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Research Article

Electrical contacts in monolayer blue phosphorene devices

Jingzhen Li1,§, Xiaotian Sun3,§, Chengyong Xu4,§, Xiuying Zhang1, Yuanyuan Pan1, Meng Ye1, Zhigang Song1, Ruge Quhe5, Yangyang Wang1,6, Han Zhang1, Ying Guo7, Jinbo Yang1,2, Feng Pan8(), Jing Lu1,2()
State Key Laboratory for Mesoscopic Physics and Department of PhysicsPeking UniversityBeijing100871China
Collaborative Innovation Center of Quantum MatterBeijing100871China
College of Chemistry and Chemical Engineeringand Henan Key Laboratory of Function-Oriented Porous MaterialsLuoyang Normal UniversityLuoyang471934China
School of ScienceNanchang Institute of TechnologyNanchang330099China
State Key Laboratory of Information Photonics and Optical Communications and School of ScienceBeijing University of Posts and TelecommunicationsBeijing100876China
Nanophotonics and Optoelectronics Research CenterQian Xuesen Laboratory of Space TechnologyChina Academy of Space TechnologyBeijing100094China
School of Physics and Telecommunication EngineeringShaanxi University of TechnologyHanzhong723001China
School of Advanced MaterialsPeking UniversityShenzhen Graduate SchoolShenzhen518055China

§ Jingzhen Li, Xiaotian Sun and Chengyong Xu contributed equally to this work.

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Abstract

Semiconducting monolayer (ML) blue phosphorene (BlueP) shares similar stability with ML black phosphorene (BP), and it has recently been grown on an Au surface. Potential ML BlueP devices often require direct contact with metal to enable the injection of carriers. Using ab initio electronic structure calculations and quantum transport simulations, for the first time, we perform a systematic study of the interfacial properties of ML BlueP in contact with metals spanning a wide work function range in a field effect transistor (FET) configuration. ML BlueP has undergone metallization owing to strong interaction with five metals. There is a strong Fermi level pinning (FLP) in the ML BlueP FETs due to the metal-induced gap states (MIGS) with a pinning factor of 0.42. ML BlueP forms n-type Schottky contact with Sc, Ag, and Pt electrodes with electron Schottky barrier heights (SBHs) of 0.22, 0.22, and 0.80 eV, respectively, and p-type Schottky contact with Au and Pd electrodes with hole SBHs of 0.61 and 0.79 eV, respectively. The MIGS are eliminated by inserting graphene between ML BlueP and the metal electrode, accompanied by a transition from a strong FLP to a weak FLP. Our study not only provides insight into the ML BlueP–metal interfaces, but also helps in the design of ML BlueP devices.

Keywords

polyaniline triboelectricnanogeneratorwind-drivenself-poweredcathodic protection

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Nano Research
Volume 11 Issue 4,
April 2018
Pages 1834-1849
DOI: 10.1007/s12274-017-1801-2
Cite this article:
Li J, Sun X, Xu C, et al. Electrical contacts in monolayer blue phosphorene devices. Nano Research, 2018, 11(4): 1834-1849. https://doi.org/10.1007/s12274-017-1801-2
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