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Research Article

Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors

Yang Liu1,§, Peiqi Wang1,2,§, Yiliu Wang1, Yu Huang2, Xiangfeng Duan1,3( )
Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA 90095, USA
Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
California Nanosystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA

§ Yang Liu and Peiqi Wang contributed equally to this work.

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Abstract

The layered semiconducting transition metal dichalcogenides (s-TMDs) have attracted considerable interest as the channel material for field-effect transistors (FETs). However, the multilayer s-TMD transistors usually exhibit considerable threshold voltage (Vth) shift and ambipolar behavior at high source-drain bias, which is undesirable for modern digital electronics. Here we report the design and fabrication of double feedback gate (FBG) transistors, i.e., source FBG (S-FBG) and drain FBG (D-FBG), to combat these challenges. The FBG transistors differ from normal transistors by including an extra feedback gate, which is directly connected to the source/drain electrodes by extending and overlapping the source/drain electrodes over the yttrium oxide dielectrics on s-TMDs. We show that the S-FBG transistors based on multilayer MoS2 exhibit nearly negligible Vth roll-off at large source-drain bias, and the D-FBG multilayer WSe2 transistors could be tailored into either n-type or p-type transport, depending on the polarity of the drain bias. The double FBG structure offers an effective strategy to tailor multilayer s-TMD transistors with suppressed Vth roll-off and ambipolar transport for high-performance and low-power logic applications.

Keywords

two-dimensional transition metal dichalcogenidesfeedback gate transistorthreshold voltage roll-offambipolar behavior tailoring

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Nano Research
Volume 13 Issue 7,
July 2020
Pages 1943-1947
DOI: 10.1007/s12274-020-2760-6
Cite this article:
Liu Y, Wang P, Wang Y, et al. Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors. Nano Research, 2020, 13(7): 1943-1947. https://doi.org/10.1007/s12274-020-2760-6
Topics:
Computer circuits ElectrodesLayered semiconductorsMolybdenum compoundsSelenium compoundsTransition metalsYttrium oxide
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Sixth Nano Research Award

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Received: 27 December 2019
Revised: 21 February 2020
Accepted: 16 March 2020
Published: 30 March 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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