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Research Article

Highly-anisotropic optical and electrical properties in layered SnSe

Shengxue Yang1,2,§(), Yuan Liu3,§, Minghui Wu4,§, Li-Dong Zhao2, Zhaoyang Lin1, Hung-chieh Cheng3, Yiliu Wang1, Chengbao Jiang2, Su-Huai Wei5, Li Huang4, Yu Huang3,6, Xiangfeng Duan1,6()
Department of Chemistry and BiochemistryUniversity of CaliforniaLos AngelesCA90095USA
School of Materials Science and EngineeringBeihang UniversityBeijing100191China
Department of Materials Science and EngineeringUniversity of CaliforniaLos AngelesCA90095USA
Department of PhysicsSouth University of Science and Technology of ChinaShenzhen518005China
Beijing Computational Science Research CenterBeijing100094China
California Nanosystems InstituteUniversity of CaliforniaLos AngelesCA90095USA

§ Shengxue Yang, Yuan Liu, and Minghui Wu contributed equally to this work.

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Abstract

Anisotropic materials are of considerable interest because of their unique combination of polarization- or direction-dependent electrical, optical, and thermoelectric properties. Low-symmetry two-dimensional (2D) materials formed by van der Waals stacking of covalently bonded atomic layers are inherently anisotropic. Layered SnSe exhibits a low degree of lattice symmetry, with a distorted NaCl structure and an in-plane anisotropy. Here we report a systematic study of the in-plane anisotropic properties in layered SnSe, using angle-resolved Raman scattering, optical absorption, and electrical transport studies. The optical and electrical characterization was direction-dependent, and successfully identified the crystalline orientation in the layered SnSe. Furthermore, the dependence of Raman-intensity anisotropy on the SnSe flake thickness and the excitation wavelength were investigated by both experiments and theoretical calculations. Finally, the electrical transport studies demonstrated that few-layer SnSe field-effect transistors (FETs) have a large anisotropic ratio of carrier mobility (~5.8) between the armchair and zigzag directions, which is a record high value reported for 2D anisotropic materials. The highly-anisotropic properties of layered SnSe indicate considerable promise for anisotropic optics, electronics, and optoelectronics.

Keywords

layered SnSeanisotropyangle-resolved transportspolarized Raman scatteringangle-resolved optical absorption

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Nano Research
Volume 11 Issue 1,
January 2018
Pages 554-564
DOI: 10.1007/s12274-017-1712-2
Cite this article:
Yang S, Liu Y, Wu M, et al. Highly-anisotropic optical and electrical properties in layered SnSe. Nano Research, 2018, 11(1): 554-564. https://doi.org/10.1007/s12274-017-1712-2
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