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Research Article

Black phosphorus inverter devices enabled by in-situ aluminum surface modification

Yue Zheng1,2,§, Zehua Hu2,§, Cheng Han3, Rui Guo4, Du Xiang2,4, Bo Lei2, Yanan Wang2, Jun He5, Min Lai1, Wei Chen2,4,6( )
School of Physics and Optoelectronic Engineering,Nanjing University of Information Science & Technology,Nanjing,210044,China;
Department of Physics,National University of Singapore,Singapore,117542,Singapore;
SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology,Shenzhen University,Shenzhen,518060,China;
Department of Chemistry,National University of Singapore,Singapore,117543,Singapore;
School of Physics and Electronics,Central South University,Changsha,410083,China;
National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China

§ Yue Zheng and Zehua Hu contributed equally to this work.

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Graphical Abstract

Abstract

Two-dimensional black phosphorus (BP) generally exhibits a hole-dominated transport characteristic when configured as field-effect transistor devices. The effective control of charge carrier type and concentration is very crucial for the application of BP in complementary electronics. Herein, we report a facile and effective electron doping methodology on BP, through in situ surface modification with aluminum (Al). The electron mobility of few-layer BP is found to be largely enhanced to ~ 10.6 cm2·V-1·s-1 by over 6 times after aluminum modification. In situ photoelectron spectroscopy characterization reveals the formation of Al-P covalent bond at the interface, which can also serve as local gate to tune the transport properties in BP layers. Finally, a spatially-controlled aluminum doping technique is employed to establish a p-n homojunction on a single BP flake, and hence to realize the complementary inverter devices, where the highest gain value of ~ 33 is obtained.

Keywords

black phosphorusaluminumsurface dopingelectron mobilityinverter

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Nano Research
Volume 12 Issue 3,
March 2019
Pages 531-536
DOI: 10.1007/s12274-018-2246-y
Cite this article:
Zheng Y, Hu Z, Han C, et al. Black phosphorus inverter devices enabled by in-situ aluminum surface modification. Nano Research, 2019, 12(3): 531-536. https://doi.org/10.1007/s12274-018-2246-y
Topics:
AluminumField effect transistorsPhosphorusPhotoelectron spectroscopy

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Received: 30 June 2018
Revised: 05 November 2018
Accepted: 12 November 2018
Published: 21 November 2018
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2018
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