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Piezoelectric and deformation potential effects of strain-dependent luminescence in semiconductor quantum well structures
Abstract
The mechanism of strain-dependent luminescence is important for the rational design of pressure-sensing devices. The interband momentum-matrix element is the key quantity for understanding luminescent phenomena. We analytically solved an infinite quantum well (IQW) model with strain, in the framework of the 6 × 6 k∙p Hamiltonian for the valence states, to directly assess the interplay between the spin-orbit coupling and the strain-induced deformation potential for the interband momentum-matrix element. We numerically addressed problems of both the infinite and IQWs with piezoelectric fields to elucidate the effects of the piezoelectric potential and the deformation potential on the strain- dependent luminescence. The experimentally measured photoluminescence variation as a function of pressure can be qualitatively explained by the theoretical results.
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Pages 134-144
Cite this article:
Zhang A, Peng M, Willatzen M, et al. Piezoelectric and deformation potential effects of strain-dependent luminescence in semiconductor quantum well structures. Nano Research, 2017, 10(1): 134-144. https://doi.org/10.1007/s12274-016-1272-x
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