Ultrahigh sensitive near-infrared photodetectors based on MoTe<sub>2</sub>/germanium heterostructure

Wenjie Chen; Renrong Liang; Shuqin Zhang; Yu Liu; Weijun Cheng; Chuanchuan Sun; Jun Xu

doi:10.1007/s12274-019-2583-5

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Research Article

Ultrahigh sensitive near-infrared photodetectors based on MoTe₂/germanium heterostructure

Wenjie Chen^{¹^,²}, Renrong Liang^{¹^,²}(

), Shuqin Zhang^{¹^,²}, Yu Liu^{¹^,²}, Weijun Cheng^{¹^,²}, Chuanchuan Sun^³, Jun Xu^{¹^,²}(

)

1Institute of Microelectronics, Tsinghua University, Beijing 100084, China

2Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China

3Beijing Institute of Control Engineering, Beijing 100084, China

Show Author Information

Graphical Abstract

Abstract

The efficient near-infrared light detection of the MoTe₂/germanium (Ge) heterojunction has been demonstrated. The fabricated MoTe₂/Ge van der Waals heterojunction shows excellent photoresponse performances under the illumination of a 915 nm laser. The photoresponsivity and specific detectivity can reach to 12,460 A/W and 3.3 × 10¹² Jones, respectively. And the photoresponse time is 5 ms. However, the MoTe₂/Ge heterojunction suffers from a large reverse current at dark due to the low barrier between MoTe₂ and Ge. Therefore, to reduce the reverse current, an ultrathin GeO₂ layer deposited by ozone oxidation has been introduced to the MoTe₂/Ge heterojunction. The reverse current of the MoTe₂/GeO₂/Ge heterojunction at dark was suppressed from 0.44 μA/μm² to 0.03 nA/μm², being reduced by more than four orders of magnitude. The MoTe₂/Ge heterojunction with the GeO₂ layer also exhibits good photoresponse performances, with a high responsivity of 15.6 A/W, short response time of 5 ms, and good specific detectivity of 4.86 × 10¹¹ Jones. These properties suggest that MoTe₂/Ge heterostructure is one of the promising structures for the development of high performance near-infrared photodetectors.

Keywords

heterojunction photodetector MoTe₂ Ge near-infrared

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Nano Research

Volume 13 Issue 1,
January 2020

Pages 127-132

DOI: 10.1007/s12274-019-2583-5

Cite this article:

Chen W, Liang R, Zhang S, et al. Ultrahigh sensitive near-infrared photodetectors based on MoTe₂/germanium heterostructure. Nano Research, 2020, 13(1): 127-132. https://doi.org/10.1007/s12274-019-2583-5

Topics:

Germanium Germanium oxides Heterojunctions Infrared devices Photodetectors Photons Tellurium compounds Van der Waals forces

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Received: 11 September 2019

Revised: 13 November 2019

Accepted: 27 November 2019

Published: 09 December 2019

Ultrahigh sensitive near-infrared photodetectors based on MoTe2/germanium heterostructure

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Ultrahigh sensitive near-infrared photodetectors based on MoTe₂/germanium heterostructure