AI Chat Paper
Discover the SciOpen Platform and Achieve Your Research Goals with Ease.
We review lattice vibrational modes in atomically thin two-dimensional (2D) layered materials, focusing on 2D materials beyond graphene, such as group Ⅵ transition metal dichalcogenides, topological insulator bismuth chalcogenides, and black phosphorus. Although the composition and structure of those materials are remarkably different, they share a common and important feature, i.e., their bulk crystals are stacked via van der Waals interactions between "layers" while each layer is comprised of one or more atomic planes. First, we review the background of some 2D materials (MX2, M = Mo, W; X = S, Se, Te. Bi2X3, X = Se, Te. Black phosphorus), including crystalline structures and stacking order. We then review the studies on vibrational modes of layered materials and nanostructures probed by the powerful yet nondestructive Raman spectroscopy technique. Based on studies conducted before 2010, recent investigations using more advanced techniques have pushed the studies of phonon modes in 2D layered materials to the atomically thin regime, down to monolayers. We will classify the recently reported general features into the following categories: phonon confinement effects and electron-phonon coupling, anomalous shifts in high-frequency intralayer vibrational modes and surface effects, reduced dimensionality and lower symmetry, the linear chain model and the substrate effect, stacking orders and interlayer shear modes, polarization dependence, and the resonance effect. Within the seven categories, both intralayer and interlayer vibrational modes will be discussed. The comparison between different materials will be provided as well.
Geim, A. K.; Novoselov, K. S. The rise of graphene. Nat. Mater. 2007, 6, 183-191.
Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of two- dimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699-712.
Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L. J.; Loh, K. P.; Zhang, H. Z. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 2013, 5, 263-275.
Xu, X. D.; Yao, W.; Xiao, D.; Heinz, T. F. Spin and pseudospins in layered transition metal dichalcogenides. Nat. Phys. 2014, 10, 343-350.
Liu, H.; Du, Y. C.; Deng, Y. X.; Ye, P. D. Semiconducting black phosphorus: Synthesis, transport properties and electronic applications. Chem. Soc. Rev. 2015, 44, 2732-2743.
Ling, X.; Wang, H.; Huang, S. X.; Xia, F. N.; Dresselhaus, M. S. The renaissance of black phosphorus. Proc. Natl. Acad. Sci. USA 2015, 112, 4523-4530.
Geim, A. K.; Grigorieva, I. V. Van der Waals heterostructures. Nature 2013, 499, 419-425.
Zhang, Y.; He, K.; Chang, C. -Z.; Song, C. -L.; Wang, L. -L.; Chen, X.; Jia, J. -F.; Fang, Z.; Dai, X.; Shan, W. -Y. et al. Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit. Nat. Phys. 2010, 6, 584-588.
Huang, X.; Zhang, H. Molecular crystals on two-dimensional van der Waals substrates. Sci. China Mater. 2015, 58, 5-8.
Novoselov, K. S.; Jiang, Z.; Zhang, Y.; Morozov, S. V.; Stormer, H. L.; Zeitler, U.; Maan, J. C.; Boebinger, G. S.; Kim, P.; Geim, A. K. Room-temperature quantum hall effect in graphene. Science 2007, 315, 1379-1379.
Hasan, M. Z.; Kane, C. L. Colloquium: Topological insulators. Rev. Mod. Phys. 2010, 82, 3045-3067.
Qi, X. -L.; Zhang, S. -C. Topological insulators and superconductors. Rev. Mod. Phys. 2011, 83, 1057-1110.
Splendiani, A.; Sun, L.; Zhang, Y. B.; Li, T. S.; Kim, J.; Chim, C. -Y.; Galli, G.; Wang, F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010, 10, 1271-1275.
Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
Gutiérrez, H. R.; Perea-López, N.; Elías, A. L.; Berkdemir, A.; Wang, B.; Lv, R. T.; López-Urías, F.; Crespi, V. H.; Terrones, H.; Terrones, M. Extraordinary room-temperature photoluminescence in triangular WS2 monolayers. Nano Lett. 2013, 13, 3447-3454.
Li, L. K.; Yu, Y. J.; Ye, G. J.; Ge, Q. Q.; Ou, X. D.; Wu, H.; Feng, D. L.; Chen, X. H.; Zhang, Y. B. Black phosphorus field-effect transistors. Nat. Nanotechnol. 2014, 9, 372-377.
Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X. F.; Tománek, D.; Ye, P. D. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano 2014, 8, 4033-4041.
Wang, X. M.; Jones, A. M.; Seyler, K. L.; Tran, V.; Jia, Y. C.; Zhao, H.; Wang, H.; Yang, L.; Xu, X. D.; Xia, F. N. Highly anisotropic and robust excitons in monolayer black phosphorus. Nat. Nanotechnol. 2015, 10, 517-521.
Xia, F. N.; Wang, H.; Jia, Y. C. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 2014, 5, 4458.
Ando, T.; Fowler, A. B.; Stern, F. Electronic properties of two-dimensional systems. Rev. Mod. Phys. 1982, 54, 437-672.
Kim, S.; Konar, A.; Hwang, W. S.; Lee, J. H.; Lee, J.; Yang, J.; Jung, C.; Kim, H.; Yoo, J. B.; Choi, J. Y. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 2012, 3, 1011.
Mak, K. F.; He, K. L.; Shan, J.; Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotechnol. 2012, 7, 494-498.
Zeng, H. L.; Dai, J. F.; Yao, W.; Xiao, D.; Cui, X. D. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 2012, 7, 490-493.
Cao, T.; Wang, G.; Han, W. P.; Ye, H. Q.; Zhu, C. R.; Shi, J. R.; Niu, Q.; Tan, P. H.; Wang, E. G.; Liu, B. L. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nat. Commun. 2012, 3, 887.
Zhang, X.; Qiao, X. -F.; Shi, W.; Wu, J. -B.; Jiang, D. -S.; Tan, P. -H. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material. Chem. Soc. Rev. 2015, 44, 2757-2785.
Molina-Sánchez, A.; Hummer, K.; Wirtz, L. Vibrational and optical properties of MoS2: From monolayer to bulk. Surf. Sci. Rep. 2015, 70, 554-586.
Ji, J. T.; Dong, S.; Zhang, A. M.; Zhang, Q. M. Low- frequency interlayer vibration modes in two-dimensional layered materials. Phys. E 2016, 80, 130-141.
Zhang, X.; Tan, Q. -H.; Wu, J. -B.; Shi, W.; Tan, P. -H. Review on the Raman spectroscopy of different types of layered materials. Nanoscale 2016, 8, 6435-6450.
Luo, X.; Lu, X.; Koon, G. K. W.; Neto, A. H. C.; Özyilmaz, B.; Xiong, Q. H.; Quek, S. Y. Large frequency change with thickness in interlayer breathing mode-significant interlayer interactions in few layer black phosphorus. Nano Lett. 2015, 15, 3931-3938.
Zhang, H. J.; Liu, C. -X.; Qi, X. -L.; Dai, X.; Fang, Z.; Zhang, S. -C. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface. Nat. Phys. 2009, 5, 438-442.
Chen, Y. L.; Analytis, J. G.; Chu, J. H.; Liu, Z. K.; Mo, S. K.; Qi, X. L.; Zhang, H. J.; Lu, D. H.; Dai, X.; Fang, Z. et al. Experimental realization of a three-dimensional topological insulator, Bi2Te3. Science 2009, 325, 178-181.
