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Research Article

Effective N-methyl-2-pyrrolidone wet cleaning for fabricating highperformance monolayer MoS2 transistors

Po-Chun Chen1,§, Chih-Pin Lin2,§, Chuan-Jie Hong3, Chih-Hao Yang3, Yun-Yan Lin1, Ming-Yang Li4, Lain-Jong Li5, Tung-Yuan Yu6, Chun-Jung Su6, Kai-Shin Li6, Yuan-Liang Zhong3, Tuo-Hung Hou2( ), Yann-Wen Lan1( )
Department of Physics,"National Taiwan Normal University",Taipei,11677;
Department of Electronics Engineering and Institute of Electronics,"National Chiao Tung University",Hsinchu,30010;
Department of Physics and Center for Nanotechnology,Chung Yuan Christian University,Chungli,32023;
Research Center for Applied Sciences,"Academia Sinica",Taipei,11529;
Physical Sci. and Eng.,King Abdullah University of Sci. and Technology,Thuwal,23955,Kingdom of Saudi Arabia;
"National Nano Device Laboratories","National Applied Research Laboratories",Hsinchu,30078;

§Po-Chun Chen and Chih-Pin Lin contributed equally to this work.

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Graphical Abstract

Abstract

Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS2, but also significantly improves the performance of monolayer MoS2 field-effect-transistors. Superior device on current of 12 μA·μm–1 for a channel length of 400 nm, contact resistance of 15 kΩ·μm, field-effect mobility of 15.5 cm2·V–1·s–1, and the average on–off current ratio of 108 were successfully demonstrated

Keywords

monolayer MoS2 devicesstandard wet cleaningfield-effect transistorsN-methyl-2-pyrrolidone

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Nano Research
Volume 12 Issue 2,
February 2019
Pages 303-308
DOI: 10.1007/s12274-018-2215-5
Cite this article:
Chen P-C, Lin C-P, Hong C-J, et al. Effective N-methyl-2-pyrrolidone wet cleaning for fabricating highperformance monolayer MoS2 transistors. Nano Research, 2019, 12(2): 303-308. https://doi.org/10.1007/s12274-018-2215-5
Topics:
FabricationField effect transistorsLayered semiconductorsMolybdenum compoundsMonolayersNitrogen compoundsSemiconductor device manufacture Surface cleaning

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Received: 27 June 2018
Revised: 28 September 2018
Accepted: 05 October 2018
Published: 05 October 2018
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018
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