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Research Article

Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

Qing Luo1,2, Xiaoxin Xu1,2, Hangbing Lv1,2,3( ), Tiancheng Gong1,2, Shibing Long1,2, Qi Liu1,2, Ling Li1,2, Ming Liu1,2,3( )
Key Laboratory of Microelectronics Devices & Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
University of Chinese Academy of SciencesBeijing100049China
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing211800China
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Abstract

Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the "sneaking current problem", which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaOx-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density (1 MA·cm–2), high selectivity (5 × 104), low off-state current (~10 pA), robust endurance (> 1010), self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor (1S1R) device exhibits high nonlinearity in the low resistance state (LRS), which is quite effective in solving the sneaking current issue.

Keywords

crossbar arrayselectortrapezoidal barriergradient oxygen concentrationhigh uniformity

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Nano Research
Volume 10 Issue 10,
October 2017
Pages 3295-3302
DOI: 10.1007/s12274-017-1542-2
Cite this article:
Luo Q, Xu X, Lv H, et al. Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array. Nano Research, 2017, 10(10): 3295-3302. https://doi.org/10.1007/s12274-017-1542-2

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Received: 29 November 2016
Revised: 15 February 2017
Accepted: 17 February 2017
Published: 06 May 2017
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017
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