Keum, D. H.; Cho, S.; Kim, J. H.; Choe, D. -H.; Sung, H. -J.; Kan, M.; Kang, H.; Hwang, J. -Y.; Kim, S. W.; Yang, H. et al. Bandgap opening in few-layered monoclinic MoTe2. Nat. Phys. 2015, 11, 482-486.
Qian, X. F.; Liu, J. W.; Fu, L.; Li, J. Quantum spin Hall effect in two-dimensional transition metal dichalcogenides. Science 2014, 346, 1344-1347.
Eda, G.; Yamaguchi, H.; Voiry, F.; Fujita, T.; Chen, M. W.; Chowalla, M. Photoluminescence from chemically exfoliated MoS2. Nano Lett. 2011, 11, 5111-5116.
Gupta, U.; Naidu, B. S.; Maitra, U.; Singh, A.; Shirodkar, S. N.; Waghmare, U. V.; Rao, C. N. R. Characterization of few-layer 1T-MoSe2 and its superior performance in the visible-light induced hydrogen evolution reaction. APL Mater. 2014, 2, 092802.
Shirodkar, S. N.; Waghmare, U. V. Emergence of ferroelectricity at a metal-semiconductor transition in a 1T monolayer of MoS2. Phys. Rev. Lett. 2014, 112, 157601.
Amara, K. K.; Chen, Y. F.; Lin, Y. -C.; Kumar, R.; Okunishi, E.; Suenaga, K.; Quek, S. Y.; Eda, G. Dynamic structural evolution of metal-metal bonding network in monolayer WS2. Chem. Mater. 2016, 28, 2308-2314.
Wilson, J. A.; Yoffe, A. D. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv. Phys. 1969, 18, 193-335.
Suzuki, R.; Sakano, M.; Zhang, Y. J.; Akashi, R.; Morikawa, D.; Harasawa, A.; Yaji, K.; Kuroda, K.; Miyamoto, K.; Okuda, T. et al. Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry. Nat. Nanotechnol. 2014, 9, 611-617.
Raman, C. V.; Krishnan, K. S. A new type of secondary radiation. Nature 1928, 121, 501-502.
Raman, C. V. A change of wave-length in light scattering. Nature 1928, 121, 619.
Cardona, M. Light Scattering in Solids I; Springer-Verlag: Berlin, 1983.
Ferrari, A. C.; Robertson, J. Raman spectroscopy of amorphous, nanostructured, diamond-like carbon, and nanodiamond. Phil. Trans. R. Soc. A 2004, 362, 2477-2512.
Ferrari, A. C. Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects. Solid State Commun. 2007, 143, 47-57.
Ferrari, A. C.; Basko, D. M. Raman spectroscopy as a versatile tool for studying the properties of graphene. Nat. Nanotechnol. 2013, 8, 235-246.
Malard, L. M.; Pimenta, M. A.; Dresselhaus, G.; Dresselhaus, M. S. Raman spectroscopy in graphene. Phys. Rep. 2009, 473, 51-87.
Ni, Z. H.; Wang, Y. Y.; Yu, T.; Shen, Z. X. Raman spectroscopy and imaging of graphene. Nano Res. 2008, 1, 273-291.
Dresselhaus, M. S.; Dresselhaus, G.; Saito, R.; Jorio, A. Raman spectroscopy of carbon nanotubes. Phys. Rep. 2005, 409, 47-99.
Dresselhaus, M. S.; Eklund, P. C. Phonons in carbon nanotubes. Adv. Phys. 2000, 49, 705-814.
Eklund, P. C.; Holden, J. M.; Jishi, R. A. Vibrational-modes of carbon nanotubes; Spectroscopy and theory. Carbon 1995, 33, 959-972.
Chen, G.; Wu, J.; Lu, Q. J.; Gutierrez, H. R.; Xiong, Q. H.; Pellen, M. E.; Petko, J. S.; Werner, D. H.; Eklund, P. C. Optical antenna effect in semiconducting nanowires. Nano Lett. 2008, 8, 1341-1346.
Jorio, A.; Souza Filho, A. G.; Brar, V. W.; Swan, A. K.; Ünlü, M. S.; Goldberg, B. B.; Righi, A.; Hafner, J. H.; Lieber, C. M.; Saito, R. et al. Polarized resonant Raman study of isolated single-wall carbon nanotubes: Symmetry selection rules, dipolar and multipolar antenna effects. Phys. Rev. B 2002, 65, 121402.
Wang, R. P.; Xu, G.; Jin, P. Size dependence of electron- phonon coupling in ZnO nanowires. Phys. Rev. B 2004, 69, 113303.
Zhang, Q.; Zhang, J.; Utama, M. I. B.; Peng, B.; de la Mata, M.; Arbiol, J.; Xiong, Q. H. Exciton-phonon coupling in individual ZnTe nanorods studied by resonant Raman spectroscopy. Phys. Rev. B 2012, 85, 085418.
Chen, Y. Q.; Peng, B.; Wang, B. Raman spectra and temperature-dependent Raman scattering of silicon nanowires. J. Phys. Chem. C 2007, 111, 5855-5858.
Zhang, Q.; Liu, X. F.; Utama, M. I. B.; Zhang, J.; de la Mata, M.; Arbiol, J.; Lu, Y. H.; Sum, T. C.; Xiong, Q. H. Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt. Nano Lett. 2012, 12, 6420-6427.
Adu, K. W.; Gutiérrez, H. R.; Kim, U. J.; Eklund, P. C. Inhomogeneous laser heating and phonon confinement in silicon nanowires: A micro-Raman scattering study. Phys. Rev. B 2006, 73, 155333.
Adu, K. W.; Xiong, Q.; Gutierrez, H. R.; Chen, G.; Eklund, P. C. Raman scattering as a probe of phonon confinement and surface optical modes in semiconducting nanowires. Appl. Phys. A 2006, 85, 287-297.
Wang, R. P.; Zhou, G. W.; Liu, Y. L.; Pan, S. H.; Zhang, H. Z.; Yu, D. P.; Zhang, Z. Raman spectral study of silicon nanowires: High-order scattering and phonon confinement effects. Phys. Rev. B 2000, 61, 16827-16832.
Piscanec, S.; Cantoro, M.; Ferrari, A. C.; Zapien, J. A.; Lifshitz, Y.; Lee, S. T.; Hofmann, S.; Robertson, J. Raman spectroscopy of silicon nanowires. Phys. Rev. B 2003, 68, 241312.
Gupta, R.; Xiong, Q.; Adu, C. K.; Kim, U. J.; Eklund, P. C. Laser-induced Fano resonance scattering in silicon nanowires. Nano Lett. 2003, 3, 627-631.
Xiong, Q. H.; Wang, J. G.; Reese, O.; Lew Yan Voon, L. C.; Eklund, P. C. Raman scattering from surface phonons in rectangular cross-sectional w-ZnS nanowires. Nano Lett. 2004, 4, 1991-1996.
Gupta, R.; Xiong, Q. H.; Mahan, G. D.; Eklund, P. C. Surface optical phonons in gallium phosphide nanowires. Nano Lett. 2003, 3, 1745-1750.
Ferraro, J. R.; Nakamoto, K.; Brown, C. W. Introductory Raman Spectroscopy, 2nd ed.; Elsevier: Amsterdam, 2003.
