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Research Article

Scanning tunneling spectroscopic study of monolayer 1T-TaS2 and 1T-TaSe2

Haicheng Lin1,§, Wantong Huang1,§, Kun Zhao1, Shuang Qiao1, Zheng Liu2, Jian Wu1, Xi Chen1( ), Shuai-Hua Ji1( )
State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
Institute for Advanced Studies, Tsinghua University, Beijing 100084, China

§ Haicheng Lin andWantong Huang contributed equally to this work.

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Abstract

The isostructural and isoelectronic transition-metal-dichalcogenides 1T-TaS2 and 1T-TaSe2 are layered materials with intricate electronic structures. Combining the molecular beam epitaxy growth, scanning tunneling microscopy measurements and first-principles calculations, we prepare monolayer 1T-TaS2 and TaSe2 and explore their electronic structures at the atomic scale. Both two-dimensional (2D) compounds exhibit commensurate charge density wave phase at low temperature. The conductance mapping identifies the contributions from different Ta atoms to the local density of states with spatial and energy resolution. Both 1T-TaS2 and 1T-TaSe2 monolayer are shown to be insulators, while the former has a Mott gap and the latter is a regular band insulator.

Keywords

monolayer1T-TaS21T-TaSe2commensurate charge density wave (CCDW)Mott gapband insulator

