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Research Article

Tribotronic triggers and sequential logic circuits

Li Min Zhang1Zhi Wei Yang1Yao Kun Pang1Tao Zhou1Chi Zhang1( )Zhong Lin Wang1,2( )
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesNational Center for Nanoscience and TechnologyBeijing100083China
School of Material Science and EngineeringGeorgia Institute of TechnologyAtlantaGA 30332-0245USA
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Abstract

In this paper, a floating-gate tribotronic transistor (FGTT) based on a mobile triboelectric layer and a traditional silicon-based field-effect transistor (FET) is proposed. In the FGTT, the triboelectric charges in the layer created by contact electrification can be used to modulate charge carrier transport in the transistor. Based on the FGTTs and FETs, a tribotronic negated AND (NAND) gate that achieves mechanical-electrical coupled inputs, logic operations, and electrical level outputs is fabricated. By further integrating tribotronic NAND gates with traditional digital circuits, several basic units such as the tribotronic S-R trigger, D trigger, and T trigger have been demonstrated. Additionally, tribotronic sequential logic circuits such as registers and counters have also been integrated to enable external contact triggered storage and computation. In contrast to the conventional sequential logic units controlled by electrical signals, contact-triggered tribotronic sequential logic circuits are able to realize direct interaction and integration with the external environment. This development can lead to their potential application in micro/nano-sensors, electromechanical storage, interactive control, and intelligent instrumentation.

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Nano Research
Pages 3534-3542
Cite this article:
Zhang LM, Yang ZW, Pang YK, et al. Tribotronic triggers and sequential logic circuits. Nano Research, 2017, 10(10): 3534-3542. https://doi.org/10.1007/s12274-017-1564-9

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Received: 08 February 2017
Revised: 23 February 2017
Accepted: 26 February 2017
Published: 14 June 2017
© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2017
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