Smith, E.; Dent, G. Modern Raman Spectroscopy—A Practical Approach; Wiley: Chichester, 2005.
Loudon, R. The Raman effect in crystals. Adv. Phys. 2001, 50, 813-864.
Wieting, T. J. Long-wavelength lattice vibrations of MoS2 and GaSe. Solid State Commun. 1973, 12, 931-935.
Nemanich, R. J.; Lucovsky, G.; Solin, S. A. Long Wavelength Lattice Vibrations of Graphite. In Proceedings of the International Conference on Lattice Dynamics, Paris, France, 1977, pp 619-621.
Yu, P.; Cardona, M. Fundamentals of Semiconductors: Physics and Materials Properties, 4th ed.; Springer-Verlag: Berlin, 2010.
Baroni, S.; de Gironcoli, S.; Dal Corso, A.; Giannozzi, P. Phonons and related crystal properties from density-functional perturbation theory. Rev. Mod. Phys. 2001, 73, 515-562.
Brüesch, P. Phonons: Theory and Experiments Ⅱ: Experiments and Interpretation of Experimental Results; Springer-Verlag: Berlin, 1986.
Cardona, M.; Güntherodt, G. Light Scattering in Solids Ⅱ; Springer-Verlag: Berlin, 1982.
Luo, X.; Zhao, Y. Y.; Zhang, J.; Xiong, Q. H.; Quek, S. Y. Anomalous frequency trends in MoS2 thin films attributed to surface effects. Phys. Rev. B 2013, 88, 075320.
Umari, P.; Pasquarello, A.; Dal Corso, A. Raman scattering intensities in α-quartz: A first-principles investigation. Phys. Rev. B 2001, 63, 094305.
Wu, J. -B.; Zhang, X.; Ijäs, M.; Han, W. -P.; Qiao, X. -F.; Li, X. -L.; Jiang, D. -S.; Ferrari, A. C.; Tan, P. -H. Resonant Raman spectroscopy of twisted multilayer graphene. Nat. Commun. 2014, 5, 5309.
Coh, S.; Tan, L. Z.; Louie, S. G.; Cohen, M. L. Theory of the Raman spectrum of rotated double-layer graphene. Phys. Rev. B 2013, 88, 165431.
Allard, A.; Wirtz, L. Graphene on metallic substrates: Suppression of the kohn anomalies in the phonon dispersion. Nano Lett. 2010, 10, 4335-4340.
Kern, G.; Kresse, G.; Hafner, J. Ab initio calculation of the lattice dynamics and phase diagram of boron nitride. Phys. Rev. B 1999, 59, 8551-8559.
Serrano, J.; Bosak, A.; Arenal, R.; Krisch, M.; Watanabe, K.; Taniguchi, T.; Kanda, H.; Rubio, A.; Wirtz, L. Vibrational properties of hexagonal boron nitride: Inelastic X-ray scattering and ab initio calculations. Phys. Rev. Lett. 2007, 98, 095503.
Wirtz, L.; Rubio, A. The phonon dispersion of graphite revisited. Solid State Commun. 2004, 131, 141-152.
Dion, M.; Rydberg, H.; Schröder, E.; Langreth, D. C.; Lundqvist, B. I. Van der Waals density functional for general geometries. Phys. Rev. Lett. 2004, 92, 246401.
Cooper, V. R. Van der Waals density functional: An appropriate exchange functional. Phys. Rev. B 2010, 81, 161104(R).
Grimme, S.; Antony, J.; Ehrlich, S.; Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. J. Chem. Phys. 2010, 132, 154104.
Zhao, Y. Y.; Luo, X.; Li, H.; Zhang, J.; Araujo, P. T.; Gan, C. K.; Wu, J.; Zhang, H.; Quek, S. Y.; Dresselhaus, M. S. et al. Interlayer breathing and shear modes in few-trilayer MoS2 and WSe2. Nano Lett. 2013, 13, 1007-1015.
Luo, X.; Sullivan, M. B.; Quek, S. Y. First-principles investigations of the atomic, electronic, and thermoelectric properties of equilibrium and strained Bi2Se3 and Bi2Te3 including van der Waals interactions. Phys. Rev. B 2012, 86, 184111.
Verble, J. L.; Wieting, T. J. Lattice mode degeneracy in MoS2 and other layer compounds. Phys. Rev. Lett. 1970, 25, 362-365.
Wieting, T. J.; Verble, J. L. Infrared and Raman studies of long-wavelength optical phonons in hexagonal MoS2. Phys. Rev. B 1971, 3, 4286-4292.
Ghosh, P. N.; Maiti, C. R. Interlayer force and Davydov splitting in 2H-MoS2. Phys. Rev. B 1983, 28, 2237-2239.
Böker, T.; Severin, R.; Müller, A.; Janowitz, C.; Manzke, R.; Voβ, D.; Krüger, P.; Mazur, A.; Pollmann, J. Band structure of MoS2, MoSe2, and α-MoTe2: Angle-resolved photoelectron spectroscopy and ab initio calculations. Phys. Rev. B 2001, 64, 235305.
Sugai, S.; Ueda, T. High-pressure Raman-spectroscopy in the layered materials 2H-MoS2, 2H-MoSe2 and 2H-MoTe2. Phys. Rev. B 1982, 26, 6554-6558.
Sekine, T.; Nakashizu, T.; Toyoda, K.; Uchinokura, K.; Matsuura, E. Raman scattering in layered compound 2H-WS2. Solid State Commun. 1980, 35, 371-373.
Sourisseau, C.; Cruege, F.; Fouassier, M.; Alba, M. Second- order Raman effects, inelastic neutron-scattering and lattice- dynamics in 2H-WS2. Chem. Phys. 1991, 150, 281-293.
Chen, J. M.; Wang, C. S. Second-order Raman-spectrum of MoS2. Solid State Commun. 1974, 14, 857-860.
Frey, G. L.; Tenne, R.; Matthews, M. J.; Dresselhaus, M. S.; Dresselhaus, G. Raman and resonance Raman investigation of MoS2 nanoparticles. Phys. Rev. B 1999, 60, 2883-2892.
Frey, G. L.; Tenne, R.; Matthews, M. J.; Dresselhaus, M. S.; Dresselhaus, G. Optical properties of MS2 (M = Mo, W) inorganic fullerenelike and nanotube material optical absorption and resonance Raman measurements. J. Mater. Res. 1998, 13, 2412-2417.
Viršek, M.; Jesih, A.; Milošević, I.; Damnjanović, M.; Remškar, M. Raman scattering of the MoS2 and WS2 single nanotubes. Surf. Sci. 2007, 601, 2868-2872.
Sandoval, S. J.; Yang, D.; Frindt, R. F.; Irwin, J. C. Raman- study and lattice-dynamics of single molecular layers of MoS2. Phys. Rev. B 1991, 44, 3955-3962.
Akahama, Y.; Kobayashi, M.; Kawamura, H. Raman study of black phosphorus up to 13 GPa. Solid State Commun. 1997, 104, 311-315.
Vanderborgh, C. A.; Schiferl, D. Raman studies of black phosphorus from 0.25 to 7.7 Gpa at 15 k. Phys. Rev. B 1989, 40, 9595-9599.