References

[1]
Fazekas, P.; Tosatti, E. Electrical, structural and magnetic properties of pure and doped 1T-TaS2. Philos. Mag. B 1979, 39, 229-244.
Crossref Google Scholar
[2]
Di Salvo, F. J.; Graebner, J. E. The low temperature electrical properties of 1T-TaS2. Solid State Commun. 1977, 23, 825-828.
Crossref Google Scholar
[3]
Rossnagel, K.; Smith, N. V. Spin-orbit coupling in the band structure of reconstructed 1T-TaS2. Phys. Rev. B 2006, 73, 073106.
Crossref Google Scholar
[4]
Perfetti, L.; Gloor, T. A.; Mila, F.; Berger, H.; Grioni, M. Unexpected periodicity in the quasi-two-dimensional Mott insulator 1T-TaS2 revealed by angle-resolved photoemission. Phys. Rev. B 2005, 71, 153101.
Crossref Google Scholar
[5]
Ang, R.; Tanaka, Y.; Ieki, E.; Nakayama, K.; Sato, T.; Li, L. J.; Lu, W. J.; Sun, Y. P.; Takahashi, T. Real-space coexistence of the melted Mott state and superconductivity in Fe-substituted 1T-TaS2. Phys. Rev. Lett. 2012, 109, 176403.
Crossref Google Scholar
[6]
Perfetti, L.; Loukakos, P. A.; Lisowski, M.; Bovensiepen, U.; Berger, H.; Biermann, S.; Cornaglia, P. S.; Georges, A.; Wolf, M. Time evolution of the electronic structure of 1T-TaS2 through the insulator-metal transition. Phys. Rev. Lett. 2006, 97, 067402.
Crossref Google Scholar
[7]
Wilson, J. A.; de Salvo, F. J.; Mahajan, S. Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides. Adv. Phys. 2001, 50, 1171-1248.
Crossref Google Scholar
[8]
Rossnagel, K. On the origin of charge-density waves in select layered transition-metal dichalcogenides. J. Phys.: Condens. Matter. 2011, 23, 213001.
Crossref Google Scholar
[9]
Cho, D.; Cho, Y. H.; Cheong, S. W.; Kim, K. S.; Yeom, H. W. Interplay of electron-electron and electron-phonon interactions in the low-temperature phase of 1T-TaS2. Phys. Rev. B 2015, 92, 085132.
Crossref Google Scholar
[10]
Scruby, C. B.; Williams, P. M.; Parry, G. S. The role of charge density waves in structural transformations of 1T-TaS2. Philos. Mag. 1975, 31, 255-274.
Crossref Google Scholar
[11]
Smith, N. V.; Kevan, S. D.; DiSalvo, F. J. Band structures of the layer compounds 1T-TaS2 and 2H-TaSe2 in the presence of commensurate charge-density waves. J. Phys. C: Solid State Phys. 1985, 18, 3175-3189.
Google Scholar
[12]
Ritschel, T.; Trinckauf, J.; Koepernik, K.; Büchner, B.; Zimmermann, M. V.; Berger, H.; Joe, Y. I.; Abbamonte, P.; Geck, J. Orbital textures and charge density waves in transition metal dichalcogenides. Nat. Phys. 2015, 11, 328-331.
Google Scholar
[13]
Qiao, S.; Li, X. T.; Wang, N. Z.; Ruan, W.; Ye, C.; Cai, P.; Hao, Z. Q.; Yao, H.; Chen, X. H.; Wu, J. et al. Mottness collapse in 1T-TaS2-xSex transition-metal dichalcogenide: An interplay between localized and itinerant orbitals. Phys. Rev. X 2017, 7, 041054.
Google Scholar
[14]
Bovet, M.; van Smaalen, S.; Berger, H.; Gaal, R.; Forró, L.; Schlapbach, L.; Aebi, P. Interplane coupling in the quasi-two-dimensional 1T-TaS2. Phys. Rev. B 2003, 67, 125105.
Google Scholar
[15]
Tsang, J. C.; Smith, J. E. Jr.; Shafer, M. W.; Meyer, S. F. Raman spectroscopy of the charge-density-wave state in 1T- and 2H-TaSe2. Phys. Rev. B 1977, 16, 4239-4245.
Google Scholar
[16]
Horiba, K.; Ono, K.; Oh, J. H.; Kihara, T.; Nakazono, S.; Oshima, M.; Shiino, O.; Yeom, H. M.; Kakizaki, A.; Aiura, Y. Charge-density wave and three-dimensional Fermi surface in 1T-TaSe2 studied by photoemission spectroscopy. Phys. Rev. B 2002, 66, 073106.
Google Scholar
[17]
Ge, Y. Z.; Liu, A. Y. First-principles investigation of the charge-density-wave instability in 1T-TaSe2. Phys. Rev. B 2010, 82, 155133.
Google Scholar
[18]
Darancet, P.; Millis, A. J.; Marianetti, C. A. Three-dimensional metallic and two-dimensional insulating behavior in octahedral tantalum dichalcogenides. Phys. Rev. B 2014, 90, 045134.
Google Scholar
[19]
Suzuki, M. T.; Harima, H. Electronic band structure of 1T-TaSe2 in CDW phase. J. Magn. Magn. Mater. 2004, 272-276, E653-E654.
Google Scholar
[20]
Ngankeu, A. S.; Mahatha, S. K.; Guilloy, K.; Bianchi, M.; Sanders, C. E.; Hanff, K.; Rossnagel, K.; Miwa, J. A.; Nielsen, C. B.; Bremholm, M. et al. Quasi-one-dimensional metallic band dispersion in the commensurate charge density wave of 1T-TaS2. Phys. Rev. B 2017, 96, 195147.
Google Scholar
[21]
Ma, L. G.; Ye, C.; Yu, Y. J.; Lu, X. F.; Niu, X. H.; Kim, S.; Feng, D. L.; Tománek, D.; Son, Y. W.; Chen, X. H. et al. A metallic mosaic phase and the origin of Mott-insulating state in 1T-TaS2. Nat. Commun. 2016, 7, 10956.
Google Scholar
[22]
Dardel, B.; Grioni, M.; Malterre, D.; Weibel, P.; Baer, Y.; Lévy, F. Temperature-dependent pseudogap and electron localization in 1T-TaS2. Phys. Rev. B 1992, 45, 1462-1465.
Google Scholar
[23]
Cho, D.; Cheon, S.; Kim, K. S.; Lee, S. H.; Cho, Y. H.; Cheong, S. W.; Yeom, H. W. Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2. Nat. Commun. 2016, 7, 10453.
Google Scholar
[24]
Yu, Y. J.; Yang, F. Y.; Lu, X. F.; Yan, Y. J.; Cho, Y. H.; Ma, L. G.; Niu, X. H.; Kim, S.; Son, Y. W.; Feng, D. L. et al. Gate-tunable phase transitions in thin flakes of 1T-TaS2. Nat. Nanotechnol. 2015, 10, 270-276.
