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Research Article

In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity

Ranran Zhuo1,§, Longhui Zeng2,§, Huiyu Yuan2, Di Wu1(), Yuange Wang1, Zhifeng Shi1, Tingting Xu1, Yongtao Tian1, Xinjian Li1(), Yuen Hong Tsang2()
School of Physics and Engineering,and Key Laboratory of Material Physics, Zhengzhou University,Zhengzhou,450052,China;
Department of Applied Physics and Materials Research Center,The Hong Kong Polytechnic University,Hung Hom, Kowloon, Hong Kong,China;

§ Ranran Zhuo and Longhui Zeng contributed equally to this work.

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Abstract

The research of ultraviolet photodetectors (UV PDs) have been attracting extensive attention, due to their important applications in many areas. In this study, PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional (2D) PtSe2 film on n-GaN substrate. The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage. Further analysis reveals that a high responsivity of 193 mAdW-1, an ultrahigh specific detectivity of 3.8 × 1014 Jones, linear dynamic range of 155 dB and current on/off ratio of ~ 108, as well as fast response speeds of 45/102 njs were obtained at zero bias voltage. Moreover, this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns. Such high-performance PtSe2/GaN heterojunction UV PD demonstrated in this work is far superior to previously reported results, suggesting that it has great potential for deep UV detection.

Keywords

PtSe2heterojunctiondeep ultravioletphotodetectorsself-powered

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Nano Research
Volume 12 Issue 1,
January 2019
Pages 183-189
DOI: 10.1007/s12274-018-2200-z
Cite this article:
Zhuo R, Zeng L, Yuan H, et al. In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity. Nano Research, 2019, 12(1): 183-189. https://doi.org/10.1007/s12274-018-2200-z
Topics:
FabricationGallium nitrideHeterojunctionsIIIPhotodetectorsPhotonsV semiconductors
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