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Research Article

Effective shape-controlled synthesis of gallium selenide nanosheets by vapor phase deposition

Lilan Tan1, Qingbo Liu1, Yufeng Ding1, Xiaogang Lin2, Wei Hu2(), Meng-Qiu Cai1,3, Hong Zhou1()
School of Physics and Electronics, Hunan University, Changsha 410082, China
Key Laboratory of Optoelectronic Technology and System of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha 410081, China
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Abstract

The controlled synthesis of large and uniform gallium selenide (GaSe) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, vapor phase growth of high-quality monolayer GaSe nanosheets with multiple shape and size is achieved by tuning the Ga/GaSe ratio in the precursor. A theoretical model based on density functional theory calculations and kinetic Wulff construction theory describe the observed shape evolution of the GaSe nanosheets. Results show that the Ga/Se ratio plays a critical role in the evolution of the domain shape and size. Moreover, the as-grown GaSe nanosheets show improved performance with photoresponse time less than 0.7 ms and responsibility up to 3,000 A/W. This study presents a previously unexplored strategy for the controlled growth of two-dimensional (2D) GaSe nanosheets for promising applications in next-generation optoelectronics.

Keywords

gallium selenideshape-evolutioncontrollable growthphotodetectorgrowth dynamics

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Nano Research
Volume 13 Issue 2,
February 2020
Pages 557-563
DOI: 10.1007/s12274-020-2653-8
Cite this article:
Tan L, Liu Q, Ding Y, et al. Effective shape-controlled synthesis of gallium selenide nanosheets by vapor phase deposition. Nano Research, 2020, 13(2): 557-563. https://doi.org/10.1007/s12274-020-2653-8
Topics:
Density functional theoryLayered semiconductorsNanosheetsPhotodetectorsSelenium compounds
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