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Research Article

Deriving phosphorus atomic chains from few-layer black phosphorus

Zhangru Xiao1,§, Jingsi Qiao2,§, Wanglin Lu1, Guojun Ye3,4, Xianhui Chen3,4, Ze Zhang1, Wei Ji2( ), Jixue Li1( ), Chuanhong Jin1( )
State Key Laboratory of Silicon MaterialsSchool of Materials Science and Engineering, Zhejiang UniversityHangzhou310027China
Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano DevicesRenmin University of ChinaBeijing100872China
Key Laboratory of Strongly-coupled Quantum Matter PhysicsHefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of ChinaHefei230026China
Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityNanjing210093China

§ These authors contributed equally to this work.

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Abstract

Phosphorus atomic chains, the narrowest nanostructures of black phosphorus (BP), are highly relevant to the in-depth development of BP-based one-dimensional (1D) nano-electronics components. In this study, we report a top-down route for the preparation of phosphorus atomic chains via electron beam sculpturing inside a transmission electron microscope (TEM). The growth and dynamics (i.e., rupture and edge migration) of 1D phosphorus chains are experimentally captured for the first time. Furthermore, the dynamic behavior and associated energetics of the as-formed phosphorus chains are further investigated by density functional theory (DFT) calculations. It is hoped that these 1D BP structures will serve as a novel platform and inspire further exploration of the versatile properties of BP.

Keywords

black phosphorusone-dimensional atomic chaindensity functional theory

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Nano Research
Volume 10 Issue 7,
July 2017
Pages 2519-2526
DOI: 10.1007/s12274-017-1456-z
Cite this article:
Xiao Z, Qiao J, Lu W, et al. Deriving phosphorus atomic chains from few-layer black phosphorus. Nano Research, 2017, 10(7): 2519-2526. https://doi.org/10.1007/s12274-017-1456-z

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Received: 14 November 2016
Revised: 01 January 2017
Accepted: 02 January 2017
Published: 03 April 2017
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017
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