Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires

Sedighe Salimian; Omer Arif; Valentina Zannier; Daniele Ercolani; Francesca Rossi; Zahra Sadre Momtaz; Fabio Beltram; Sefano Roddaro; Francesco Rossella; Lucia Sorba

doi:10.1007/s12274-020-2745-5

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Research Article

Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires

Sedighe Salimian^¹(

), Omer Arif^¹, Valentina Zannier^¹, Daniele Ercolani^¹, Francesca Rossi^², Zahra Sadre Momtaz^¹, Fabio Beltram^¹, Sefano Roddaro^{¹^,³}, Francesco Rossella^¹(

), Lucia Sorba^¹

1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S. Silvestro 12, I-56127 Pisa, Italy

2IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma, Italy

3Department of Physics "E.Fermi" , Università di Pisa, Largo Pontecorvo 3, I-56127 Pisa, Italy

Show Author Information

Graphical Abstract

Abstract

We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/InP/ GaAsSb core-dualshell nanowires. We present a device fabrication protocol based on wet-etching processes on selected areas of the nanostructures that enables multiple configurations of measurements in the same nanowire-based device (i.e. shell-shell, core-core and core-shell). Low-temperature (4.2 K) transport in the shell-shell configuration in nanowires with 5 nm-thick InP barrier reveals a weak negative differential resistance. Differently, when the InP barrier thickness is increased to 10 nm, this negative differential resistance is fully quenched. The electrical resistance between the InAs core and the GaAsSb shell, measured in core-shell configuration, is significantly higher with respect to the resistance of the InAs core and of the GaAsSb shell. The field effect, applied via a back-gate, has an opposite impact on the electrical transport in the core and in the shell portions. Our results show that electron and hole free carriers populate the InAs and GaAsSb regions respectively and indicate InAs/InP/GaAsSb core-dualshell nanowires as an ideal system for the investigation of the physics of interacting electrons and holes at the nanoscale.

Keywords

core-dualshell nanowires charge carrier separation semiconductor nanowires nanoelectronics

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Nano Research

Volume 13 Issue 4,
April 2020

Pages 1065-1070

DOI: 10.1007/s12274-020-2745-5

Cite this article:

Salimian S, Arif O, Zannier V, et al. Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires. Nano Research, 2020, 13(4): 1065-1070. https://doi.org/10.1007/s12274-020-2745-5

Topics:

Electric field effects III Indium phosphide Nanowires Semiconducting gallium Semiconducting indium phosphide Semiconductor alloys Shells (structures)Temperature V semiconductors

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Received: 23 December 2019

Revised: 28 February 2020

Accepted: 04 March 2020

Published: 17 April 2020