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Research Article

A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Nguyen Minh Triet1, Tran Quang Trung1, Nguyen Thi Dieu Hien1, Saqib Siddiqui1, Do-Il Kim1, Jai Chan Lee1, Nae-Eung Lee1,2,3( )
School of Advanced Materials Science and EngineeringSungkyunkwan University, Suwon, Kyunggi-do440-746Korea
Sungkyunkwan University (SKKU) Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University, Suwon, Kyunggi-do, 440-746440-746Korea
Samsung Advanced Institute for Health Sciences and Technology (SAIHST)Sungkyunkwan University, Suwon, Kyunggi-do, 440-746440-746Korea
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Abstract

Flexible magnetoelectric (ME) materials have been studied for new applications such as memory, energy harvesters, and magnetic field sensors. Herein, with the widely studied and progressive advantages of ME phenomena in the multiferroic field, we demonstrate a new approach for utilizing flexible ME materials as gate dielectric layers in ME organic field-effect transistors (ME-OFET) that can be used for sensing a magnetic field and extracting the ME properties of the gate dielectric itself. The magnetoelectric nanohybrid gate dielectric layer comprises sandwiched stacks of magnetostrictive CoFe2O4 nanoparticles and a highly piezoelectric poly(vinylidene fluoride-co-trifluoroethylene) layer. While varying the magnetic field applied to the ME gate dielectric, the ME effect in the functional gate dielectric modulates the channel conductance of the ME-OFET owing to a change in the effective gate field. The clear separation of the ME responses in the gate dielectric layer of ME-OFET from those of the other parameters was demonstrated using the AC gate biasing method and enabled the extraction of the ME coefficient of ME materials. Additionally, the device shows high stability after cyclic bending of 10, 000 cycles at a banding radius of 1.2 cm. The device has significant potential for not only the extraction of the intrinsic characterization of ME materials but also the sensing of a magnetic field in integrated flexible electronic systems.

Keywords

magnetoelectricmagnetostrictionCoFe2O4 nanoparticlesP(VDF-TrFE)organic field-effect transistormagnetic sensor

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References

1

Dong, S. X.; Li, J. F.; Viehland, D. Vortex magnetic field sensor based on ring-type magnetoelectric laminate. Appl. Phys. Lett. 2004, 85, 2307–2309.
Crossref Google Scholar
2

Israel, C.; Mathur, N. D.; Scott, J. F. A one-cent room- temperature magnetoelectric sensor. Nat. Mater. 2008, 7, 93–94.
Crossref Google Scholar
3

Giang, D. T. H.; Duc, P. A.; Ngoc, N. T.; Duc, N. H. Geomagnetic sensors based on Metglas/PZT laminates. Sens. Act. A: Phys. 2012, 179, 78–82.
Crossref Google Scholar
4

Giang, D. T. H.; Duc, N. H. Magnetoelectric sensor for microtesla magnetic-fields based on (Fe80Co20)78Si12B10/PZT laminates. Sens. Act. A: Phys. 2009, 149, 229–232.
Crossref Google Scholar
5

Zhang, C. L.; Yang, J. S.; Chen. W. Q. Harvesting magnetic energy using extensional vibration of laminated magnetoelectric plates. Appl. Phys. Lett. 2009, 95, 013511.
Crossref Google Scholar
6

Patil, D. R.; Zhou, Y.; Kang, J. E.; Sharpes, N.; Jeong, D. -Y.; Kim, Y. D.; Kim, K. H.; Priya, S.; Ryu, J. Anisotropic self- biased dual-phase low frequency magneto-mechano-electric energy harvesters with giant power densities. APL Mat. 2014, 2, 046102.
Crossref Google Scholar
7

Bibes, M.; Barthélémy A. Multiferroics: Towards a magnetoelectric memory. Nat. Mater. 2008, 7, 425–426.
Crossref Google Scholar
8

Wang, Z. G.; Zhang, Y.; Wang, Y. J.; Li, Y. X.; Luo, H. S.; Li, J. F.; Viehland, D. Magnetoelectric assisted 180° magnetization switching for electric field addressable writing in magnetoresistive random-access memory. ACS Nano. 2014, 8, 7793–7800.
Crossref Google Scholar
9

Zavaliche, F.; Zheng, H.; Ardabili, L. M.; Yang, S. Y.; Zhan, Q.; Shafer, P.; Reilly, E.; Chopdekar, R.; Jia, Y.; Wright, P.; Schlom, D. G.; Suzuki, Y.; Ramesh, R. Electrically assisted magnetic recording in multiferroic nanostructures. Nano Lett. 2005, 5, 1793–1796.
Crossref Google Scholar
10

Hur, N.; Park, S.; Sharma, P. A.; Ahn, J. S.; Guha, S.; Cheong, S-W. Electric polarization reversal and memory in a multiferroic material induced by magnetic fields. Nature. 2004, 429, 392–395.
Crossref Google Scholar
11