Google Scholar
[25]
Yoshida, M.; Zhang, Y. J.; Ye, J. T.; Suzuki, R.; Imai, Y.; Kimura, S.; Fujiwara, A.; Iwasa, Y. Controlling charge-density-wave states in nano-thick crystals of 1T-TaS2. Sci. Rep. 2014, 4, 7302.
Google Scholar
[26]
Tsen, A. W.; Hovden, R.; Wang, D.; Kim, Y. D.; Okamoto, J.; Spoth, K. A.; Liu, Y.; Lu, W. J.; Sun, Y. P.; Hone, J. C. et al. Structure and control of charge density waves in two-dimensional 1T-TaS2. Proc. Natl. Acad. Sci. USA 2015, 112, 15054-15059.
Google Scholar
[27]
Albertini, O. R.; Zhao, R.; McCann, R. L.; Feng, S. M.; Terrones, M.; Freericks, J. K.; Robinson, J. A.; Liu, A. Y. Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS2: Detection of commensurate charge density wave phase through Raman scattering. Phys. Rev. B 2016, 93, 214109.
Google Scholar
[28]
He, R.; Okamoto, J.; Ye, Z. P.; Ye, G. H.; Anderson, H.; Dai, X.; Wu, X. X.; Hu, J. P.; Liu, Y.; Lu, W. J. et al. Distinct surface and bulk charge density waves in ultrathin 1T-TaS2. Phys. Rev. B 2016, 94, 201108.
Google Scholar
[29]
Sakabe, D.; Liu, Z.; Suenaga, K.; Nakatsugawa, K.; Tanda, S. Direct observation of mono-layer, bi-layer, and tri-layer charge density waves in 1T-TaS2 by transmission electron microscopy without a substrate. NPJ Quan. Mater. 2017, 2, 22.
Google Scholar
[30]
Lin, H. C.; Huang, W. T.; Zhao, K.; Lian, C. S.; Duan, W. H.; Chen, X.; Ji, S. H. Growth of atomically thick transition metal sulfide films on graphene/6H-SiC(0001) by molecular beam epitaxy. Nano Res. 2018, 11, 4722-4727.
Google Scholar
[31]
Law, K. T.; Lee, P. A. 1T-TaS2 as a quantum spin liquid. Proc. Natl. Acad. Sci. USA 2017, 114, 6996-7000.
Google Scholar
[32]
Klanjšek, M.; Zorko, A.; Žitko, R.; Mravlje, J.; Jagličić, Z.; Biswas, P. K.; Prelovšek, P.; Mihailovic, D.; Arčon, D. A high-temperature quantum spin liquid with polaron spins. Nat. Phys. 2017, 13, 1130-1134.
Google Scholar
[33]
Ribak, A.; Silber, I.; Baines, C.; Chashka, K.; Salman, Z.; Dagan, Y.; Kanigel, A. Gapless excitations in the ground state of 1T-TaS2. Phys. Rev. B 2017, 96, 195131.
Google Scholar
[34]
Nakata, Y.; Yoshizawa, T.; Sugawara, K.; Umemoto, Y.; Takahashi, T.; Sato, T. Selective fabrication of mott-insulating and metallic monolayer TaSe2. ACS Appl. Nano Mater. 2018, 1, 1456-1460.
Google Scholar
[35]
Samnakay, R.; Wickramaratne, D.; Pope, T.; Lake, R. K.; Salguero, T. T.; Balandin, A. A. Zone-folded phonons and the commensurate-incommensurate charge-density-wave transition in 1T-TaSe2 thin films. Nano Lett. 2015, 15, 2965-2973.
Google Scholar
[36]
Perfetti, L.; Georges, A.; Florens, S.; Biermann, S.; Mitrovic, S.; Berger, H.; Tomm, Y.; Höchst, H.; Grioni, M. Spectroscopic signatures of a bandwidth-controlled mott transition at the surface of 1T-TaSe2. Phys. Rev. Lett. 2003, 90, 166401.
Google Scholar
[37]
Colonna, S.; Ronci, F.; Cricenti, A.; Perfetti, L.; Berger, H.; Grioni, M. Mott phase at the surface of 1T-TaSe2 observed by scanning tunneling microscopy. Phys. Rev. Lett. 2005, 94, 036405.
Google Scholar
[38]
Bjerkelund, E.; Kjekshus, A. On the structural properties of the Ta1+xSe2 phase. Acta Chem. Scand. 1967, 21, 513-526.
Google Scholar
[39]
Kresse, G.; Hafner, J. Ab initio molecular dynamics for liquid metals. Phys. Rev. B 1993, 47, 558-561.
Google Scholar
[40]
Kresse, G.; Hafner, J. Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium. Phys. Rev. B 1994, 49, 14251-14269.
Google Scholar
[41]
Kresse, G.; Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 1996, 6, 15-50.
Google Scholar
[42]
Kresse, G.; Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 1996, 54, 11169-11186.
Google Scholar
[43]
Kresse, G.; Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 1999, 59, 1758-1775.
Google Scholar
[44]
Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 1996, 77, 3865-3868.
Google Scholar
[45]
Liechtenstein, A. I.; Anisimov, V. I.; Zaanen, J. Density-functional theory and strong interactions: Orbital ordering in Mott-Hubbard insulators. Phys. Rev. B 1995, 52, R5467-R5470.
Google Scholar
[46]
Dudarev, S. L.; Botton, G. A.; Savrasov, S. Y.; Humphreys, C. J.; Sutton, A. P. Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study. Phys. Rev. B 1998, 57, 1505-1509.
Google Scholar
Nano Research
Volume 13 Issue 1,
January 2020
Pages 133-137
DOI: 10.1007/s12274-019-2584-4
Cite this article:
Lin H, Huang W, Zhao K, et al. Scanning tunneling spectroscopic study of monolayer 1T-TaS2 and 1T-TaSe2. Nano Research, 2020, 13(1): 133-137. https://doi.org/10.1007/s12274-019-2584-4
Topics:
CalculationsElectronic structureMonolayersScanning tunneling microscopySelenium compoundsSpectroscopic analysisTantalum compoundsTemperatureTransition metals

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Received: 27 September 2019
Revised: 22 November 2019
Accepted: 27 November 2019
Published: 23 December 2019
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019
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