Sugai, S.; Ueda, T.; Murase, K. Pressure dependence of the lattice vibration in the orthorhombic and rhombohedral structures of black phosphorus. J. Phys. Soc. Jpn. 1981, 50, 3356-3361.
Kaneta, C.; Katayama-Yoshida, H.; Morita, A. Lattice dynamics of black phosphorus. Solid State Commun. 1982, 44, 613-617.
Sugai, S.; Shirotani, I. Raman and infrared reflection spectroscopy in black phosphorus. Solid State Commun. 1985, 53, 753-755.
Wagner, V.; Dolling, G.; Powell, B. M.; Landwehr, G. Lattice vibrations of Bi2Te3. Phys. Status Solidi B 1978, 85, 311-317.
Kullmann, W.; Geurts, J.; Richter, W.; Lehner, N.; Rauh, H.; Steigenberger, U.; Eichhorn, G.; Geick, R. Effect of hydrostatic and uniaxial pressure on structural properties and Raman active lattice vibrations in Bi2Te3. Phys. Status Solidi B 1984, 125, 131-138.
Rauh, H.; Geick, R.; Kohler, H.; Nucker, N.; Lehner, N. Generalized phonon density of states of the layer compounds Bi2Se3, Bi2Te3, Sb2Te3 and Bi2(Te0.5Se0.5)3, (Bi0.5Sb0.5)2Te3. J. Phys. C 1981, 14, 2705-2712.
Richter, W.; Becker, C. R. A Raman and far-infrared investigation of phonons in the rhombohedral V2-VI3 compounds Bi2Te3, Bi2Se3, Sb2Te3 and Bi2(Te1-xSex)3 (0 < x < 1), (Bi1-ySby)2Te3 (0 < y < 1). Phys. Status Solidi B 1977, 84, 619-628.
Michel, K. H.; Verberck, B. Theory of rigid-plane phonon modes in layered crystals. Phys. Rev. B 2012, 85, 094303.
Luo, X.; Zhao, Y. Y.; Zhang, J.; Toh, M.; Kloc, C.; Xiong, Q. H.; Quek, S. Y. Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe2. Phys. Rev. B 2013, 88, 195313.
Verble, J. L.; Wietling, T. J.; Reed, P. R. Rigid-layer lattice vibrations and van der waals bonding in hexagonal MoS2. Solid State Commun. 1972, 11, 941-944.
Sekine, T.; Izumi, M.; Nakashizu, T.; Uchinokura, K.; Matsuura, E. Raman-scattering and Infrared reflectance in 2H-MoSe2. J. Phys. Soc. Jpn. 1980, 49, 1069-1077.
Mead, D. G.; Irwin, J. C. Long wavelength optic phonons in WSe2. Can. J. Phys. 1977, 55, 379-382.
Saha, S. K.; Waghmare, U. V.; Krishnamurthy, H. R.; Sood, A. K. Phonons in few-layer graphene and interplanar interaction: A first-principles study. Phys. Rev. B 2008, 78, 165421.
Tan, P. H.; Han, W. P.; Zhao, W. J.; Wu, Z. H.; Chang, K.; Wang, H.; Wang, Y. F.; Bonini, N.; Marzari, N.; Pugno, N. et al. The shear mode of multilayer graphene. Nat. Mater. 2012, 11, 294-300.
Zhang, X.; Han, W. P.; Wu, J. B.; Milana, S.; Lu, Y.; Li, Q. Q.; Ferrari, A. C.; Tan, P. H. Raman spectroscopy of shear and layer breathing modes in multilayer MoS2. Phys. Rev. B 2013, 87, 115413.
Zeng, H. L.; Zhu, B. R.; Liu, K.; Fan, J. H.; Cui, X. D.; Zhang, Q. M. Low-frequency Raman modes and electronic excitations in atomically thin MoS2 films. Phys. Rev. B 2012, 86, 241301(R).
Plechinger, G.; Heydrich, S.; Eroms, J.; Weiss, D.; Schüller, C.; Korn, T. Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes. Appl. Phys. Lett. 2012, 101, 101906.
Lui, C. H.; Heinz, T. F. Measurement of layer breathing mode vibrations in few-layer graphene. Phys. Rev. B 2013, 87, 121404(R).
Lui, C. H.; Ye, Z. P.; Keiser, C.; Xiao, X.; He, R. Temperature-activated layer-breathing vibrations in few-layer graphene. Nano Lett. 2014, 14, 4615-4621.
Richter, H.; Wang, Z. P.; Ley, L. The one phonon Raman spectrum in microcrystalline silicon. Solid State Commun. 1981, 39, 625-629.
Sun, Q. -C.; Mazumdar, D.; Yadgarov, L.; Rosentsveig, R.; Tenne, R.; Musfeldt, J. L. Spectroscopic determination of phonon lifetimes in rhenium-doped MoS2 nanoparticles. Nano Lett. 2013, 13, 2803-2808.
Yan, Y.; Zhou, X.; Jin, H.; Li, C. -Z.; Ke, X. X.; Van Tendeloo, G.; Liu, K. H.; Yu, D. P.; Dressel, M.; Liao, Z. -M. Surface-facet-dependent phonon deformation potential in individual strained topological insulator Bi2Se3 nanoribbons. ACS Nano 2015, 9, 10244-10251.
Wang, C. X.; Zhu, X. G.; Nilsson, L.; Wen, J.; Wang, G.; Shan, X. Y.; Zhang, Q.; Zhang, S. L.; Jia, J. F.; Xue, Q. K. In situ Raman spectroscopy of topological insulator Bi2Te3 films with varying thickness. Nano Res. 2013, 6, 688-692.
Zhang, J.; Peng, Z. P.; Soni, A.; Zhao, Y. Y.; Xiong, Y.; Peng, B.; Wang, J. B.; Dresselhaus, M. S.; Xiong, Q. H. Raman spectroscopy of few-quintuple layer topological insulator Bi2Se3 nanoplatelets. Nano Lett. 2011, 11, 2407- 2414.
Mignuzzi, S.; Pollard, A. J.; Bonini, N.; Brennan, B.; Gilmore, I. S.; Pimenta, M. A.; Richards, D.; Roy, D. Effect of disorder on Raman scattering of single-layer MoS2. Phys. Rev. B 2015, 91, 195411.
Shi, W.; Lin, M. -L.; Tan, Q. -H.; Qiao, X. -F.; Zhang, J.; Tan, P. -H. Raman and photoluminescence spectra of two-dimensional nanocrystallites of monolayer WS2 and WSe2. 2D Mater. 2016, 3, 025016.
Wu, J. -B.; Zhao, H.; Li, Y. R.; Ohlberg, D.; Shi, W.; Wu, W.; Wang, H.; Tan, P. -H. Monolayer molybdenum disulfide nanoribbons with high optical anisotropy. Adv. Opt. Mater. 2016, 4, 756-762.
Molina-Sánchez, A.; Wirtz, L. Phonons in single-layer and few-layer MoS2 and WS2. Phys. Rev. B 2011, 84, 155413.
Campbell, I. H.; Fauchet, P. M. The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductors. Solid State Commun. 1986, 58, 739-741.
Khoo, K. H.; Zayak, A. T.; Kwak, H.; Chelikowsky, J. R. First-principles study of confinement effects on the raman spectra of Si nanocrystals. Phys. Rev. Lett. 2010, 105, 115504.
