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Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition
Yongji Gong2,5(
), Pulickel M. Ajayan1,2()
), Pulickel M. Ajayan1,2()Abstract
Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of ~2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition (CVD) growth of atomic-layer SnS2 with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.
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Pages 2386-2394
Cite this article:
Ye G, Gong Y, Lei S, et al. Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition. Nano Research, 2017, 10(7): 2386-2394. https://doi.org/10.1007/s12274-017-1436-3
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