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Research Article

Self-organization of various "phase-separated" nanostructures in a single chemical vapor deposition

Jinmei Wang1,7,§, Dongyue Xie2,§, Zhen Li1,†( ), Xiaohang Zhang3, Xing Sun4, Amanda L. Coughlin1, Thomas Ruch1, Qiang Chen5, Yaroslav Losovyj6, Seunghun Lee3, Heshan Yu3, Haidong Zhou5, Haiyan Wang4, Jian Wang2, Shixiong Zhang1,8( )
Department of Physics, Indiana University, Bloomington, Indiana 47405, USA
Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA
Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
Department of Chemistry, Indiana University, Bloomington, Indiana 47408, USA
College of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA

§ Jinmei Wang and Dongyue Xie contributed equally to this work.

† Present address: Quantum Optoelectronics Research Team, RIKEN Center for Advanced Photonics, Saitama 351-0198, Japan

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Abstract

Chemical vapor deposition (CVD) is one of the most versatile techniques for the controlled synthesis of functional nanomaterials. When multiple precursors are induced, the CVD process often gives rise to the growth of doped or alloy compounds. In this work, we demonstrate the self-assembly of a variety of 'phase-separated’ functional nanostructures from a single CVD in the presence of various precursors. In specific, with silicon substrate and powder of Mn and SnTe as precursors, we achieved self-organized nanostructures including Si/SiOx core-shell nanowire heterostructures both with and without embedded manganese silicide particles, Mn11Si19 nanowires, and SnTe nanoplates. The Si/SiOx core-shell nanowires embedded with manganese silicide particles were grown along the <111> direction of the crystalline Si via an Au-catalyzed vapor-liquid-solid process, in which the Si and Mn vapors were supplied from the heated silicon substrates and Mn powder, respectively. In contrast, direct vapor-solid deposition led to particle-free <110>-oriented Si/SiOx core-shell nanowires and <100>-oriented Mn11Si19 nanowires, a promising thermoelectric material. No Sn or Te impurities were detected in these nanostructures down to the experimental limit. Topological crystalline insulator SnTe nanoplates with dominant {100} and {111} facets were found to be free of Mn (and Si) impurities, although nanoparticles and nanowires containing Mn were found in the vicinity of the nanoplates. While multiple-channel transport was observed in the SnTe nanoplates, it may not be related to the topological surface states due to surface oxidation. Finally, we carried out thermodynamic analysis and density functional theory calculations to understand the 'phase-separation’ phenomenon and further discuss general approaches to grow phase-pure samples when the precursors contain residual impurities.

Keywords

nanomaterials synthesissilicon nanowirestopological crystalline insulatorsphase separationchemical vapor deposition

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Nano Research
Volume 13 Issue 6,
June 2020
Pages 1723-1732
DOI: 10.1007/s12274-020-2798-5
Cite this article:
Wang J, Xie D, Li Z, et al. Self-organization of various "phase-separated" nanostructures in a single chemical vapor deposition. Nano Research, 2020, 13(6): 1723-1732. https://doi.org/10.1007/s12274-020-2798-5
Topics:
Density functional theoryIVManganeseManganese compoundsNanocrystalline materials NanowiresSelf assemblyShells (structures)SiliconSubstratesTellurium compoundsTin compoundsTopologyVI semiconductors

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Received: 06 February 2020
Revised: 27 March 2020
Accepted: 07 April 2020
Published: 02 May 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
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