Lu, W. L.; Nan, H. Y.; Hong, J. H.; Chen, Y. M.; Zhu, C.; Liang, Z.; Ma, X. Y.; Ni, Z. H.; Jin, C. H.; Zhang, Z. Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization. Nano Res. 2014, 7, 853-859.
Castellanos-Gomez, A.; Vicarelli, L.; Prada, E.; Island, J. O.; Narasimha-Acharya, K. L.; Blanter, S. I.; Groenendijk, D. J.; Buscema, M.; Steele, G. A.; Alvarez, J. V. et al. Isolation and characterization of few-layer black phosphorus. 2D Mater. 2014, 1, 025001.
Tonndorf, P.; Schmidt, R.; Böttger, P.; Zhang, X.; Börner, J.; Liebig, A.; Albrecht, M.; Kloc, C.; Gordan, O.; Zahn, D. R. T. et al. Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Opt. Express 2013, 21, 4908-4916.
Lee, C.; Yan, H. G.; Brus, L. E.; Heinz, T. F.; Hone, J.; Ryu, S. Anomalous lattice vibrations of single- and few- layer MoS2. ACS Nano 2010, 4, 2695-2700.
Zhao, W. J.; Ghorannevis, Z.; Amara, K. K.; Pang, J. R.; Toh, M.; Zhang, X.; Kloc, C.; Tan, P. H.; Eda, G. Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2. Nanoscale 2013, 5, 9677-9683.
Ling, X.; Liang, L. B.; Huang, S. X.; Puretzky, A. A.; Geohegan, D. B.; Sumpter, B. G.; Kong, J.; Meunier, V.; Dresselhaus, M. S. Low-frequency interlayer breathing modes in few-layer black phosphorus. Nano Lett. 2015, 15, 4080-4088.
Dong, S.; Zhang, A. M.; Liu, K.; Ji, J. T.; Ye, Y. G.; Luo, X. G.; Chen, X. H.; Ma, X. L.; Jie, Y. H.; Chen, C. F. et al. Ultralow-frequency collective compression mode and strong interlayer coupling in multilayer black phosphorus. Phys. Rev. Lett. 2016, 116, 087401.
Zhao, Y. Y.; Luo, X.; Zhang, J.; Wu, J. X.; Bai, X. X.; Wang, M. X.; Jia, J. F.; Peng, H. L.; Liu, Z. F.; Quek, S. Y. et al. Interlayer vibrational modes in few-quintuple-layer Bi2Te3 and Bi2Se3 two-dimensional crystals: Raman spectroscopy and first-principles studies. Phys. Rev. B 2014, 90, 245428.
Chakraborty, B.; Bera, A.; Muthu, D. V. S.; Bhowmick, S.; Waghmare, U. V.; Sood, A. K. Symmetry-dependent phonon renormalization in monolayer MoS2 transistor. Phys. Rev. B 2012, 85, 161403(R).
Lazzeri, M.; Piscanec, S.; Mauri, F.; Ferrari, A. C.; Robertson, J. Phonon linewidths and electron-phonon coupling in graphite and nanotubes. Phys. Rev. B 2006, 73, 155426.
Bonini, N.; Lazzeri, M.; Marzari, N.; Mauri, F. Phonon anharmonicities in graphite and graphene. Phys. Rev. Lett. 2007, 99, 176802.
LaForge, A. D.; Frenzel, A.; Pursley, B. C.; Lin, T.; Liu, X. F.; Shi, J.; Basov, D. N. Optical characterization of Bi2Se3 in a magnetic field: Infrared evidence for magnetoelectric coupling in a topological insulator material. Phys. Rev. B 2010, 81, 125120.
Di Pietro, P.; Ortolani, M.; Limaj, O.; Di Gaspare, A.; Giliberti, V.; Giorgianni, F.; Brahlek, M.; Bansal, N.; Koirala, N.; Oh, S. et al. Observation of Dirac plasmons in a topological insulator. Nat. Nanotechnol. 2013, 8, 556-560.
Chen, C. Y.; Xie, Z. J.; Feng, Y.; Yi, H. M.; Liang, A. J.; He, S. L.; Mou, D. X.; He, J. F.; Peng, Y. Y.; Liu, X. et al. Tunable dirac fermion dynamics in topological insulators. Sci. Rep. 2013, 3, 2411.
Costache, M. V.; Neumann, I.; Sierra, J. F.; Marinova, V.; Gospodinov, M. M.; Roche, S.; Valenzuela, S. O. Fingerprints of inelastic transport at the surface of the topological insulator Bi2Se3: Role of electron-phonon coupling. Phys. Rev. Lett. 2014, 112, 086601.
Boukhicha, M.; Calandra, M.; Measson, M. -A.; Lancry, O.; Shukla, A. Anharmonic phonons in few-layer MoS2: Raman spectroscopy of ultralow energy compression and shear modes. Phys. Rev. B 2013, 87, 195316.
Ji, J. T.; Zhang, A. M.; Fan, J. H.; Li, Y. S.; Wang, X. Q.; Zhang, J. D.; Plummer, E. W.; Zhang, Q. M. Giant magneto-optical Raman effect in a layered transition metal compound. Proc. Natl. Acad. Sci. USA 2016, 113, 2349- 2353.
Ling, X.; Huang, S. X.; Hasdeo, E. H.; Liang, L. B.; Parkin, W. M.; Tatsumi, Y.; Nugraha, A. R. T.; Puretzky, A. A.; Das, P. M.; Sumpter, B. G. et al. Anisotropic electron-photon and electron-phonon interactions in black phosphorus. Nano Lett. 2016, 16, 2260-2267.
Li, H.; Zhang, Q.; Yap, C. C. R.; Tay, B. K.; Edwin, T. H. T.; Olivier, A.; Baillargeat, D. From bulk to monolayer MoS2: Evolution of Raman scattering. Adv. Funct. Mater. 2012, 22, 1385-1390.
Chen, S. -Y.; Zheng, C. X.; Fuhrer, M. S.; Yan, J. Helicity-resolved Raman scattering of MoS2, MoSe2, WS2, and WSe2 atomic layers. Nano Lett. 2015, 15, 2526-2532.
Tongay, S.; Zhou, J.; Ataca, C.; Lo, K.; Matthews, T. S.; Li, J. B.; Grossman, J. C.; Wu, J. Q. Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2. Nano Lett. 2012, 12, 5576-5580.
Lu, X.; Utama, M. I. B.; Lin, J. H.; Luo, X.; Zhao, Y. Y.; Zhang, J.; Pantelides, S. T.; Zhou, W.; Quek, S. Y.; Xiong, Q. H. Rapid and nondestructive identification of polytypism and stacking sequences in few-layer molybdenum diselenide by Raman spectroscopy. Adv. Mater. 2015, 27, 4502-4508.
Ruppert, C.; Aslan, O. B.; Heinz, T. F. Optical properties and band gap of single- and few-layer MoTe2 crystals. Nano Lett. 2014, 14, 6231-6236.
Yamamoto, M.; Wang, S. T.; Ni, M. Y.; Lin, Y. F.; Li, S. L.; Aikawa, S.; Jian, W. B.; Ueno, K.; Wakabayashi, K.; Tsukagoshi, K. Strong enhancement of raman scattering from a bulk-inactive vibrational mode in few-layer MoTe2. ACS Nano 2014, 8, 3895-3903.
