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Research Article

Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition

Gonglan Ye1, Yongji Gong2,5( ), Sidong Lei1, Yongmin He1, Bo Li1, Xiang Zhang3, Zehua Jin1, Liangliang Dong2, Jun Lou1, Robert Vajtai1, Wu Zhou4, Pulickel M. Ajayan1,2( )
Department of Materials Science & NanoEngineering Rice University Houston Texas 77005 USA
Department of Chemistry Rice University Houston Texas 77005 USA
Department of Applied Physics Rice University Houston Texas 77005 USA
Materials Science & Technology Division Oak Ridge National Lab Oak Ridge TN 37831 USA
School of Materials Science and Engineering Beihang University Beijing 100191 China
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Graphical Abstract

Abstract

Two-dimensional layers of metal dichalcogenides have attracted much attention because of their ultrathin thickness and potential applications in electronics and optoelectronics. Monolayer SnS2, with a band gap of ~2.6 eV, has an octahedral lattice made of two atomic layers of sulfur and one atomic layer of tin. Till date, there have been limited reports on the growth of large-scale and high quality SnS2 atomic layers and the investigation of their properties as a semiconductor. Here, we report the chemical vapor deposition (CVD) growth of atomic-layer SnS2 with a large crystal size and uniformity. In addition, the number of layers can be changed from a monolayer to few layers and to bulk by changing the growth time. Scanning transmission electron microscopy was used to analyze the atomic structure and demonstrate the 2H stacking poly-type of different layers. The resultant SnS2 crystals is used as a photodetector with external quantum efficiency as high as 150%, suggesting promise for optoelectronic applications.

Keywords

metal dichalcogenidestin disulfidetwo-dimensional materialschemical vapor depositionphotodetector

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Nano Research
Volume 10 Issue 7,
July 2017
Pages 2386-2394
DOI: 10.1007/s12274-017-1436-3
Cite this article:
Ye G, Gong Y, Lei S, et al. Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition. Nano Research, 2017, 10(7): 2386-2394. https://doi.org/10.1007/s12274-017-1436-3

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Received: 23 September 2016
Revised: 21 December 2016
Accepted: 26 December 2016
Published: 31 March 2017
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017
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