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Research Article

Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy

Seyyedesadaf Pournia1, Samuel Linser1, Giriraj Jnawali1, Howard E. Jackson1, Leigh M. Smith1( ), Amira Ameruddin2, Philippe Caroff2, Jennifer Wong-Leung2, Hark Hoe Tan2, Chennupati Jagadish2, Hannah J. Joyce3
Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011, USA
Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK
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Abstract

We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate. From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs. This information is vital to the development of crystal phase engineering of this important III-V semiconductor.

Keywords

nanowiresWurtzite InAsphotocurrent measurementoptical selection rulesenergy band structure

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References

[1]
Hambourger, M.; Moore, G. F.; Kramer, D. M.; Gust, D.; Moore, A. L.; Moore, T. A. Biology and technology for photochemical fuel production. Chem. Soc. Rev. 2009, 38, 25-35.
Crossref Google Scholar
[2]
Garnett, E. C.; Brongersma, M. L.; Cui, Y.; McGehee, M. D. Nanowire solar cells. Annu. Rev. Mater. Res. 2011, 41, 269-295.
Crossref Google Scholar
[3]
Das, A.; Ronen, Y.; Most, Y.; Oreg, Y.; Heiblum, M.; Shtrikman, H. Zero-bias peaks and splitting in an Al-InAs nanowire topological superconductor as a signature of majorana fermions. Nat. Phys. 2012, 8, 887-895.
Crossref Google Scholar
[4]
Mishra, A.; Titova, L. V.; Hoang, T. B.; Jackson, H. E.; Smith, L. M.; Yarrison-Rice, J. M.; Kim, Y.; Joyce, H. J.; Gao, Q.; Tan, H. H. et al. Polarization and temperature dependence of photoluminescence from zincblende and Wurtzite InP nanowires. Appl. Phys. Lett. 2007, 91, 263104.
Crossref Google Scholar
[5]
Pemasiri, K.; Jackson, H. E.; Smith, L. M.; Wong, B. M.; Paiman, S.; Gao, Q.; Tan, H. H.; Jagadish, C. Quantum confinement of excitons in Wurtzite InP nanowires. J. Appl. Phys. 2015, 117, 194306.
Crossref Google Scholar
[6]
Perera, S.; Shi, T.; Fickenscher, M. A.; Jackson, H. E.; Smith, L. M.; Yarrison-Rice, J. M.; Paiman, S.; Gao, Q.; Tan, H. H.; Jagadish, C. Illuminating the second conduction band and spin-orbit energy in single Wurtzite InP nanowires. Nano Lett. 2013, 13, 5367-5372.
Crossref Google Scholar
[7]
Wallentin, J.; Mergenthaler, K.; Ek, M.; Wallenberg, L. R.; Samuelson, L.; Deppert, K.; Pistol, M. E.; Borgström, M. T. Probing the Wurtzite conduction band structure using state filling in highly doped InP nanowires. Nano Lett. 2011, 11, 2286-2290.
Crossref Google Scholar
[8]
Signorello, G.; Lörtscher, E.; Khomyakov, P. A.; Karg, S.; Dheeraj, D. L.; Gotsmann, B.; Weman, H.; Riel, H.; Signorello, G.; Lo, E. Inducing a direct-to-pseudodirect bandgap transition in Wurtzite GaAs nanowires with uniaxial stress. Nat. Comm. 2014, 5, 3655.
Crossref Google Scholar
[9]
Ahtapodov, L.; Todorovic, J.; Olk, P.; Mjåland, T.; Slåttnes, P.; Dheeraj, D. L.; Van Helvoort, A. T. J.; Fimland, B. O.; Weman, H. A story told by a single nanowire: Optical properties of Wurtzite GaAs. Nano Lett. 2012, 12, 6090-6095.
Crossref Google Scholar
[10]
Raya-Moreno, M.; Rurali, R.; Cartoixà, X. Thermal conductivity for III-V and II-VI semiconductor Wurtzite and zinc-blende polytypes: The role of anharmonicity and phase space. Phys. Rev. Mater. 2019, 3, 084607.
Crossref Google Scholar
[11]
Wu, S. Y.; Peng, K.; Battiato, S.; Zannier, V.; Bertoni, A.; Goldoni, G.; Xie, X.; Yang, J. N.; Xiao, S.; Qian, C. J. et al. Anisotropies of the g-factor tensor and diamagnetic coefficient in crystal-phase quantum dots in InP nanowires. Nano Res. 2019, 12, 2842-2848.
Crossref Google Scholar
[12]
Faria Junior, P. E.; Tedeschi, D.; De Luca, M.; Scharf, B.; Polimeni, A.; Fabian, J. Common nonlinear features and spin-orbit coupling effects in the Zeeman splitting of novel Wurtzite materials. Phys. Rev. B 2019, 99, 195205.
Crossref Google Scholar
[13]