Li, H.; Lu, G.; Wang, Y. L.; Yin, Z. Y.; Cong, C. X.; He, Q. Y.; Wang, L.; Ding, F.; Yu, T.; Zhang, H. Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe2, TaS2, and TaSe2. Small 2013, 9, 1974-1981.
Terrones, H.; Del Corro, E.; Feng, S.; Poumirol, J. M.; Rhodes, D.; Smirnov, D.; Pradhan, N. R.; Lin, Z.; Nguyen, M. A. T.; Elias, A. L. et al. New first order raman-active modes in few layered transition metal dichalcogenides. Sci. Rep. 2014, 4, 4215.
Huang, J. -K.; Pu, J.; Hsu, C. -L.; Chiu, M. -H.; Juang, Z. -Y.; Chang, Y. -H.; Chang, W. -H.; Iwasa, Y.; Takenobu, T.; Li, L. -J. Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS Nano 2014, 8, 923-930.
Mrstik, B. J.; Kaplan, R.; Reinecke, T. L.; Van Hove, M.; Tong, S. Y. Surface-structure determination of the layered compounds MoS2 and NbSe2 by low-energy electron diffraction. Phys. Rev. B 1977, 15, 897-900.
Liu, K. K.; Zhang, W. J.; Lee, Y. H.; Lin, Y. C.; Chang, M. T.; Su, C. Y.; Chang, C. S.; Li, H.; Shi, Y. M.; Zhang, H. et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 2012, 12, 1538-1544.
Castellanos-Gomez, A.; Barkelid, M.; Goossens, A. M.; Calado, V. E.; van der Zant, H. S. J.; Steele, G. A. Laser- thinning of MoS2: On demand generation of a single-layer semiconductor. Nano Lett. 2012, 12, 3187-3192.
Lu, X.; Utama, M. I. B.; Zhang, J.; Zhao, Y. Y.; Xiong, Q. H. Layer-by-layer thinning of MoS2 by thermal annealing. Nanoscale 2013, 5, 8904-8908.
Lin, Y. X.; Ling, X.; Yu, L. L.; Huang, S. X.; Hsu, A. L.; Lee, Y. H.; Kong, J.; Dressehaus, M. S.; Palacios, T. Dielectric screening of excitons and trions in single-layer MoS2. Nano Lett. 2014, 14, 5569-5576.
Froehlicher, G.; Lorchat, E.; Fernique, F.; Joshi, C.; Molina-Sánchez, A.; Wirtz, L.; Berciaud, S. Unified description of the optical phonon modes in N-layer MoTe2. Nano Lett. 2015, 15, 6481-6489.
Kim, Y.; Jhon, Y. I.; Park, J.; Kim, J. H.; Lee, S.; Jhon, Y. M. Anomalous Raman scattering and lattice dynamics in mono- and few-layer WTe2. Nanoscale 2016, 8, 2309-2316.
Shulenburger, L.; Baczewski, A. D.; Zhu, Z.; Guan, J.; Tománek, D. The nature of the interlayer interaction in bulk and few-layer phosphorus. Nano Lett. 2015, 15, 8170-8175.
Luo, N. S.; Ruggerone, P.; Toennies, J. P. Theory of surface vibrations in epitaxial thin films. Phys. Rev. B 1996, 54, 5051-5063.
Zhao, Y. Y.; de la Mata, M.; Qiu, R. L. J.; Zhang, J.; Wen, X. L.; Magen, C.; Gao, X. P. A.; Arbiol, J.; Xiong, Q. H. Te-seeded growth of few-quintuple layer Bi2Te3 nanoplates. Nano Res. 2014, 7, 1243-1253.
Buscema, M.; Steele, G. A.; van der Zant, H. S. J.; Castellanos-Gomez, A. The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2. Nano Res. 2014, 7, 561-571.
Lui, C. H.; Ye, Z. P.; Ji, C.; Chiu, K. -C.; Chou, C. -T.; Andersen, T. I.; Means-Shively, C.; Anderson, H.; Wu, J. -M.; Kidd, T. et al. Observation of interlayer phonon modes in van der Waals heterostructures. Phys. Rev. B 2015, 91, 165403.
Wang, H.; Feng, M.; Zhang, X.; Tan, P. -H.; Wang, Y. F. In-phase family and self-similarity of interlayer vibrational frequencies in van der Waals layered materials. J. Phys. Chem. C 2015, 119, 6906-6911.
Wu, J. -B.; Hu, Z. -X.; Zhang, X.; Han, W. -P.; Lu, Y.; Shi, W.; Qiao, X. -F.; Ijiäs, M.; Milana, S.; Ji, W. et al. Interface coupling in twisted multilayer graphene by resonant raman spectroscopy of layer breathing modes. ACS Nano 2015, 9, 7440-7449.
Li, Y. L.; Rao, Y.; Mak, K. F.; You, Y. M.; Wang, S. Y.; Dean, C. R.; Heinz, T. F. Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation. Nano Lett. 2013, 13, 3329-3333.
Kappera, R.; Voiry, D.; Yalcin, S. E.; Branch, B.; Gupta, G.; Mohite, A. D.; Chhowalla, M. Phase-engineered low- resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 2014, 13, 1128-1134.
He, J. G.; Hummer, K.; Franchini, C. Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides MoS2, MoSe2, WS2, and WSe2. Phys. Rev. B 2014, 89, 075409.
Huang, S. X.; Ling, X.; Liang, L. B.; Kong, J.; Terrones, H.; Meunier, V.; Dresselhaus, M. S. Probing the interlayer coupling of twisted bilayer MoS2 using photoluminescence spectroscopy. Nano Lett. 2014, 14, 5500-5508.
Jiang, T.; Liu, H. R.; Huang, D.; Zhang, S.; Li, Y. G.; Gong, X.; Shen, Y. -R.; Liu, W. -T.; Wu, S. W. Valley and band structure engineering of folded MoS2 bilayers. Nat. Nanotechnol. 2014, 9, 825-829.
Zhang, L. M.; Liu, K. H.; Wong, A. B.; Kim, J.; Hong, X. P.; Liu, C.; Cao, T.; Louie, S. G.; Wang, F.; Yang, P. D. Three-dimensional spirals of atomic layered MoS2. Nano Lett. 2014, 14, 6418-6423.
Plechinger, G.; Mooshammer, F.; Castellanos-Gomez, A.; Steele, G. A.; Schüller, C.; Korn, T. Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers. 2D Mater. 2015, 2, 034016.
Fang, H.; Battaglia, C.; Carraro, C.; Nemsak, S.; Ozdol, B.; Kang, J. S.; Bechtel, H. A.; Desai, S. B.; Kronast, F.; Unal, A. A. et al. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. Proc. Natl. Acad. Sci. USA 2014, 111, 6198-6202.
Zhang, J.; Wang, J. H.; Chen, P.; Sun, Y.; Wu, S.; Jia, Z. Y.; Lu, X. B.; Yu, H.; Chen, W.; Zhu, J. Q. et al. Observation of strong interlayer coupling in MoS2/WS2 heterostructures. Adv. Mater. 2016, 28, 1950-1956.
Puretzky, A. A.; Liang, L. B.; Li, X. F.; Xiao, K.; Wang, K.; Mahjouri-Samani, M.; Basile, L.; Idrobo, J. C.; Sumpter, B. G.; Meunier, V. et al. Low-frequency raman fingerprints of two-dimensional metal dichalcogenide layer stacking configurations. ACS Nano 2015, 9, 6333-6342.
