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Research Article

Visualizing grain boundaries in monolayer MoSe2 using mild H2O vapor etching

Jinhuan Wang1,§, Xiaozhi Xu2,§, Ruixi Qiao2,§, Jing Liang2, Can Liu2, Bohao Zheng2, Lei Liu3, Peng Gao4, Qingze Jiao1, Dapeng Yu5, Yun Zhao1( ), Kaihui Liu2,6( )
School of Chemistry and Chemical EngineeringBeijing Institute of TechnologyBeijing100081China
State Key Laboratory for Mesoscopic PhysicsSchool of PhysicsPeking UniversityBeijing100871China
Department of Materials Science and EngineeringCollege of EngineeringPeking UniversityBeijing100871China
International Centre for Quantum Materialsand Electron Microscopy LaboratorySchool of PhysicsPeking UniversityBeijing100871China
Department of PhysicsSouth University of Science and Technology of ChinaShenzhen518055China
Collaborative Innovation Centre of Quantum MatterBeijing100871China

§Jinhuan Wang, Xiaozhi Xu and Ruixi Qiao contributed equally to this work.

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Abstract

Beyond graphene, two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention owing to their potential in next-generation nanoelectronics and optoelectronics. Nevertheless, grain boundaries are ubiquitous in large-area as-grown TMD materials and would significantly affect their band structure, electrical transport, and optical properties. Therefore, the characterization of grain boundaries is essential for engineering the properties and optimizing the growth in TMD materials. Although the existence of boundaries can be measured using scanning tunneling microscopy, transmission electron microscopy, or nonlinear optical microscopy, a universal, convenient, and accurate method to detect boundaries with a twist angle over a large scale is still lacking. Herein, we report a high-throughput method using mild hot H2O etching to visualize grain boundaries of TMDs under an optical microscope, while ensuring that the method is nearly noninvasive to grain domains. This technique utilizes the reactivity difference between stable grain domains and defective grain boundaries and the mild etching capacity of hot water vapor. As grain boundaries of two domains with twist angles have defective lines, this method enables to visualize all types of grain boundaries unambiguously. Moreover, the characterization is based on an optical microscope and therefore naturally of a large scale. We further demonstrate the successful application of this method to other TMD materials such as MoS2 and WSe2. Our technique facilitates the large-area characterization of grain boundaries and will accelerate the controllable growth of large single-crystal TMDs.

Keywords

MoSe2 grain boundaryhot water vaporsingle crystal

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Nano Research
Volume 11 Issue 8,
August 2018
Pages 4082-4089
DOI: 10.1007/s12274-018-1991-2
Cite this article:
Wang J, Xu X, Qiao R, et al. Visualizing grain boundaries in monolayer MoSe2 using mild H2O vapor etching. Nano Research, 2018, 11(8): 4082-4089. https://doi.org/10.1007/s12274-018-1991-2

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Received: 28 November 2017
Revised: 03 January 2018
Accepted: 07 January 2018
Published: 25 January 2018
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018
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