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Research Article

Dynamic observation of in-plane h-BN/graphene heterostructures growth on Ni(111)

Wei Wei1,§, Jiaqi Pan1,§, Chanan Euaruksakul2, Yang Yang3, Yi Cui1( ), Qiang Fu3, Xinhe Bao3,4( )
Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Synchrotron Light Research Institute, Nakhon Ratchasima 30000, Thailand
State Key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, China

§ Wei Wei and Jiaqi Pan contributed equally to this work.

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Abstract

The lateral incorporation of graphene and hexagonal boron nitride (h-BN) onto a substrate surface creates in-plane h-BN/graphene heterostructures, which have promising applications in novel two-dimensional electronic and photoelectronic devices. The quality of h-BN/graphene domain boundaries depends on their orientation, which is crucial for device performances. Here, the heteroepitaxial growth of graphene along the edges of h-BN domains on Ni(111) surfaces as well as the growth dynamics of h-BN using chemical vapor deposition (CVD) are in situ investigated by surface imaging measurements. The nucleating seed effect of h-BN has been revealed, which contributes to the single orientation of heterostructures with epitaxial stitching. Further, the growth of h-BN prior to that of graphene is essential to obtain high-quality in-plane h-BN/graphene heterostructures on Ni(111). The "compact to fractal" shape transition of h-BN domains appears with the increasing surface concentration of the growth blocks, suggesting that the dynamic growth mechanism follows diffusion-limited aggregation (DLA) but not reaction-limited aggregation (RLA). Our results provide insights into the synthesis of well-defined h-BN/graphene heterostructures and deep understanding of the growth dynamics of h-BN on metal surfaces.

Keywords

hexagonal boron nitride (h-BN)graphenein-plane heterostructuresgrowth dynamics

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Nano Research
Volume 13 Issue 7,
July 2020
Pages 1789-1794
DOI: 10.1007/s12274-020-2638-7
Cite this article:
Wei W, Pan J, Euaruksakul C, et al. Dynamic observation of in-plane h-BN/graphene heterostructures growth on Ni(111). Nano Research, 2020, 13(7): 1789-1794. https://doi.org/10.1007/s12274-020-2638-7
Topics:
Boron nitrideChemical vapor depositionDynamics GrapheneIIINitridesSubstratesV semiconductors
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Sixth Nano Research Award

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Received: 12 November 2019
Revised: 15 December 2019
Accepted: 02 January 2020
Published: 23 January 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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