Zhang, Y.; Li, Z.; Deng, C. Y.; Ma, J.; Lin, Y. H.; Nan, C. W. Demonstration of magnetoelectric read head of multiferroic heterostructures. Appl. Phys. Lett. 2008, 92, 152510.
Crossref Google Scholar
12

Scott, J. F. Data storage: Multiferroic memories. Nat. Mater. 2007, 6, 256–257.
Crossref Google Scholar
13

Martins, P.; Lanceros-Méndez, S. Polymer-based magnetoelectric materials. Adv. Func. Mater. 2013, 23, 3371–3385.
Crossref Google Scholar
14

Nan, C. W.; Bichurin, M. I.; Dong, S. X.; Viehland, D.; Srinivasan, G. Multiferroic magnetoelectric composites: Historical perspective, status, and future directions. J. Appl. Phys. 2008, 103, 031101.
Crossref Google Scholar
15

Zhai, J. Y.; Cai, N.; Shi, Z.; Lin, Y. H.; Nan, C. W. Magnetic- dielectric properties of NiFe2O4/PZT particulate composites. J. Phys. D: Appl. Phys. 2004, 37, 823–827.
Crossref Google Scholar
16

Ryu, H.; Murugavel, P.; Lee, J. H.; Chae, S. C.; Noh, T. W.; Oh, Y. S.; Kim, K. H.; Jang, J. H.; Kim, M.; Bae, C. et al. Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3- NiFe2O4 composite films. Appl. Phys. Lett. 2006, 89, 102907.
Crossref Google Scholar
17

Wan, J. G.; Wang, X. W.; Wu, Y. J.; Zeng, M.; Wang, Y.; Jiang, H.; Zhou, W. Q.; Wang, G. H.; Liu, J. M. Magnetoelectric CoFe2O4 - Pb(Zr, Ti)O3 composite thin films derived by a sol-gel process. Appl. Phys. Lett. 2005, 86, 122501.
Crossref Google Scholar
18

Gao, X. S.; Rodriguez, B. J.; Liu, L. F.; Birajdar, B.; Pantel, D.; Ziese, M.; Alexe, M.; Hesse, D. Microstructure and properties of well ordered multiferroic Pb(Zr, Ti)O3/CoFe2O4 nanocomposites. ACS Nano. 2010, 4, 1099–1107.
Crossref Google Scholar
19

Chen, Y. J.; Hsieh, Y. H.; Liao, S. C.; Hu, Z. W.; Huang, M. J.; Kuo, W. C.; Chin, Y. Y.; Uen, T. M.; Juang, J. Y.; Lai, C. H. et al. Strong magnetic enhancement in self-assembled multiferroic-ferrimagnetic nanostructures. Nanoscale. 2013, 5, 4449–4453.
Crossref Google Scholar
20

Zheng, H.; Wang, J.; Lofland, S. E.; Ma, Z.; Mohaddes- Ardabili, L.; Zhao, T.; Salamanca-Riba, L.; Shinde, S. R.; Ogale, S. B.; Bai, F. et al. Multiferroic BaTiO3-CoFe2O4 nanostructures. Science. 2004, 303, 661–663.
Crossref Google Scholar
21

Imai, A.; Cheng, X.; Xin, H. L.; Eliseev, E. A.; Morozovska, A. N.; Kalinin, S. V.; Takahashi, R.; Lippmaa, M.; Matsumoto, Y.; Nagarajan, V. Epitaxial Bi5Ti3FeO15-CoFe2O4 pillar-matrix multiferroic nanostructures. ACS Nano. 2013, 7, 11079–11086.
Crossref Google Scholar
22

Zavaliche, F.; Zheng, H.; Mohaddes-Ardabili, L.; Yang, S. Y.; Zhan, Q.; Shafer, P.; Reilly, E.; Chopdekar, R.; Jia, Y.; Wright, P. et al. Electric field-induced magnetization switching in epitaxial columnar nanostructures. Nano Lett. 2005, 5, 1793–1796.
Crossref Google Scholar
23

Hu, J. -M.; Yang, T. N.; Wang, J. J.; Huang, H. B.; Zhang, J. X.; Chen, L. Q.; Nan, C. W. Purely electric-field-driven perpendicular magnetization reversal. Nano Lett. 2015, 15, 616–622.
Crossref Google Scholar
24

Liu, X. H.; Liu, S. Y.; Han, M. G.; Zhao, L.; Deng, H. M.; Li, J.; Zhu, Y. M.; Krusin-Elbaum, L.; O'Brien, S. Magnetoelectricity in CoFe2O4 nanocrystal-P(VDF-HFP) thin films. Nano. Res. Lett. 2013, 8, 374.
Crossref Google Scholar
25

