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Research Article

Capping CsPbBr3 with ZnO to improve performance and stability of perovskite memristors

Ye Wu1,§, Yi Wei1,§, Yong Huang1, Fei Cao1, Dejian Yu1, Xiaoming Li1,2( ), Haibo Zeng1,2( )
Institute of Optoelectronics & Nanomaterials, Herbert Gleiter Institute of Nanoscience, Jiangsu Key Laboratory of Advanced Micro & Nano Materials and Technology, College of Material Science and Engineering Nanjing University of Science and TechnologyNanjing 210094 China
State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Materials Science and Technology Nanjing University of Aeronautics and AstronauticsNanjing 210016 China

§ These authors contributed equally to this work.

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Abstract

The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption. Memristors are considered to be next-generation memory devices with all of the aforementioned advantages. Recently, organometallic halide perovskites were reported to be promising active materials for memristors, although they have poor stability and mediocre performance. Herein, we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite (CsPbBr3, CPB). The devices have electric field-induced bipolar resistive switching (ReS) and memory behaviors with a large on/off ratio (> 105), low working voltage (< 1 V) and energy consumption, long data retention (> 104 s), and high environmental stability, which are achieved via ZnO capping within the devices. Such a design can be adapted to various devices. Additionally, the heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 103 with a rapid response speed (< 1 ms), which enables us to tune the resistance state by changing the light and electric field simultaneously. Such multifunctional devices achieved by the combination of information storage and processing abilities have potential applications for future computing that transcends traditional architectures.

Keywords

inorganic perovskitebipolar resistive switchingnonvolatileZnO cappinglow power consumption

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Nano Research
Volume 10 Issue 5,
May 2017
Pages 1584-1594
DOI: 10.1007/s12274-016-1288-2
Cite this article:
Wu Y, Wei Y, Huang Y, et al. Capping CsPbBr3 with ZnO to improve performance and stability of perovskite memristors. Nano Research, 2017, 10(5): 1584-1594. https://doi.org/10.1007/s12274-016-1288-2
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Received: 20 July 2016
Revised: 07 September 2016
Accepted: 12 September 2016
Published: 17 October 2016
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016
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