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Research Article

Black phosphorus inverter devices enabled by in-situ aluminum surface modification

Yue Zheng1,2,§, Zehua Hu2,§, Cheng Han3, Rui Guo4, Du Xiang2,4, Bo Lei2, Yanan Wang2, Jun He5, Min Lai1, Wei Chen2,4,6()
School of Physics and Optoelectronic Engineering,Nanjing University of Information Science & Technology,Nanjing,210044,China;
Department of Physics,National University of Singapore,Singapore,117542,Singapore;
SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology,Shenzhen University,Shenzhen,518060,China;
Department of Chemistry,National University of Singapore,Singapore,117543,Singapore;
School of Physics and Electronics,Central South University,Changsha,410083,China;
National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China

§ Yue Zheng and Zehua Hu contributed equally to this work.

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Abstract

Two-dimensional black phosphorus (BP) generally exhibits a hole-dominated transport characteristic when configured as field-effect transistor devices. The effective control of charge carrier type and concentration is very crucial for the application of BP in complementary electronics. Herein, we report a facile and effective electron doping methodology on BP, through in situ surface modification with aluminum (Al). The electron mobility of few-layer BP is found to be largely enhanced to ~ 10.6 cm2·V-1·s-1 by over 6 times after aluminum modification. In situ photoelectron spectroscopy characterization reveals the formation of Al-P covalent bond at the interface, which can also serve as local gate to tune the transport properties in BP layers. Finally, a spatially-controlled aluminum doping technique is employed to establish a p-n homojunction on a single BP flake, and hence to realize the complementary inverter devices, where the highest gain value of ~ 33 is obtained.

Keywords

black phosphorusaluminumsurface dopingelectron mobilityinverter

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Nano Research
Volume 12 Issue 3,
March 2019
Pages 531-536
DOI: 10.1007/s12274-018-2246-y
Cite this article:
Zheng Y, Hu Z, Han C, et al. Black phosphorus inverter devices enabled by in-situ aluminum surface modification. Nano Research, 2019, 12(3): 531-536. https://doi.org/10.1007/s12274-018-2246-y
Topics:
AluminumField effect transistorsPhosphorusPhotoelectron spectroscopy
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