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Research Article

Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts

Alexandre Bucamp1, Christophe Coinon1, David Troadec1, Sylvie Lepilliet1, Gilles Patriarche2, Xavier Wallart1, Ludovic Desplanque1( )
Univ. Lille, CNRS, Centrale Lille, Yncréa ISEN, Univ. Polytechnique Hauts-de-France, UMR 8520-IEMN, F-59000 Lille, France
C2N-UMR 9001 CNRS, Université Paris-Sud-Université Paris-Saclay, 91120 Palaiseau, France
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Abstract

Three-dimensional (3D) nanoscale crystal shaping has become essential for the precise design of advanced electronic and quantum devices based on electrically gated transport. In this context, III-V semiconductor-based nanowires with low electron effective mass and strong spin-orbit coupling are particularly investigated because of their exceptional quantum transport properties and the good electrostatic control they provide. Among the main challenges involved in the processing of these nanodevices are (i) the management of the gate stack which requires ex-situ passivation treatment to reduce the density of traps at the oxide/semiconductor interface, (ii) the ability to get good ohmic contacts for source and drain electrodes and (iii) the scalability and reliability of the process for the fabrication of complex architectures based on nanowire networks. In this paper, we show that selective area molecular beam epitaxy of in-plane InGaAs/InP core-shell nanowires with raised heavily doped source and drain contacts can address these different issues. Electrical characterization of the devices down to 4 K reveals the positive impact of the InP shell on the gate electrostatic control and effective electron mobility. Although comparable to the best reported values for In(Ga)As nanostructures grown on InP, this latter is severely reduced for sub-100 nm channel highlighting remaining issue to reach the ballistic regime.

Keywords

molecular beam epitaxycore-shell nanowireselective area growtheffective electron mobility

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Nano Research
Volume 13 Issue 1,
January 2020
Pages 61-66
DOI: 10.1007/s12274-019-2572-8
Cite this article:
Bucamp A, Coinon C, Troadec D, et al. Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts. Nano Research, 2020, 13(1): 61-66. https://doi.org/10.1007/s12274-019-2572-8
Topics:
Gallium compoundsIIIIndium phosphideNanowiresQuantum chemistry Semiconducting indium gallium arsenide Semiconducting indium phosphide Shells (structures)V semiconductors

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Received: 27 September 2019
Revised: 18 November 2019
Accepted: 19 November 2019
Published: 21 December 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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