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Research Article

Discharge voltage behavior of electric double-layer capacitors during high-g impact and their application to autonomously sensing high-g accelerometers

Keren Dai1,2,3Xiaofeng Wang1,2,3( )Fang Yi4Yajiang Yin1,2,3Cheng Jiang1,2,3Simiao Niu5Qingyu Li6Zheng You1,2,3( )
Collaborative Innovation Center for Micro/Nano FabricationDevice and SystemTsinghua UniversityBeijing100084China
State Key Laboratory of Precision Measurement Technology and InstrumentsTsinghua UniversityBeijing100084China
Department of Precision InstrumentTsinghua UniversityBeijing100084China
College of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
School of Chemical EngineeringStanford UniversityStanfordCalifornia94305USA
Department of Electronic EngineeringTsinghua UniversityBeijing100084China
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Abstract

In this study, the discharge voltage behavior of electric double-layer capacitors (EDLCs) during high-g impact is studied both theoretically and experimentally. A micro-scale dynamic mechanism is proposed to describe the physical basis of the increase in the discharge voltage during a high-g impact. Based on this dynamic mechanism, a multi-field model is established, and the simulation and experimental studies of the discharge voltage increase phenomenon are conducted. From the simulation and experimental data, the relationship between the increased voltage and the high-g acceleration is revealed. An acceleration detection range of up to 10, 000g is verified. The design of the device is optimized by studying the influences of the parameters, such as the electrode thickness and discharge current, on the outputs. This work opens up new avenues for the development of autonomous sensor systems based on energy storage devices and is significant for many practical applications such as in collision testing and automobile safety.

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Nano Research
Pages 1146-1156
Cite this article:
Dai K, Wang X, Yi F, et al. Discharge voltage behavior of electric double-layer capacitors during high-g impact and their application to autonomously sensing high-g accelerometers. Nano Research, 2018, 11(2): 1146-1156. https://doi.org/10.1007/s12274-017-1740-y

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Received: 10 April 2017
Revised: 12 June 2017
Accepted: 23 June 2017
Published: 06 September 2017
© Tsinghua University Press and Springer-Verlag GmbH Germany 2017
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