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Research Article

In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity

Ranran Zhuo1,§, Longhui Zeng2,§, Huiyu Yuan2, Di Wu1( ), Yuange Wang1, Zhifeng Shi1, Tingting Xu1, Yongtao Tian1, Xinjian Li1( ), Yuen Hong Tsang2( )
School of Physics and Engineering,and Key Laboratory of Material Physics, Zhengzhou University,Zhengzhou,450052,China;
Department of Applied Physics and Materials Research Center,The Hong Kong Polytechnic University,Hung Hom, Kowloon, Hong Kong,China;

§ Ranran Zhuo and Longhui Zeng contributed equally to this work.

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Abstract

The research of ultraviolet photodetectors (UV PDs) have been attracting extensive attention, due to their important applications in many areas. In this study, PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional (2D) PtSe2 film on n-GaN substrate. The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage. Further analysis reveals that a high responsivity of 193 mAdW-1, an ultrahigh specific detectivity of 3.8 × 1014 Jones, linear dynamic range of 155 dB and current on/off ratio of ~ 108, as well as fast response speeds of 45/102 njs were obtained at zero bias voltage. Moreover, this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns. Such high-performance PtSe2/GaN heterojunction UV PD demonstrated in this work is far superior to previously reported results, suggesting that it has great potential for deep UV detection.

Keywords

PtSe2heterojunctiondeep ultravioletphotodetectorsself-powered

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Nano Research
Volume 12 Issue 1,
January 2019
Pages 183-189
DOI: 10.1007/s12274-018-2200-z
Cite this article:
Zhuo R, Zeng L, Yuan H, et al. In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity. Nano Research, 2019, 12(1): 183-189. https://doi.org/10.1007/s12274-018-2200-z
Topics:
FabricationGallium nitrideHeterojunctionsIIIPhotodetectorsPhotonsV semiconductors
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Received: 20 July 2018
Revised: 06 September 2018
Accepted: 10 September 2018
Published: 18 September 2018
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018
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