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Research Article

Temperature-dependent resonance energy transfer from CdSe–ZnS core–shell quantum dots to monolayer MoS2

Juan Li, Weina Zhang, Yao Zhang, Hongxiang Lei, Baojun Li()
State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of Physics and EngineeringSun Yat-Sen UniversityGuangzhou510275China
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Abstract

We investigated the temperature-dependent resonance energy transfer (ET) from CdSe–ZnS core–shell quantum dots (QDs) to monolayer MoS2. QDs/MoS2 structures were fabricated using a spin-coating method. Photoluminescence (PL) spectra and decay curves of the QDs/MoS2 structures were measured in the temperature range of 80-400 K. The results indicate that the PL intensity of the QDs decreased approximately 81% with increasing temperature, whereas that of the MoS2 increased up to a maximum of 78% at 300 K because of the combined effect of thermal quenching and the ET in the QDs/MoS2 structures. The ET efficiency and ET rate also exhibited similar variation trends, both increased with increasing temperature from 80 to 260 K and then decreased until 400 K, resulting in a maximum ET efficiency of 22% and an ET rate of 1.17 ns–1 at ~260 K. These results are attributed to the varied distribution of the localized excitons and free excitons in the QDs/MoS2 structures with increasing temperature.

Keywords

temperature dependenceresonance energy transferquantum dotsmonolayer MoS2

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Nano Research
Volume 9 Issue 9,
September 2016
Pages 2623-2631
DOI: 10.1007/s12274-016-1149-z
Cite this article:
Li J, Zhang W, Zhang Y, et al. Temperature-dependent resonance energy transfer from CdSe–ZnS core–shell quantum dots to monolayer MoS2. Nano Research, 2016, 9(9): 2623-2631. https://doi.org/10.1007/s12274-016-1149-z
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