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Research Article

Large-area patterning of substrate-conformal MoS2 nano-trenches

Christian Martella1,2( ), Luca Ortolani3( ), Elena Cianci1, Alessio Lamperti1, Vittorio Morandi3, Alessandro Molle1( )
IMM-CNR, via C. Olivetti 2,Agrate Brianza (MB),I-20864,Italy;
ISC-CNR, U.O.S. Sapienza,Roma,I-00185,Italy;
IMM-CNR, via Gobetti 101, Bologna (BO),I-40129,Italy;
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Graphical Abstract

Abstract

Within the class of two-dimensional materials, transition metal dichalcogenides (TMDs), are extremely appealing for a variety of technological applications. Moreover, the manipulation of the layered morphology at the nanoscale is a knob for further tailoring their physical and chemical properties towards target applications. Here, the combination of atomic layer deposition (ALD) and chemical vapour deposition (CVD) is presented as a general approach for the fabrication of TMD layers arranged in arbitrary geometry at the nanoscale. Indeed, following such all-chemical based approach, high-resolution electron microscopy shows the conformal growth of MoS2 to nano-trench pattern obtained in SiO2 substrates on large area. Growth is uniform not only in the flat region of the pattern but also at the hinges and throughout vertical faces, without rupture, all along the rectangular shape profile of the trenches. Furthermore, MoS2 bending dramatically affects the electron-phonon coupling as demonstrated by resonant Raman scattering. The proposed approach opens the door to the on-demand manipulation of the TMDs properties by large-scale substrate pattern design.

Keywords

two-dimensional (2D) materialstransition metal dichalcogenidesnano-trenchesconformal growthshigh-resolution electron microscopy

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Nano Research
Volume 12 Issue 8,
August 2019
Pages 1851-1854
DOI: 10.1007/s12274-019-2446-0
Cite this article:
Martella C, Ortolani L, Cianci E, et al. Large-area patterning of substrate-conformal MoS2 nano-trenches. Nano Research, 2019, 12(8): 1851-1854. https://doi.org/10.1007/s12274-019-2446-0
Topics:
Atomic layer deposition Chemical vapor depositionElectron microscopyElectronsHigh resolution electron microscopyLayered semiconductorsMolybdenum compoundsMorphologySilicaSubstratesTransition metals

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Received: 08 March 2019
Revised: 16 May 2019
Accepted: 26 May 2019
Published: 04 June 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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