Yan, J. X.; Xia, J.; Wang, X. L.; Liu, L.; Kuo, J. -L.; Tay, B. K.; Chen, S. S.; Zhou, W.; Liu, Z.; Shen, Z. X. Stacking-dependent interlayer coupling in trilayer MoS2 with broken inversion symmetry. Nano Lett. 2015, 15, 8155-8161.
Puretzky, A. A.; Liang, L. B.; Li, X. F.; Xiao, K.; Sumpter, B. G.; Meunier, V.; Geohegan, D. B. Twisted MoSe2 bilayers with variable local stacking and interlayer coupling revealed by low-frequency raman spectroscopy. ACS Nano 2016, 10, 2736-2744.
Huang, S. X.; Liang, L. B.; Ling, X.; Puretzky, A. A.; Geohegan, D. B.; Sumpter, B. G.; Kong, J.; Meunier, V.; Dresselhaul, M. S. Low-frequency interlayer Raman modes to probe interface of twisted bilayer MoS2. Nano Lett. 2016, 16, 1435-1444.
Luo, X.; Lu, X.; Cong, C. X.; Yu, T.; Xiong, Q. H.; Quek, S. Y. Stacking sequence determines Raman intensities of observed interlayer shear modes in 2D layered materials—A general bond polarizability model. Sci. Rep. 2015, 5, 14565.
Guha, S.; Menéndez, J.; Page, J. B.; Adams, G. B. Empirical bond polarizability model for fullerenes. Phys. Rev. B 1996, 53, 13106-13114.
Utama, M. I. B.; Lu, X.; Yuan, Y. W.; Xiong, Q. H. Detrimental influence of catalyst seeding on the device properties of CVD-grown 2D layered materials: A case study on MoSe2. Appl. Phys. Lett. 2014, 105, 253102.
Lui, C. H.; Ye, Z. P.; Keiser, C.; Barros, E. B.; He, R. Stacking-dependent shear modes in trilayer graphene. Appl. Phys. Lett. 2015, 106, 041904
Zhang, X.; Han, W. -P.; Qiao, X. -F.; Tan, Q. -H.; Wang, Y. -F.; Zhang, J.; Tan, P. -H. Raman characterization of AB- and ABC-stacked few-layer graphene by interlayer shear modes. Carbon 2016, 99, 118-122.
Lee, J. -U.; Kim, K.; Han, S.; Ryu, G. H.; Lee, Z.; Cheong, H. Raman signatures of polytypism in molybdenum disulfide. ACS Nano 2016, 10, 1948-1953.
He, R.; Yan, J. -A.; Yin, Z. Y.; Ye, Z. P.; Ye, G. H.; Cheng, J.; Li, J.; Lui, C. H. Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy. Nano Lett. 2016, 16, 1404-1409.
Qiao, X. -F.; Wu, J. -B.; Zhou, L. W.; Qiao, J. S.; Shi, W.; Chen, T.; Zhang, X.; Zhang, J.; Ji, W.; Tan, P. -H. Polytypism and unexpected strong interlayer coupling in two-dimensional layered ReS2. Nanoscale 2016, 8, 8324-8332.
Chenet, D. A.; Aslan, O. B.; Huang, P. Y.; Fan, C.; van der Zande, A. M.; Heinz, T. F.; Hone, J. C. In-plane anisotropy in mono- and few-layer ReS2 probed by raman spectroscopy and scanning transmission electron microscopy. Nano Lett. 2015, 15, 5667-5672.
Wolverson, D.; Crampin, S.; Kazemi, A. S.; Ilie, A.; Bending, S. J. Raman spectra of monolayer, few-layer, and bulk ReSe2: An anisotropic layered semiconductor. ACS Nano 2014, 8, 11154-11164.
Zhao, H.; Wu, J. B.; Zhong, H. X.; Guo, Q. S.; Wang, X. M.; Xia, F. N.; Yang, L.; Tan, P. H.; Wang, H. Interlayer interactions in anisotropic atomically thin rhenium diselenide. Nano Res. 2015, 8, 3651-3661.
Ribeiro, H. B.; Pimenta, M. A.; de Matos, C. J. S.; Moreira, R. L.; Rodin, A. S.; Zapata, J. D.; de Souza, E. A. T.; Castro Neto, A. H. Unusual angular dependence of the raman response in black phosphorus. ACS Nano 2015, 9, 4270-4276.
Cai, Y. Q.; Ke, Q. Q.; Zhang, G.; Feng, Y. P.; Shenoy, V. B.; Zhang, Y. -W. Giant phononic anisotropy and unusual anharmonicity of phosphorene: Interlayer coupling and strain engineering. Adv. Funct. Mater. 2015, 25, 2230-2236.
Wu, J. X.; Mao, N. N.; Xie, L. M.; Xu, H.; Zhang, J. Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy. Angew. Chem., Int. Ed. 2015, 54, 2366-2369.
Zhu, B. R.; Zeng, H. L.; Dai, J. F.; Gong, Z. R.; Cui, X. D. Anomalously robust valley polarization and valley coherence in bilayer WS2. Proc. Natl. Acad. Sci. USA 2014, 111, 11606-11611.
Jones, A. M.; Yu, H. Y.; Ghimire, N. J.; Wu, S. F.; Aivazian, G.; Ross, J. S.; Zhao, B.; Yan, J. Q.; Mandrus, D. G.; Xiao, D. et al. Optical generation of excitonic valley coherence in monolayer WSe2. Nat. Nanotechnol. 2013, 8, 634-638.
Efremov, E. V.; Ariese, F.; Gooijer, C. Achievements in resonance Raman spectroscopy: Review of a technique with a distinct analytical chemistry potential. Anal. Chim. Acta 2008, 606, 119-134.
Fan, J. -H.; Gao, P.; Zhang, A. -M.; Zhu, B. -R.; Zeng, H. -L.; Cui, X. -D.; He, R.; Zhang, Q. -M. Resonance Raman scattering in bulk 2H-MX2 (M = Mo, W; X = S, Se) and monolayer MoS2. J. Appl. Phys. 2014, 115, 053527.
Cong, C. X.; Shang, J. Z.; Wu, X.; Cao, B. C.; Peimyoo, N.; Qiu, C. Y.; Sun, L. T.; Yu, T. Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition. Adv. Opt. Mater. 2014, 2, 131-136.
Chakraborty, B.; Matte, H. S. S. R.; Sood, A. K.; Rao, C. N. R. Layer-dependent resonant Raman scattering of a few layer MoS2. J. Raman Spectrosc. 2013, 44, 92-96.
Lee, J. -U.; Park, J.; Son, Y. -W.; Cheong, H. Anomalous excitonic resonance Raman effects in few-layered MoS2. Nanoscale 2015, 7, 3229-3236.
Staiger, M.; Gillen, R.; Scheuschner, N.; Ochedowski, O.; Kampmann, F.; Schleberger, M.; Thomsen, C.; Maultzsch, J. Splitting of monolayer out-of-plane A1' Raman mode in few-layer WS2. Phys. Rev. B 2015, 91, 195419.
Schuller, J. A.; Karaveli, S.; Schiros, T.; He, K. L.; Yang, S. Y.; Kymissis, I.; Shan, J.; Zia, R. Orientation of luminescent excitons in layered nanomaterials. Nat. Nanotechnol. 2013, 8, 271-276.