Srinivasan, G.; Rasmussen, E. T.; Hayes, R. Magnetoelectric effects in ferrites-lead zirconate titanate layered composites: The influence of zinc substitution in ferrites. Phys. Rev. B. 2003, 67, 014418.
Crossref Google Scholar
26

Wang, Y. J.; Gray, D.; Gao, J. Q.; Berry, D.; Li, M. H.; Li, J. F.; Viehland, D.; Luo, H. Improvement of magnetoelectric properties in Metglas/Pb(Mg1/3Nb2/3)O3-PbTiO3 laminates by poling optimization, J. Alloys Comp. 2012, 519, 1–3.
Crossref Google Scholar
27

Molegraaf, H. J. A.; Hoffman, J.; Vaz, C. A. F.; Gariglio, S.; van der Marel, D.; Ahn, C. H.; Triscone, J. M. Magnetoelectric effects in complex oxides with competing ground states. Adv. Mater. 2009, 21, 3470–3474.
Crossref Google Scholar
28

Silva, M.; Reis, S.; Lehmann, C. S.; Martins, P.; Lanceros- Mendez, S.; Lasheras, A.; Gutiérrez, J.; Barandiarán, J. M. Optimization of the magnetoelectric response of poly(vinylidene fluoride)/epoxy/vitrovac laminates. ACS Appl. Mater. Inter. 2013, 5, 10912–10919.
Crossref Google Scholar
29

Zhang, S. T.; Zhang, Y.; Luo, Z. L.; Lu, M. H.; Gu, Z. B.; Chen, Y. F. Multiferroic properties of Bi0.8La0.2FeO3/CoFe2O4 multilayer thin films. Appl. Surf. Sci. 2009, 255, 5092–5095.
Crossref Google Scholar
30

Wang, Y.; Hu, J. M.; Lin, Y. H.; Nan, C. W. Multiferroic magnetoelectric composite nanostructures. NPG Asia Mater. 2010, 2, 61–68.
Crossref Google Scholar
31

Vaz, C. A. F.; Hoffman, J.; Ahn, C. H.; Ramesh, R. Magnetoelectric coupling effects in multiferroic complex oxide composite structures. Adv. Mater. 2010, 22, 2900–2918.
Crossref Google Scholar
32

Cui, N. Y.; Wu, W. W.; Zhao, Y.; Bai, S.; Meng, L. X.; Qin, Y.; Wang, Z. L. Magnetic force driven nanogenerators as a noncontact energy harvester and sensor. Nano Lett. 2012, 12, 3701–3705.
Crossref Google Scholar
33

Yang, Y.; Lin, L.; Zhang, Y.; Jing, Q. S.; Hou, T. C.; Wang, Z. L. Self-powered magnetic sensor based on a triboelectric nanogenerator. ACS Nano. 2012, 6, 10378–10383.
Crossref Google Scholar
34

Maaz, K.; Mumtaz, A.; Hasanain, S. K.; Ceylan, A. Synthesis and magnetic properties of cobalt ferrite (CoFe2O4) nanoparticles prepared by wet chemical route. Mag. Mag. Mater. 2007, 308, 289–295.
Crossref Google Scholar
35

Tien, N. T.; Jeon, S.; Kim, D. I.; Trung, T. Q.; Jang, M.; Hwang, B. U.; Byun, K. E.; Bae, J.; Lee, E.; Tok, J. B. H.; Bao, Z. N.; Lee, N. E.; Park, J. J. A flexible bimodal sensor array for simultaneous sensing of pressure and temperature. Adv. Mater. 2014, 26, 796–804.
Crossref Google Scholar
36

Tien, N. T.; Trung, T. Q.; Seol, Y. G.; Kim, D. I.; Lee, N. E. Physically responsive field-effect transistors with giant electromechanical coupling induced by nanocomposite gate dielectrics. ACS Nano. 2011, 5, 7069–7076.
Crossref Google Scholar
37

Trung, T. Q.; Tien, N. T.; Seol, Y. G.; Lee. N. E. Transparent and flexible organic field-effect transistor for multi-modal sensing. Org. Electron. 2012, 13, 533–540.
Crossref Google Scholar
38

Tien, N. T.; Seol, Y. G.; Dao, L. H. A.; Noh, H. Y.; Lee, N. E. Utilizing highly crystalline pyroelectric material as functional gate dielectric in organic thin-film transistors. Adv. Mater. 2009, 21, 910–915.
Crossref Google Scholar
Nano Research
Volume 8 Issue 10,
October 2015
Pages 3421-3429
DOI: 10.1007/s12274-015-0843-6
Cite this article:
Triet NM, Trung TQ, Hien NTD, et al. A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer. Nano Research, 2015, 8(10): 3421-3429. https://doi.org/10.1007/s12274-015-0843-6

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Received: 07 April 2015
Revised: 23 May 2015
Accepted: 17 June 2015
Published: 08 September 2015
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2015
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