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Research Article

Direct discrimination between semiconducting and metallic single-walled carbon nanotubes with high spatial resolution by SEM

Dongqi Li1Yang Wei1( )Jin Zhang1Jiangtao Wang1Yinghong Lin3Peng Liu1Shoushan Fan1,2Kaili Jiang1,2( )
State Key Laboratory of Low-Dimensional Quantum Physics Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center Tsinghua University Beijing 100084 China
Collaborative Innovation Center of Quantum Matter Beijing 100084 China
FEI Company, Building No. 8, No. 399 Shengxia Road, Pudong Shanghai 201210 China
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Graphical Abstract

Abstract

Single-walled carbon nanotube (SWCNT) films with a high density exhibit broad functionality and great potential in nanodevices, as SWCNTs can be either metallic or semiconducting in behavior. The films greatly benefit from characterization technologies that can efficiently identify and group SWCNTs based on metallic or semiconducting natures with high spatial resolution. Here, we developed a facile imaging technique using scanning electron microscopy (SEM) to discriminate between semiconducting and metallic SWCNTs based on black and white colors. The average width of the single-SWCNT image was reduced to ~9 nm, ~1/5 of previous imaging results. These achievements were attributed to reduced surface charging on the SiO2/Si substrate under enhanced accelerating voltages. With this identification technique, a CNT transistor with an on/off ratio of > 105 was fabricated by identifying and etching out the white metallic SWCNTs. This improved SEM imaging technique can be widely applied in evaluating the selective growth and sorting of SWCNTs.

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Nano Research
Pages 1896-1902
Cite this article:
Li D, Wei Y, Zhang J, et al. Direct discrimination between semiconducting and metallic single-walled carbon nanotubes with high spatial resolution by SEM. Nano Research, 2017, 10(6): 1896-1902. https://doi.org/10.1007/s12274-016-1372-7

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Received: 20 September 2016
Accepted: 15 November 2016
Published: 19 December 2016
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016
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