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Research Article

Significantly enhanced optoelectronic performance of tungsten diselenide phototransistor via surface functionalization

Bo Lei1,2,§, Zehua Hu1,2,§, Du Xiang2,3, Junyong Wang1,2, Goki Eda1,2,3, Cheng Han2,3,4( ), Wei Chen1,2,3,4,5( )
Department of PhysicsNational University of SingaporeSingapore117542Singapore
Centre for Advanced 2D Materials and Graphene Research CentreNational University of SingaporeSingapore117546Singapore
Department of ChemistryNational University of SingaporeSingapore117543Singapore
SZU-NUS Collaborative Innovation Center for Optoelectronic Science and TechnologyShenzhen UniversityShenzhen518060China
National University of Singapore (Suzhou) Research Institute377 Lin Quan Street, Suzhou Industrial ParkSuzhou215123China

§ These authors contributed equally to these work.

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Abstract

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have attracted enormous research interests and efforts towards the development of versatile electronic and optical devices, owing to their extraordinary and unique fundamental properties and remarkable prospects in nanoelectronic applications. Among the TMDs, tungsten diselenide (WSe2) exhibits tunable ambipolar transport characteristics and superior optical properties such as high quantum efficiency. Herein, we demonstrate significant enhancement in the device performance of WSe2 phototransistor by in situ surface functionalization with cesium carbonate (Cs2CO3). WSe2 was found to be strongly doped with electrons after Cs2CO3 modification. The electron mobility of WSe2 increased by almost one order of magnitude after surface functionalization with 1.6-nm-thick Cs2CO3 decoration. Furthermore, the photocurrent of the WSe2-based phototransistor increased by nearly three orders of magnitude with the deposition of 1.6-nm-thick Cs2CO3. Characterizations by in situ photoelectron spectroscopy techniques confirmed the significant surface charge transfer occurring at the Cs2CO3/WSe2 interface. Our findings coupled with the tunable nature of the surface transfer doping method establish WSe2 as a promising candidate for future 2D materials- based optoelectronic devices.

Keywords

WSe2in situ surface transfer dopingperformance enhancementphototransistorcesium carbonate

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Nano Research
Volume 10 Issue 4,
April 2017
Pages 1282-1291
DOI: 10.1007/s12274-016-1386-1
Cite this article:
Lei B, Hu Z, Xiang D, et al. Significantly enhanced optoelectronic performance of tungsten diselenide phototransistor via surface functionalization. Nano Research, 2017, 10(4): 1282-1291. https://doi.org/10.1007/s12274-016-1386-1
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Received: 07 October 2016
Revised: 20 November 2016
Accepted: 21 November 2016
Published: 06 January 2017
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016
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