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Research Article

Atomic origin of the traps in memristive interface

Ye Tian1,2,5, Lida Pan3,4, Chuan Fei Guo6, Qian Liu1()
CAS Center of Excellence for Nanoscience CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology, No. 11 Beiyitiao, Zhongguancun Beijing 100190 China
School of Communication and Electronics Engineering Hunan City University Yiyang 413000 China
Department of Physics and Astronomy Vanderbilt University NashvilleTN 37235 USA
Institute of Physics Chinese Academy of Sciences Beijing 100190 China
Photonics Research Group Department of Information Technology Ghent University-IMECGhent B-9000 Belgium
Department of Materials Science and Engineering South University of Science and Technology of China Shenzhen 518055 China
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Abstract

In recent years, trap-related interfacial transport phenomena have received great attention owing to their potential applications in resistive switching devices and photo detectors. Not long ago, one new type of memristive interface that is composed of F-doped SnO2 and Bi2S3 nano-network layers has demonstrated a bivariate-continuous-tunable resistance with a swift response comparable to the one in neuron synapses and with a brain-like memorizing capability. However, the resistive mechanism is still not clearly understood because of lack of evidence, and the limited improvement in the development of the interfacial device. By combining I-V characterization, electron energy-loss spectroscopy, and first-principle calculation, we studied in detail the macro/micro features of the memristive interface using experimental and theoretical methods, and confirmed that its atomic origin is attributed to the traps induced by O-doping. This implies that impurity-doping might be an effective strategy for improving switching features and building new interfacial memristors.

Keywords

memristanceinterfacetrap statefirst principle calculation

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Nano Research
Volume 10 Issue 6,
June 2017
Pages 1924-1931
DOI: 10.1007/s12274-016-1376-3
Cite this article:
Tian Y, Pan L, Guo CF, et al. Atomic origin of the traps in memristive interface. Nano Research, 2017, 10(6): 1924-1931. https://doi.org/10.1007/s12274-016-1376-3
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