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Research Article

MoS2 dual-gate transistors with electrostatically doped contacts

Fuyou Liao1<, Yaocheng Sheng1<, Zhongxun Guo1, Hongwei Tang1, Yin Wang1, Lingyi Zong1, Xinyu Chen1, Antoine Riaud1, Jiahe Zhu3, Yufeng Xie1, Lin Chen1, Hao Zhu1, Qingqing Sun1, Peng Zhou1, Xiangwei Jiang4, Jing Wan2( ), Wenzhong Bao1( ), David Wei Zhang1
State Key Laboratory of ASIC and System,School of Microelectronics, Fudan University,Shanghai,200433,China;
State Key Laboratory of ASIC and System,School of Information Science and Engineering, Fudan University,Shanghai,200433,China;
School of Electronic Science and Engineering,Nanjing University,Nanjing,210093,China;
Institute of Semiconductors,Chinese Academy of Sciences,Beijing,100083,China;

§ Fuyou Liao and Yaocheng Sheng contributed equally to this work.

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Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3 × 107 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.

Keywords

MoS2dual-gatetri-gatefield effect transistorextrinsic resistanceelectrostatic doping

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Nano Research
Volume 12 Issue 10,
October 2019
Pages 2515-2519
DOI: 10.1007/s12274-019-2478-5
Cite this article:
Liao F, Sheng Y, Guo Z, et al. MoS2 dual-gate transistors with electrostatically doped contacts. Nano Research, 2019, 12(10): 2515-2519. https://doi.org/10.1007/s12274-019-2478-5
Topics:
Layered semiconductorsSulfur compoundsTransition metals

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Received: 27 April 2019
Revised: 24 June 2019
Accepted: 12 July 2019
Published: 01 August 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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