–67.
Wang, X. M.; Cheng, Z. Z.; Xu, K.; Tsang, H. K.; Xu, J. B. High-responsivity graphene/silicon-heterostructure waveguide photodetectors. Nat. Photonics 2013, 7, 888–891.
Pospischil, A.; Humer, M.; Furchi, M. M.; Bachmann, D.; Guider, R.; Fromherz, T.; Mueller, T. CMOS-compatible graphene photodetector covering all optical communication bands. Nat. Photonics 2013, 7, 892–896.
Xia, F. N.; Mueller, T.; Lin, Y. M.; Valdes-Garcia, A.; Avouris, P. Ultrafast graphene photodetector. Nat. Nanotechnol. 2009, 4, 839–843.
Sun, D.; Aivazian, G.; Jones, A. M.; Ross, J. S.; Yao, W.; Cobden, D.; Xu, X. D. Ultrafast hot-carrier-dominated photocurrent in graphene. Nat. Nanotechnol. 2012, 7, 114–118.
Liu, C. H.; Chang, Y. C.; Norris, T. B.; Zhong, Z. H. Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Nat. Nanotechnol. 2014, 9, 273–278.
Sun, Z. H.; Chang, H. X. Graphene and graphene-like twodimensional materials in photodetection: Mechanisms and methodology. ACS Nano 2014, 8, 4133–4156.
Huang, X.; Yin, Z. Y.; Wu, S. X.; Qi, X. Y.; He, Q. Y.; Zhang, Q. C.; Yan, Q. Y.; Boey, F.; Zhang, H. Graphenebased materials: Synthesis, characterization, properties, and applications. Small 2011, 7, 1876–1902.
Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150.
Li, H.; Wu, J.; Yin, Z. Y.; Zhang, H. Preparation and applications of mechanically exfoliated single-layer and multilayer MoS2 and WSe2 nanosheets. Acc. Chem. Res. 2014, 47, 1067–1075.
Yin, Z. Y.; Li, H.; Li, H.; Jiang, L.; Shi, Y. M.; Sun, Y. H.; Lu, G.; Zhang, Q.; Chen, X. D.; Zhang, H. Single-layer MoS2 phototransistors. ACS Nano 2011, 6, 74–80.
Deng, Y. X.; Luo, Z.; Conrad, N. J.; Liu, H.; Gong, Y. J.; Najmaei, S.; Ajayan, P. M.; Lou, J.; Xu, X. F.; Ye, P. D. Black phosphorus–monolayer MoS2 van der Waals heterojunction p–n diode. ACS Nano 2014, 8, 8292–8299.
Yan, K.; Wu, D.; Peng, H. L.; Jin, L.; Fu, Q.; Bao, X. H.; Liu, Z. F. Modulation-doped growth of mosaic graphene with single-crystalline p–n junctions for efficient photocurrent generation. Nat. Commun. 2012, 3, 1280.
Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
Yu, W. J.; Li, Z.; Zhou, H. L.; Chen, Y.; Wang, Y.; Huang, Y.; Duan, X. F. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater. 2013, 12, 246–252.
Hu, P. A.; Zhang, J.; Yoon, M.; Qiao, X. F.; Zhang, X.; Feng, W.; Tan, P. H.; Zheng, W.; Liu, J. J.; Wang, X. N. et al. Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap. Nano Res. 2014, 7, 694–703.
Ross, J. S.; Klement, P.; Jones, A. M.; Ghimire, N. J.; Yan, J. Q.; Mandrus, D. G.; Taniguchi, T.; Watanabe, K.; Kitamura, K.; Yao, W. et al. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions. Nat. Nanotechnol. 2014, 9, 268–272.
Fang, H.; Battaglia, C.; Carraro, C.; Nemsak, S.; Ozdol, B.; Kang, J. S.; Bechtel, H. A.; Desai, S. B.; Kronast, F.; Unal, A. A. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. Proc. Natl. Acad. Sci. USA 2014, 111, 6198–6202.
Geim, A. K.; Grigorieva, I. V. van der Waals heterostructures. Nature 2013, 499, 419–425.
Yu, L. L.; Lee, Y. H.; Ling, X.; Santos, E. J. G.; Shin, Y. C.; Lin, Y. X.; Dubey, M.; Kaxiras, E.; Kong, J.; Wang, H. et al. Graphene/MoS2 hybrid technology for large-scale twodimensional electronics. Nano Lett. 2014, 14, 3055–3063.
Gong, Y. J.; Lin, J. H.; Wang, X. L.; Shi, G.; Lei, S. D.; Lin, Z.; Zou, X. L.; Ye, G. L.; Vajtai, R.; Yakobson, B. I. et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 2014, 13, 1135–1142.
Georgiou, T.; Jalil, R.; Belle, B. D.; Britnell, L.; Gorbachev, R. V.; Morozov, S. V.; Kim, Y. J.; Gholinia, A.; Haigh, S. J.; Makarovsky, O. et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 2013, 8, 100–103.
Huang, C. M.; Wu, S. F.; Sanchez, A. M.; Peters, J. J. P.; Beanland, R.; Ross, J. S.; Rivera, P.; Yao, W.; Cobden, D. H.; Xu, X. D. Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors. Nat. Mater. 2014, 13, 1096–1101.