Tedeschi, D.; De Luca, M.; Faria Junior, P. E.; Granados Del Águila, A.; Gao, Q.; Tan, H. H.; Scharf, B.; Christianen, P. C. M.; Jagadish, C.; Fabian, J. et al. Unusual spin properties of InP Wurtzite nanowires revealed by Zeeman splitting spectroscopy. Phys. Rev. B 2019, 99, 161204(R).
Crossref Google Scholar
[14]
Yuan, X. M.; Li, L.; Li, Z. Y.; Wang, F.; Wang, N. Y.; Fu, L.; He, J.; Tan, H. H.; Jagadish, C. Unexpected benefits of stacking faults on the electronic structure and optical emission in Wurtzite GaAs/GaInP core/shell nanowires. Nanoscale 2019, 11, 9207-9215.
Crossref Google Scholar
[15]
Zhou, C.; Zhang, X. T.; Zheng, K.; Chen, P. P.; Matsumura, S.; Lu, W.; Zou, J. Epitaxial GaAs/AlGaAs core-multishell nanowires with enhanced photoluminescence lifetime. Nanoscale 2019, 11, 6859-6865.
Crossref Google Scholar
[16]
Spies, M.; Monroy, E. Nanowire photodetectors based on Wurtzite semiconductor heterostructures. Semicond. Sci. Technol. 2019, 34, 053002.
Crossref Google Scholar
[17]
Battiato, S.; Wu, S. Y.; Zannier, V.; Bertoni, A.; Goldoni, G.; Li, A.; Xiao, S.; Han, X. D.; Beltram, F.; Sorba, L. et al. Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires. Nanotechnology 2019, 30, 194004.
Crossref Google Scholar
[18]
Göransson, D. J. O.; Borgström, M. T.; Huang, Y. Q.; Messing, M. E.; Hessman, D.; Buyanova, I. A.; Chen, W. M.; Xu, H. Q. Measurements of strain and bandgap of coherently epitaxially grown Wurtzite InAsP-InP core-shell nanowires. Nano Lett. 2019, 19, 2674-2681.
Crossref Google Scholar
[19]
Ren, Y. Z.; Leubner, P.; Verheijen, M. A.; Haverkort, J. E. M.; Bakkers, E. P. A. M. Hexagonal silicon grown from higher order silanes. Nanotechnology 2019, 30, 295602.
Crossref Google Scholar
[20]
Cartoixà, X.; Palummo, M.; Hauge, H. I. T.; Bakkers, E. P. A. M.; Rurali, R. Optical emission in hexagonal SiGe nanowires. Nano Lett. 2017, 17, 4753-4758.
Crossref Google Scholar
[21]
Dixit, S.; Shukla, A. K. Optical properties of lonsdaleite silicon nanowires: A promising material for optoelectronic applications. J. Appl. Phys. 2018, 123, 224301.
Crossref Google Scholar
[22]
Rota, M. B.; Ameruddin, A. S.; Fonseka, H. A.; Gao, Q.; Mura, F.; Polimeni, A.; Miriametro, A.; Tan, H. H.; Jagadish, C.; Capizzi, M. Bandgap energy of Wurtzite InAs nanowires. Nano Lett. 2016, 16, 5197-5203.
Crossref Google Scholar
[23]
Bao, J. M.; Bell, D. C.; Capasso, F.; Erdman, N.; Wei, D. G.; Fröberg, L.; Mårtensson, T.; Samuelson, L. Nanowire-induced Wurtzite inas thin film on zinc-blende inas substrate. Adv. Mater. 2009, 21, 3654-3658.
Crossref Google Scholar
[24]
Möller, M.; De Lima, Jr. M. M.; Cantarero, A.; Chiaramonte, T.; Cotta, M. A.; Iikawa, F. Optical emission of InAs nanowires. Nanotechnology 2012, 23, 375704.
Crossref Google Scholar
[25]
Trägårdh, J.; Persson, A. I.; Wagner, J. B.; Hessman, D.; Samuelson, L. Measurements of the band gap of Wurtzite InAs1-xPx nanowires using photocurrent spectroscopy. J. Appl. Phys. 2007, 101, 123701.
Crossref Google Scholar
[26]
De, A.; Pryor, C. E. Predicted band structures of III-V semiconductors in the Wurtzite phase. Phys. Rev. B 2010, 81, 155210.
Crossref Google Scholar
[27]
Faria Junior, P. E.; Campos, T.; Bastos, C. M. O.; Gmitra, M.; Fabian, J.; Sipahi, G. M. Realistic multiband k·p approach from ab initio and spin-orbit coupling effects of InAs and InP in Wurtzite phase. Phys. Rev. B 2016, 93, 235204.
Crossref Google Scholar
[28]
Gmitra, M.; Fabian, J. First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and Wurtzite semiconductors. Phys. Rev. B 2016, 94, 165202.
Crossref Google Scholar
[29]
Zanolli, Z.; Fuchs, F.; Furthmüller, J.; Von Barth, U.; Bechstedt, F. Model GW band structure of InAs and GaAs in the Wurtzite phase. Phys. Rev. B 2007, 75, 245121.
Crossref Google Scholar
[30]
Bechstedt, F.; Belabbes, A. Structure, energetics, and electronic states of III-V compound polytypes. J. Phys. Condens. Matter 2013, 25, 273201.
Crossref Google Scholar
[31]