Molina-Sánchez, A.; Sangalli, D.; Hummer, K.; Marini, A.; Wirtz, L. Effect of spin-orbit interaction on the optical spectra of single-layer, double-layer, and bulk MoS2. Phys. Rev. B 2013, 88, 045412.
Carvalho, B. R.; Malard, L. M.; Alves, J. M.; Fantini, C.; Pimenta, M. A. Symmetry-dependent exciton-phonon coupling in 2D and bulk MoS2 observed by resonance Raman scattering. Phys. Rev. Lett. 2015, 114, 136403.
Nam, D.; Lee, J. -U.; Cheong, H. Excitation energy dependent Raman spectrum of MoSe2. Sci. Rep. 2015, 5, 17113.
Scheuschner, N.; Gillen, R.; Staiger, M.; Maultzsch, J. Interlayer resonant Raman modes in few-layer MoS2. Phys. Rev. B 2015, 91, 235409.
del Corro, E.; Terrones, H.; Elias, A.; Fantini, C.; Feng, S. M.; Nguyen, M. A.; Mallouk, T. E.; Terrones, M.; Pimenta, M. A. Excited excitonic states in 1 L, 2 L, 3 L, and bulk WSe2 observed by resonant Raman spectroscopy. ACS Nano 2014, 8, 9629-9635.
del Corro, E.; Botello-Méndez, A.; Gillet, Y.; Elias, A. L.; Terrones, H.; Feng, S.; Fantini, C.; Rhodes, D.; Pradhan, N.; Balicas, L. et al. Atypical exciton-phonon interactions in WS2 and WSe2 monolayers revealed by resonance Raman spectroscopy. Nano Lett. 2016, 16, 2363-2368.
Song, Q. J.; Tan, Q. H.; Zhang, X.; Wu, J. B.; Sheng, B. W.; Wan, Y.; Wang, X. Q.; Dai, L.; Tan, P. H. Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2. Phys. Rev. B 2016, 93, 115409.
Ferrari, A. C.; Meyer, J. C.; Scardaci, V.; Casiraghi, C.; Lazzeri, M.; Mauri, F.; Piscanec, S.; Jiang, D.; Novoselov, K. S.; Roth, S. et al. Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 2006, 97, 187401.
Dresselhaus, M. S.; Jorio, A.; Hofmann, M.; Dresselhaus, G.; Saito, R. Perspectives on carbon nanotubes and graphene Raman spectroscopy. Nano Lett. 2010, 10, 751-758.
Venezuela, P.; Lazzeri, M.; Mauri, F. Theory of double- resonant Raman spectra in graphene: Intensity and line shape of defect-induced and two-phonon bands. Phys. Rev. B 2011, 84, 035433.
Wang, G.; Glazov, M. M.; Robert, C.; Amand, T.; Marie, X.; Urbaszek, B. Double resonant Raman scattering and valley coherence generation in monolayer WSe2. Phys. Rev. Lett. 2015, 115, 117401.
Sun, L. F.; Yan, J. X.; Zhan, D.; Liu, L.; Hu, H. L.; Li, H.; Tay, B. K.; Kuo, J. -L.; Huang, C. -C.; Hewak, D. W. et al. Spin-orbit splitting in single-layer MoS2 revealed by triply resonant Raman scattering. Phys. Rev. Lett. 2013, 111, 126801.
Lanzillo, N. A.; Birdwell, A. G.; Amani, M.; Crowne, F. J.; Shah, P. B.; Najmaei, S.; Liu, Z.; Ajayan, P. M.; Lou, J.; Dubey, M. et al. Temperature-dependent phonon shifts in monolayer MoS2. Appl. Phys. Lett. 2013, 103, 093102.
Thripuranthaka, M.; Late, D. J. Temperature dependent phonon shifts in single-layer WS2. ACS Appl. Mater. Interfaces 2014, 6, 1158-1163.
Late, D. J. Temperature dependent phonon shifts in few- layer black phosphorus. ACS Appl. Mater. Interfaces 2015, 7, 5857-5862.
Peimyoo, N.; Shang, J. Z.; Yang, W. H.; Wang, Y. L.; Cong, C. X.; Yu, T. Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy. Nano Res. 2015, 8, 1210-1221.
Chi, Z. -H.; Zhao, X. -M.; Zhang, H. D.; Goncharov, A. F.; Lobanov, S. S.; Kagayama, T.; Sakata, M.; Chen, X. -J. Pressure-induced metallization of molybdenum disulfide. Phys. Rev. Lett. 2014, 113, 036802.
Fan, W.; Zhu, X.; Ke, F.; Chen, Y. B.; Dong, K. C.; Ji, J.; Chen, B.; Tongay, S.; Ager, J. W.; Liu, K. et al. Vibrational spectrum renormalization by enforced coupling across the van der Waals gap between MoS2 and WS2 monolayers. Phys. Rev. B 2015, 92, 241408(R).
Chang, C. -H.; Fan, X. F.; Lin, S. -H.; Kuo, J. -L. Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2 monolayers under strain. Phys. Rev. B 2013, 88, 195420.
Zhu, C. R.; Wang, G.; Liu, B. L.; Marie, X.; Qiao, X. F.; Zhang, X.; Wu, X. X.; Fan, H.; Tan, P. H.; Amand, T. et al. Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2. Phys. Rev. B 2013, 88, 121301(R).
Wang, Y. L.; Cong, C. X.; Qiu, C. Y.; Yu, T. Raman spectroscopy study of lattice vibration and crystallographic orientation of monolayer MoS2 under uniaxial strain. Small 2013, 9, 2857-2861.
Wang, Y. L.; Cong, C. X.; Yang, W. H.; Shang, J. Z.; Peimyoo, N.; Chen, Y.; Kang, J. Y.; Wang, J. P.; Huang, W.; Yu, T. Strain-induced direct-indirect bandgap transition and phonon modulation in monolayer WS2. Nano Res. 2015, 8, 2562-2572.
Das, A.; Pisana, S.; Chakraborty, B.; Piscanec, S.; Saha, S. K.; Waghmare, U. V.; Novoselov, K. S.; Krishnamurthy, H. R.; Geim, A. K.; Ferrari, A. C. et al. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat. Nanotechnol. 2008, 3, 210-215.
Das, A.; Sood, A. K.; Govindaraj, A.; Saitta, A. M.; Lazzeri, M.; Mauri, F.; Rao, C. N. R. Doping in carbon nanotubes probed by Raman and transport measurements. Phys. Rev. Lett. 2007, 99, 136803.
Chakraborty, B.; Gupta, S. N.; Singh, A.; Kuiri, M.; Kumar, C.; Muthu, D. V. S.; Das, A.; Waghmare, U. V.; Sood, A. K. Electron-hole asymmetry in the electron- phonon coupling in top-gated phosphorene transistor. 2D Mater. 2016, 3, 015008.
Withers, F.; Del Pozo-Zamudio, O.; Mishchenko, A.; Rooney, A. P.; Gholinia, A.; Watanabe, K.; Taniguchi, T.; Haigh, S. J.; Geim, A. K.; Tartakovskii, A. I. et al. Light- emitting diodes by band-structure engineering in van der Waals heterostructures. Nat. Mater. 2015, 14, 301-306.