Gu, X.; Cui, W.; Li, H.; Wu, Z. W.; Zeng, Z. Y.; Lee, S. T.; Zhang, H.; Sun, B. Q. A solution-processed hole extraction layer made from ultrathin MoS2 nanosheets for efficient organic solar cells. Adv. Energy Mater. 2013, 3, 1262–1268.
Chen, J. Z.; Wu, X. J.; Yin, L. S.; Li, B.; Hong, X.; Fan, Z. X.; Chen, B.; Xue, C.; Zhang, H. One-pot synthesis of CdS nanocrystals hybridized with single-layer transition-metal dichalcogenide nanosheets for efficient photocatalytic hydrogen evolution. Angew. Chem. 2014, 127, 1226–1230.
Pospischil, A.; Furchi, M. M.; Mueller, T. Solar-energy conversion and light emission in an atomic monolayer p–n diode. Nat. Nanotechnol. 2014, 9, 257–261.
Zhang, W. J.; Chuu, C. -P.; Huang, J. -K.; Chen, C. -H.; Tsai, M. -L.; Chang, Y. -H.; Liang, C. -T.; Chen, Y. -Z.; Chueh, Y. -L.; He, J. -H. et al. Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures. Sci. Rep. 2014, 4, 3826.
Yin, Z. Y.; Zhang, X.; Cai, Y. Q.; Chen, J. Z.; Wong, J. I.; Tay, Y. Y.; Chai, J. W.; Wu, J.; Zeng, Z. Y.; Zheng, B. et al. Preparation of MoS2–MoO3 hybrid nanomaterials for light–emitting diodes. Angew. Chem. 2014, 126, 12768–12773.
Zhang, J.; Zhu, Z. P.; Feng, X. L. Construction of twodimensional MoS2/CdS p–n nanohybrids for highly efficient photocatalytic hydrogen evolution. Chem. —Eur. J. 2014, 20, 10632–10635.
Lopez-Sanchez, O.; Lembke, D.; Kayci, M.; Radenovic, A.; Kis, A. Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 2013, 8, 497–501.
Choi, M. S.; Qu, D. S.; Lee, D.; Liu, X. C.; Watanabe, K.; Taniguchi, T.; Yoo, W. J. Lateral MoS2 p–n junction formed by chemical doping for use in high-performance optoelectronics. ACS Nano 2014, 8, 9332–9340.
Yu, W. J.; Liu, Y.; Zhou, H. L.; Yin, A. X.; Li, Z.; Huang, Y.; Duan, X. F. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat. Nanotechnol. 2013, 8, 952–958.
Lee, C. H.; Lee, G. H.; van der Zande, A. M.; Chen, W. C.; Li, Y. L.; Han, M. Y.; Cui, X.; Arefe, G.; Nuckolls, C.; Heinz, T. F. et al. Atomically thin p–n junctions with van der Waals heterointerfaces. Nat. Nanotechnol. 2014, 9, 676–681.
Liu, F. C.; Shimotani, H.; Shang, H.; Kanagasekaran, T.; Zólyomi, V.; Drummond, N.; Fal'ko, V. I.; Tanigaki, K. High-sensitivity photodetectors based on multilayer GaTe flakes. ACS Nano 2014, 8, 752–760.
Peng, H. L.; Dang, W. H.; Cao, J.; Chen, Y. L.; Wu, D.; Zheng, W. S.; Li, H.; Shen, Z. -X.; Liu, Z. F. Topological insulator nanostructures for near-infrared transparent flexible electrodes. Nat. Chem. 2012, 4, 281–286.
Wang, Z. X.; Xu, K.; Li, Y. C.; Zhan, X. Y.; Safdar, M.; Wang, Q. S.; Wang, F. M.; He, J. Role of Ga vacancy on a multilayer GaTe phototransistor. ACS Nano 2014, 8, 4859–4865.
Wan, J. Z.; Brebner, J. L.; Leonelli, R.; Graham, J. T. Optical properties of excitons in GaTe. Phys. Rev. B 1992, 46, 1468–1471.
Lee, C.; Yan, H. G.; Brus, L. E.; Heinz, T. F.; Hone, J.; Ryu, S. Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano 2010, 4, 2695–2700.
Granqvist, C. G.; Hultåker, A. Transparent and conducting ITO films: New developments and applications. Thin Solid Films 2002, 411, 1–5.
Ng, W. L.; Lourenço, M. A.; Gwilliam, R. M.; Ledain, S.; Shao, G.; Homewood, K. P. An efficient room-temperature silicon-based light-emitting diode. Nature 2001, 410, 192–194.
Zólyomi, V.; Drummond, N. D.; Fal'ko, V. I. Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides. Phys. Rev. B. 2013, 87, 195403.
Sánchez-Royo, J. F.; Pellicer-Porres, J.; Segura, A.; Muñoz-Sanjosé, V.; Tobías, G.; Ordejón, P.; Canadell, E.; Huttel, Y. Angle-resolved photoemission study and first-principles calculation of the electronic structure of GaTe. Phys. Rev. B. 2002, 65, 115201.
京公网安备11010802044758号