Joyce, H. J.; Wong-Leung, J.; Gao, Q.; Hoe Tan, H.; Jagadish, C. Phase perfection in zinc blende and Wurtzite III-V nanowires using basic growth parameters. Nano Lett. 2010, 10, 908-915.
Crossref Google Scholar
[32]
Alexander-Webber, J. A.; Groschner, C. K.; Sagade, A. A.; Tainter, G.; Gonzalez-Zalba, M. F.; Di Pietro, R.; Wong-Leung, J.; Tan, H. H.; Jagadish, C.; Hofmann, S.; et al. Engineering the photoresponse of InAs nanowires. ACS Appl. Mater. Interfaces 2017, 9, 43993-44000.
Crossref Google Scholar
[33]
Ullah, A. R.; Joyce, H. J.; Tan, H. H.; Jagadish, C.; Micolich, A. P. The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors. Nanotechnology 2017, 28, 454001.
Crossref Google Scholar
[34]
Adachi, S. Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles; Springer: Boston, MA, USA, 1999.
Crossref
[35]
Pavesi, L.; Piazza, F.; Rudra, A.; Carlin, J. F.; Ilegems, M. Temperature dependence of the InP band gap from a photoluminescence study. Phys. Rev. B 1991, 44, 9052-9055.
Crossref Google Scholar
[36]
Geng, P. J.; Li, W. G.; Zhang, X. H.; Zhang, X. Y.; Deng, Y.; Kou, H. B. A novel theoretical model for the temperature dependence of band gap energy in semiconductors. J. Phys. D: Appl. Phys. 2017, 50, 40LT02.
Crossref Google Scholar
[37]
O’Donnell, K. P.; Chen, X. Temperature dependence of semiconductor band gaps. Appl. Phys. Lett. 1991, 58, 2924-2926.
Crossref Google Scholar
[38]
Kumar, P.; Wade, A.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J. M.; Choi, Y. J.; Park, J. G. Photocurrent spectroscopy of single CdS nanosheets: Valence band structure and two photon absorption. Appl. Phys. Lett. 2011, 98, 143102.
Crossref Google Scholar
[39]
Chuang, S. L.; Chang, C. S. k⋅p method for strained Wurtzite semiconductors. Phys. Rev. B 1996, 54, 2491-2504.
Crossref Google Scholar
[40]
Ehrenreich, H.; Seitz, F.; Turnbull, D. Solid State Physics; Academic Press: New York, USA, 1981.
[41]
Madelung, O. Semiconductors: Data Handbook, 3rd ed.; Springer: Berlin, Heidelberg, 2004.
Crossref
[42]
Sun, M. H.; Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Ning, C. Z. Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation. Nano Lett. 2012, 12, 3378-3384.
Crossref Google Scholar
[43]
Ruda, H. E.; Shik, A. Polarization-sensitive optical phenomena in semiconducting and metallic nanowires. Phys. Rev. B 2005, 72, 115308.
Crossref Google Scholar
[44]
Ruda, H. E.; Shik, A. Polarization-sensitive optical phenomena in thick semiconducting nanowires. J. Appl. Phys. 2006, 100, 024314.
Crossref Google Scholar
[45]
Jensen, B. Quantum theory of the complex dielectric constant of free carriers in polar semiconductors. IEEE J. Quantum Electron. 1982, 18, 1361-1370.
Crossref Google Scholar
[46]
De, A.; Pryor, C. E. Optical dielectric functions of Wurtzite III-V semiconductors. Phys. Rev. B 2012, 85, 125201.
Crossref Google Scholar
[47]
De Luca, M.; Zilli, A.; Fonseka, H. A.; Mokkapati, S.; Miriametro, A.; Tan, H. H.; Smith, L. M.; Jagadish, C.; Capizzi, M.; Polimeni, A. Polarized light absorption in Wurtzite InP nanowire ensembles. Nano Lett. 2015, 15, 998-1005.
Crossref Google Scholar
[48]
Kim, D. C.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. Polarization dependent photocurrent spectroscopy of single Wurtzite GaAs/AlGaAs core-shell nanowires. Appl. Phys. Lett. 2013, 102, 142107.
Crossref Google Scholar
Nano Research
Volume 13 Issue 6,
June 2020
Pages 1586-1591
DOI: 10.1007/s12274-020-2774-0
Cite this article:
Pournia S, Linser S, Jnawali G, et al. Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy. Nano Research, 2020, 13(6): 1586-1591. https://doi.org/10.1007/s12274-020-2774-0
Topics:
Arsenicc ompoundsCrystalsIIINanowiresNarrow band gap semiconductors Photocurrents Semiconductor quantum wellsV semiconductorsZinc sulfide

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Received: 12 November 2019
Revised: 04 March 2020
Accepted: 22 March 2020
Published: 14 April 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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